公开(公告)号：EP4368752A1

公开(公告)日：2024-05-15

申请号：EP23206580.5

申请日：2023-10-30

申请人： Semiconductor Components Industries, LLC

发明人： JESKO, Radek ,  VALEK, Lukas ,  TESIK, Jan

IPC分类号： C30B23/02 ,  C30B23/06 ,  C30B29/36

CPC分类号： C30B29/36 ,  C30B23/02 ,  C30B23/066

摘要： A crucible for manufacturing semiconductor crystals may be disposed adjacent to a heating element. The crucible may include a first seed crystal site and a second seed crystal site at opposed ends of the crucible. A compartment may be defined between an outer wall and an inner wall of the crucible, where the inner wall is formed with a porous graphite membrane. Source powder loaded into the compartment may then be heated by the heating element to sublimate and diffuse from the compartment and through the inner wall to provide crystal growth of a first seed crystal at the first seed crystal site and of a second seed crystal at the second seed crystal site.