摘要:
An actuator device includes: a layer provided on a single crystal silicon (Si) substrate, and made of silicon dioxide (SiO 2 ); at least one buffer layer provided on the layer made of silicon dioxide (SiO 2 ); a base layer provided on the buffer layer, and made of lanthanum nickel oxide (LNO) having the (100) plane orientation; and a piezoelectric element. The piezoelectric element includes: a lower electrode provided on the base layer, and made of platinum (Pt) having the (100) plane orientation; a piezoelectric layer made of a ferroelectric layer whose plane orientation is the (100) orientation, the piezoelectric layer formed on the lower electrode by epitaxial growth where a crystal system of at least one kind selected from a group consisting of a tetragonal system, a monoclinic system and a rhombohedral system dominates the other crystal systems; and an upper electrode provided on the piezoelectric layer.
摘要:
A liquid ejecting head includes a pressure chamber forming substrate in which a plurality of spaces to be pressure chambers in communication with nozzles are provided side by side in a nozzle column direction, in which in a region corresponding to the pressure chamber, a lower electrode film is formed with a width of 50% or more and 80% or less of a width of the pressure chamber in the nozzle column direction and the piezoelectric body layer covers the lower electrode film in the nozzle column direction and is formed with a width of 90% or less of the width of the pressure chamber.
摘要:
A liquid ejecting head includes a pressure chamber forming substrate in which a plurality of spaces to be pressure chambers in communication with nozzles are provided side by side in a nozzle column direction, in which in a region corresponding to the pressure chamber, a lower electrode film is formed with a width of 50% or more and 80% or less of a width of the pressure chamber in the nozzle column direction and the piezoelectric body layer covers the lower electrode film in the nozzle column direction and is formed with a width of 90% or less of the width of the pressure chamber.
摘要:
A liquid ejection head includes a substrate in which a pressure generating chamber that communicates with a nozzle opening is formed; and a piezoelectric element having a piezoelectric layer, a first electrode that is formed on a surface of the piezoelectric layer on a side of the substrate so as to correspond to the pressure generating chamber, and a second electrode that is formed on a surface of the piezoelectric layer opposite to the side on which the first electrode is formed so as to extend over a plurality of the pressure generating chambers, wherein the second electrode is formed to extend to an outside of the pressure generating chamber in a longitudinal direction of the pressure generating chamber.
摘要:
A piezoelectric device including: a substrate (2); a lower electrode (4) formed over the substrate; a piezoelectric layer (6) formed over the lower electrode and including lead zirconate titanate; and an upper electrode (7) formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.
摘要:
A piezoelectric device including: a substrate (2); a lower electrode (4) formed over the substrate; a piezoelectric layer (6) formed over the lower electrode and including lead zirconate titanate; and an upper electrode (7) formed over the piezoelectric layer, the lead zirconate titanate having a half-width of a peak of a (100) plane measured by an X-ray diffraction rocking curve method of 10 degrees or more and 25 degrees or less.
摘要:
A liquid ejection head includes a substrate in which a pressure generating chamber that communicates with a nozzle opening is formed; and a piezoelectric element having a piezoelectric layer, a first electrode that is formed on a surface of the piezoelectric layer on a side of the substrate so as to correspond to the pressure generating chamber, and a second electrode that is formed on a surface of the piezoelectric layer opposite to the side on which the first electrode is formed so as to extend over a plurality of the pressure generating chambers, wherein the second electrode is formed to extend to an outside of the pressure generating chamber in a longitudinal direction of the pressure generating chamber.
摘要:
A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film (70) containing at least a lead component to form a dielectric precursor film (71); a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140°C to 170°C, the degreasing step is performed at a degreasing temperature of 350°C to 450°C and at a heating-up rate of 15 [°C/sec] or higher, and the sintering step is performed at a heating-up rate of 100 [°C/sec] to 150 [°C/sec].