-
公开(公告)号：EP3353338A1
公开(公告)日：2018-08-01
申请号：EP16759760.8
申请日：2016-08-31
CPC分类号： C30B29/403 , C30B23/005 , C30B23/066 , H01L21/02389 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L29/778 , H01L33/0025 , H01L33/0075 , H01L33/06 , H01L33/32 , H01S5/0206 , H01S5/343
摘要： The invention relates to a method for generating single-crystalline aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents of between 0.01 and 50 at.% with respect to 100 at.% of the total amount of substance of the doped aluminium nitride, characterized in that, in a crucible, in the presence of a gas selected from nitrogen or noble gas or a mixture of nitrogen and noble gas, a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material of aluminium nitride are sublimated and recondensed on a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium. The invention likewise relates to a corresponding device, and the corresponding single-crystalline products and the use thereof, creating the basis for novel components based on layers or stacks of layers of aluminium gallium nitride, indium aluminium nitride or indium aluminium gallium nitride.
-
2.发明授权
公开(公告)号：EP2682503B1
公开(公告)日：2016-12-14
申请号：EP13305947.7
申请日：2013-07-03
申请人： Riber
CPC分类号： C23C14/243 , C23C14/12 , C23C14/26 , C30B23/066 , C30B29/54 , H01L51/001
-
3.发明公开METHODS OF PRODUCING LARGE GRAIN OR SINGLE CRYSTAL FILMS 审中-公开VERFAHREN ZUR HERSTELLUNG VONGROSSKÖRNIGENODER EINKRISTALLINSCHICHTEN
公开(公告)号：EP3047054A2
公开(公告)日：2016-07-27
申请号：EP14850433.5
申请日：2014-08-05
IPC分类号： C30B23/06
CPC分类号： C30B23/066 , C23C14/081 , C23C14/30 , C23C14/52 , C23C14/541 , C30B29/16
摘要： Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.
摘要翻译： 通过电子束蒸发在普通钠钙玻璃上沉积高度纹理的[111]取向膜如MgO结晶膜。 诸如硅的半导体膜可以在低于普通玻璃的软化点的温度下使用共晶体沉积在这些MgO膜上并且具有非常高的织构和强度[111]取向。 本发明可用于高效且具有成本效益的太阳能电池，显示器等
-
公开(公告)号：EP2290120B1
公开(公告)日：2015-10-28
申请号：EP10015785.8
申请日：2008-07-21
CPC分类号： C23C14/243 , C23C14/26 , C23C14/30 , C30B23/066
-
公开(公告)号：EP2754737A4
公开(公告)日：2015-07-29
申请号：EP12829861
申请日：2012-03-09
IPC分类号： C30B29/16 , B01D53/02 , B01D53/04 , B01J20/04 , B01J21/10 , C01B32/50 , C23C14/08 , C23C14/28 , C30B23/06
CPC分类号： C30B23/066 , B01D53/02 , B01D2253/1124 , B01D2253/25 , B01D2257/504 , B01J20/041 , B01J20/3204 , B01J20/3236 , C30B23/025 , C30B29/16 , Y02C10/08
摘要： A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.
摘要翻译： 通过使用氧化镁的烧结体或单晶作为靶的激光磨损法在基板上沉积氧化镁薄膜的方法。 在该方法中，使用具有（111）面作为其主表面的钛酸锶基体或氧化钇稳定的氧化锆由（111）面作为其前表面的氧化镁制成的平面加工膜，其具有（ 111）面作为其主表面，通过在衬底的主表面上直接沉积膜并外延生长膜。
-
6.发明公开SUBSTRATE FOR EPITAXIAL GROWTH, AND CRYSTAL LAMINATE STRUCTURE 审中-公开KRISTALLLAMINATSTRUKTUR的基地FÜREPITAKTISCHES WACHSTUM
公开(公告)号：EP2754738A4
公开(公告)日：2015-02-25
申请号：EP12830660
申请日：2012-08-06
申请人： TAMURA SEISAKUSHO KK
发明人： SASAKI KOHEI
CPC分类号： H01L29/24 , C30B13/00 , C30B15/34 , C30B23/066 , C30B29/16 , C30B29/22 , C30B29/68 , H01L21/02414 , H01L21/02433 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L29/04 , H01L29/045
摘要： Provided is a substrate for epitaxial growth, which enables the improvement in quality of a Ga-containing oxide layer that is formed on a ²-Ga 2 O 3 single-crystal substrate. A substrate (1) for epitaxial growth comprises ²-Ga 2 O 3 single crystals, wherein face (010) of the single crystals or a face that is inclined at an angle equal to or smaller than 37.5° with respect to the face (010) is the major face. A crystal laminate structure (2) comprises: the substrate (1) for epitaxial growth; and epitaxial crystals (20) which are formed on the major face (10) of the substrate (1) for epitaxial growth and each of which comprises a Ga-containing oxide.
摘要翻译： 提供了一种用于外延生长的衬底，其能够提高形成在2-Ga 2 O 3单晶衬底上的含Ga氧化物层的质量。 用于外延生长的衬底（1）包括2-Ga 2 O 3单晶，其中单晶的面（010）或相对于面（010）以等于或小于37.5°的角度倾斜的面 ）是主要的面孔。 晶体层压结构（2）包括：用于外延生长的衬底（1）; 和外延晶体（20），其形成在用于外延生长的基板（1）的主面（10）上，并且每个包括含Ga氧化物。
-
7.发明公开
公开(公告)号：EP2761642A2
公开(公告)日：2014-08-06
申请号：EP12770084.7
申请日：2012-09-27
IPC分类号： H01J37/08 , H01J37/317 , H01J27/02 , C23C14/32 , C23C16/452
CPC分类号： H01L21/0262 , C23C14/0617 , C23C14/32 , C30B23/066 , C30B29/403 , F27B14/10 , F27B2014/104 , H01J27/022 , H01J27/04 , H01J37/08 , H01J37/3178 , H01L21/02444 , Y10T428/31504
摘要： PVD and HPHT methods and apparatus for producing materials, for example nitrides, are disclosed.
摘要翻译： PVD和HPHT方法和用于生产的材料的装置，对于实施例的氮化物，是游离缺失盘。
-
公开(公告)号：EP2754737A1
公开(公告)日：2014-07-16
申请号：EP12829861.9
申请日：2012-03-09
CPC分类号： C30B23/066 , B01D53/02 , B01D2253/1124 , B01D2253/25 , B01D2257/504 , B01J20/041 , B01J20/3204 , B01J20/3236 , C30B23/025 , C30B29/16 , Y02C10/08
摘要： A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.
摘要翻译： 一种使用氧化镁的烧结体或单晶作为靶通过激光磨蚀法在衬底上沉积氧化镁薄膜的方法。 在该方法中，使用由以（111）面为主面的钛酸锶构成的基板或以（111）面为主面的氧化钇稳定化氧化锆作为基材，制作以（111）面为正面的氧化镁的平坦加工膜 111）平面作为其主表面，通过在基板的主表面上直接沉积膜并外延生长该膜。
-
公开(公告)号：EP2130941B1
公开(公告)日：2013-07-24
申请号：EP09161633.4
申请日：2009-06-02
申请人： DCA Instruments Oy
发明人： Vanhatalo, Jari
CPC分类号： C23C14/243 , C30B23/005 , C30B23/066 , Y10T117/10
-
10.发明公开Semiconductor heterostructures having reduced dislocation pile-ups and related methods 审中-公开半导体异质结构与位错和制备适当的方法的积累降低
公开(公告)号：EP2267762A3
公开(公告)日：2012-08-22
申请号：EP10183272.3
申请日：2003-08-22
IPC分类号： H01L21/20 , H01L21/02 , C30B25/02 , C30B29/52 , H01L21/8238
CPC分类号： H01L21/0251 , C30B23/025 , C30B23/066 , C30B25/02 , C30B25/183 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L21/823807
摘要： Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.
-
-
-
-
-
-
-
-
-
搜索结果
161 条记录 (耗时 0.022 秒)
