摘要:
The present invention provides a non-aromatic saturated hydrocarbon group-containing organopolysiloxane containing the following units (I) to (III): (I) a siloxane unit (T unit) represented by R 1 SiO 3/2 : 40 to 99mol%; (II) a siloxane unit (D unit) represented by R 2 R 3 SiO 2/2 : 59mol% or less; and (III) a siloxane unit (M unit) represented by R 4 R 5 R 6 SiO 1/2 : 1 to 30mol%. There can be an organopolysiloxane, which is soluble in a nonpolar organic solvent so that the organopolysiloxane can be peeled in a short time, and which is hardly soluble in a polar organic solvent to be exemplarily used upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom so that the organopolysiloxane is not peeled from the supporting substrate upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom.
摘要翻译:本发明提供了一个非芳族饱和烃基的有机聚硅氧烷含有下列单元(I)至(III):(I)的硅氧烷单元(T单元)中的R 1的SiO 3/2表示:40〜99摩尔%; (II)的硅氧烷单元(D单元)中的R 2 R 3的SiO 2/2表示:59mol%或更少; 和(III)中的R 4 R 5 R 6的SiO 1/2表示的硅氧烷单元(M单元):1〜30摩尔%。 可存在于有机聚硅氧烷的所有可溶于所以也有机聚硅氧烷可以在很短的时间被剥离的非极性有机溶剂,并且所有这一切是难溶于极性有机溶剂中,以在涂覆光致抗蚀剂走上的一个半导体一侧示例性地使用 接合的基板,并从那里去除光刻胶所以做了有机聚硅氧烷没有从支承基板在涂覆光致抗蚀剂到接合的基板的半导体侧,并从那里去除光刻胶剥离。
摘要:
The present invention provides a non-aromatic saturated hydrocarbon group-containing organopolysiloxane containing the following units (I) to (III): (I) a siloxane unit (T unit) represented by R 1 SiO 3/2 : 40 to 99mol%; (II) a siloxane unit (D unit) represented by R 2 R 3 SiO 2/2 : 59mol% or less; and (III) a siloxane unit (M unit) represented by R 4 R 5 R 6 SiO 1/2 : 1 to 30mol%. There can be an organopolysiloxane, which is soluble in a nonpolar organic solvent so that the organopolysiloxane can be peeled in a short time, and which is hardly soluble in a polar organic solvent to be exemplarily used upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom so that the organopolysiloxane is not peeled from the supporting substrate upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom.
摘要翻译:本发明提供了一个非芳族饱和烃基的有机聚硅氧烷含有下列单元(I)至(III):(I)的硅氧烷单元(T单元)中的R 1的SiO 3/2表示:40〜99摩尔%; (II)的硅氧烷单元(D单元)中的R 2 R 3的SiO 2/2表示:59mol%或更少; 和(III)中的R 4 R 5 R 6的SiO 1/2表示的硅氧烷单元(M单元):1〜30摩尔%。 可存在于有机聚硅氧烷的所有可溶于所以也有机聚硅氧烷可以在很短的时间被剥离的非极性有机溶剂,并且所有这一切是难溶于极性有机溶剂中,以在涂覆光致抗蚀剂走上的一个半导体一侧示例性地使用 接合的基板,并从那里去除光刻胶所以做了有机聚硅氧烷没有从支承基板在涂覆光致抗蚀剂到接合的基板的半导体侧,并从那里去除光刻胶剥离。