公开(公告)号：EP2398041B1

公开(公告)日：2018-10-31

申请号：EP10008732.9

申请日：2010-08-20

申请人： Brewer Science Inc.

发明人： McCutcheon, Jeremy W. ,  Brown, Robert D.

IPC分类号： H01L21/00 ,  H01L21/687 ,  H01L21/68 ,  H01L21/18 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/187 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/68721 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1168 ,  Y10T156/1978 ,  Y10T156/1989

摘要： New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The methods comprise demounting a device wafer from a carrier wafer or substrate that have only been strongly bonded at their outer perimeters. The edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided.

公开(公告)号：EP2382656B1

公开(公告)日：2018-10-03

申请号：EP09795451.5

申请日：2009-12-23

申请人： Nissan Chemical Corporation

发明人： RICHTER, Franz

IPC分类号： H01L21/68

CPC分类号： H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68386 ,  H01L2221/6839

公开(公告)号：EP3315301A1

公开(公告)日：2018-05-02

申请号：EP17195687.3

申请日：2017-10-10

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： YASUDA, Hiroyuki ,  SUGO, Michihiro ,  KATO, Hideto

IPC分类号： B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B17/06 ,  B32B27/08 ,  B32B27/18 ,  B32B27/20 ,  B32B27/24 ,  B32B27/26 ,  B32B27/28 ,  B32B37/02 ,  B32B37/12 ,  B32B38/10

CPC分类号： H01L24/04 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B17/064 ,  B32B27/08 ,  B32B27/18 ,  B32B27/20 ,  B32B27/24 ,  B32B27/26 ,  B32B27/28 ,  B32B27/283 ,  B32B37/02 ,  B32B37/12 ,  B32B38/10 ,  B32B2037/0092 ,  B32B2037/1253 ,  B32B2037/1269 ,  B32B2038/0016 ,  B32B2250/03 ,  B32B2250/04 ,  B32B2250/05 ,  B32B2270/00 ,  B32B2307/40 ,  B32B2307/412 ,  B32B2307/414 ,  B32B2457/00 ,  B32B2457/08 ,  B32B2457/12 ,  B32B2457/14 ,  C08G77/50 ,  C08G77/52 ,  C08G77/70 ,  C08G77/80 ,  C09J163/00 ,  C09J183/10 ,  H01L21/6836 ,  H01L2221/68381 ,  H01L2221/68386

摘要： Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers.
The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.

摘要翻译： 本文公开了一种适用于生产薄晶片的晶片层压板以及一种用于制造晶片层压板的方法。 晶片叠层可以通过在支撑件和晶片之间进行粘合而容易地形成，并且它可以容易地彼此分离。 它促进了薄晶圆的生产力。 晶片层压体包括载体，在载体上形成的粘合剂层以及以这样的方式层叠在粘合剂层上的晶片，即晶片的具有电路表面的表面面向粘合剂层，其中粘合剂层 是由树脂A和树脂B构成的粘合剂组合物，具有遮光效果的树脂A和具有硅氧烷骨架的树脂B的固化物。

公开(公告)号：EP3163607A1

公开(公告)日：2017-05-03

申请号：EP15812648

申请日：2015-06-22

申请人： TOPPAN PRINTING CO LTD

发明人： KOBAYASHI AKANE ,  AKUTAGAWA YOSHITO

IPC分类号： H01L23/12 ,  C09J201/00 ,  H05K3/00

CPC分类号： H01L23/49838 ,  C09J7/0264 ,  C09J7/22 ,  C09J201/00 ,  C09J2203/326 ,  H01L21/4853 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/12 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/49894 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/96 ,  H01L2221/68331 ,  H01L2221/68359 ,  H01L2221/68386 ,  H01L2224/1146 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13644 ,  H01L2224/16104 ,  H01L2224/16227 ,  H01L2224/16501 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29387 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81395 ,  H01L2224/81411 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/83005 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/92 ,  H01L2224/9211 ,  H01L2224/92125 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19105 ,  H01L2924/3511 ,  H05K3/00 ,  H01L2924/00012 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/01322 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2221/68304 ,  H01L21/56 ,  H01L2221/68381

摘要： A wiring substrate 11 used for improvement in manufacturing efficiency of a semiconductor device includes a support body 12 having transparency; an adhesive layer 13 disposed on a main surface 12a of the support body 12, the adhesive layer 13 including a peeling layer 41 which contains a third resin which is decomposed by light irradiation and a protective layer 42 which is disposed on the peeling layer 41 and contains a fourth resin; and a laminate 21 disposed on the adhesive layer 13, the laminate 21 including a first resin layer 14, a second resin layer 19 disposed on the first resin layer 14, and a wiring pattern 18 disposed at least between the first resin layer 14 and the second resin layer 19. Accordingly, the semiconductor chip 22 and the wiring substrate 11 which is the external connection member can be separately manufactured, thereby improving manufacturing efficiency of the semiconductor device 1.

摘要翻译： 用于提高半导体器件制造效率的布线基板11包括具有透明性的支撑体12; 设置在支撑体12的主表面12a上的粘合层13，粘合层13包括剥离层41和保护层42，剥离层41包含通过光照射而分解的第三树脂，保护层42设置在剥离层41上并且 含有第四树脂; 以及设置在粘合层13上的层压体21，层压体21包括第一树脂层14，设置在第一树脂层14上的第二树脂层19和布置在第一树脂层14和 第二树脂层19.因此，半导体芯片22和作为外部连接部件的布线基板11可以分开制造，由此提高了半导体器件1的制造效率。

公开(公告)号：EP3159924A1

公开(公告)日：2017-04-26

申请号：EP16002215.8

申请日：2016-10-14

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： TAGAMI, Shohei ,  SUGO, Michihiro ,  YASUDA, Hiroyuki ,  TANABE, Masahito

IPC分类号： H01L21/683

CPC分类号： H01L21/6836 ,  B32B7/06 ,  B32B7/12 ,  B32B27/283 ,  C08G77/04 ,  C08G77/06 ,  C09J5/06 ,  C09J7/22 ,  C09J7/35 ,  C09J183/04 ,  C09J2201/36 ,  C09J2203/326 ,  C09J2205/302 ,  H01L21/304 ,  H01L21/6835 ,  H01L24/14 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/13147 ,  H01L2924/01029

摘要： The present invention is a wafer processing laminate including a support (3), a temporary adhesive material layer (2) formed on the support, and a wafer (1) stacked on the temporary adhesive material layer, the wafer having a front surface on which a circuit is formed and a back surface to be processed, wherein the temporary adhesive material layer comprises a three-layered complex temporary adhesive material layer that includes a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a thickness of less than 100 nm and releasably laminated to the front surface of the wafer, a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B) releasably laminated to the first temporary adhesive layer, and a third temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A') having a thickness of less than 100 nm, releasably laminated to the second temporary adhesive layer, and releasably laminated to the support. This wafer processing laminate can withstand a thermal process at a high temperature exceeding 300°C, and can increase productivity of thin wafers.

摘要翻译： 本发明是一个晶片处理层压材料包括：（3），一个临时粘合材料层（2）在载体上形成的支撑件，和一个晶片（1）堆叠在临时粘结材料层上，具有在其上的前表面的晶片 的电路形成，并且待处理的背表面，worin临时粘合剂材料层包括三层复合临时粘接材料层做包括具有厚度的更小的热塑性的有机聚硅氧烷聚合物层（A）构成的第一临时粘合剂层 大于100nm和自由剥离地层积到热塑性构成的晶片，剥离地层积于所述第一临时粘合剂层的热固性硅氧烷改性的聚合物层（B）构成的第二临时粘合剂层，以及第三临时粘合剂层的前表面 有机聚硅氧烷聚合物层（A“）的厚度为小于100纳米，自由剥离地层积于第二临时粘合剂层，和RELE asably层压到载体上。 此晶片处理层压板可在高温下超过300℃经受热过程，并能增加薄晶片的生产率。

公开(公告)号：EP3007211A1

公开(公告)日：2016-04-13

申请号：EP14803829.2

申请日：2014-05-22

申请人： Mitsui Chemicals Tohcello, Inc.

发明人： USUGI Shinichi ,  IGARASHI Kouji ,  MORIMOTO Akimitsu

IPC分类号： H01L21/304

CPC分类号： H01L21/6835 ,  B32B43/006 ,  C09J5/00 ,  C09J2203/326 ,  C09J2205/302 ,  C09J2205/31 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386

摘要： Provided is a method of peeling an electronic member (16) from a laminate (10) composed of the electronic member (16) adhered to a supporting substrate (12) via an adhesive film (14), the adhesive film (14) having a self-peeling adhesive layer (17) on a surface located on the side of the supporting substrate (12) and an exposed region A in at least one part of a surface (14a) which is located on the side of the electronic member (16). The method includes: a step of reducing adhesive strength between the supporting substrate (12) and the self-peeling adhesive layer (17) in the region A by applying energy on the region A; a step of removing the supporting substrate (a) from the laminate by further applying energy on the region and thus further reducing the adhesive strength reduced in the prior step between the supporting substrate (a) and the self-peeling adhesive layer from a starting point of the interface between the supporting substrate (a) and the self-peeling adhesive layer; and a step of peeling the electronic member (16) from the laminate by removing the adhesive film (14) from the electronic member (16).

摘要翻译： 本发明提供一种从经由粘接膜（14）粘接于支撑基板（12）的电子部件（16）构成的层叠体（10）上剥离电子部件（16）的方法，该粘接膜（14） 在位于支撑基板（12）一侧的表面上的自剥离粘合剂层（17）和位于电子部件（16）侧的表面（14a）的至少一部分中的暴露区域A ）。 该方法包括：通过在区域A上施加能量来降低区域A中的支撑基板（12）和自剥离粘合剂层（17）之间的粘合强度的步骤; 通过在该区域上进一步施加能量而从层压体去除支撑基材（a）的步骤，并且因此进一步降低在支撑基材（a）和自剥离粘合剂层之间的先前步骤中从开始点降低的粘合强度 支撑基板（a）和自剥离粘合剂层之间的界面; 以及通过从电子部件（16）去除粘合膜（14）而从层压体上剥离电子部件（16）的步骤。

公开(公告)号：EP2475002B1

公开(公告)日：2014-07-30

申请号：EP12000122.7

申请日：2012-01-10

申请人： SHIN-ETSU CHEMICAL CO., LTD

发明人： Furuya, Masahiro ,  Tagami, Shohei ,  Kato, Hideto ,  Ito, Hideyuki ,  Yoshizawa, Masahiro

IPC分类号： H01L21/683 ,  C09J183/04

CPC分类号： C09J183/04 ,  C08G77/12 ,  C08G77/20 ,  C08G77/50 ,  C08G77/80 ,  C08L83/00 ,  C09J183/14 ,  H01L21/02013 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2221/68386

摘要： A temporary adhesive for which temporary adhesion and subsequent detachment are simple. The temporary adhesive composition includes: (A) an organopolysiloxane having a weight-average molecular weight of at least 15,000, obtained by a hydrosilylation reaction between (A1) and (A2) described below, and (B) an organic solvent having a boiling point of not more than 220°C, wherein (A1) is an alkenyl group-containing organopolysiloxane having a weight-average molecular weight exceeding 2,000, comprising 35 to 99 mol% ofT siloxane units and 1 to 25 mol% of M siloxane units, and in which alkenyl groups bonded to silicon atoms represent at least 2 mol% of all the organic groups bonded to silicon atoms, and (A2) is a specific organohydrogenpolysiloxane having at least two silicon atom-bonded hydrogen atoms or a specific hydrosilyl group-containing compound.

公开(公告)号：EP2624286A1

公开(公告)日：2013-08-07

申请号：EP10857866.7

申请日：2010-09-30

申请人： Fuji Electric Co. Ltd.

发明人： NAKAJIMA, Tsunehiro ,  NAKAZAWA, Haruo

IPC分类号： H01L21/336 ,  H01L21/02 ,  H01L29/739 ,  H01L29/78

CPC分类号： H01L22/12 ,  G03F9/7084 ,  G03F9/7088 ,  H01L21/266 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/66333 ,  H01L29/7395 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68368 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A circuit pattern of a front surface structure (2) is formed in a front surface of a semiconductor wafer (1) and an alignment mark (3) is formed on the front surface of a semiconductor wafer (1). Then, a transparent supporting substrate (12) is attached to the front surface of the semiconductor wafer (1) by a transparent adhesive (11). Then, a resist (13) is applied onto a rear surface of the semiconductor wafer (1). Then, the semiconductor wafer (1) is mounted on a stage (21) of an exposure apparatus, with the supporting substrate (12) down. Then, the alignment mark (3) formed on the front surface of the semiconductor wafer (1) is recognized by a camera (22) which is provided below the stage (21) through the supporting substrate (12) and the adhesive (11) from the lower side of the stage (21) and the positions of the semiconductor wafer (1) and a photomask (24) are aligned with each other. Then, the resist (13) is patterned. Then, a circuit pattern of a rear surface structure is formed in the rear surface of the semiconductor wafer (1) using the resist (13) as a mask.

摘要翻译： 在半导体晶片（1）的前表面中形成前表面结构（2）的电路图案，并且在半导体晶片（1）的前表面上形成对准标记（3）。 然后，通过透明粘合剂（11）将透明支撑衬底（12）附着到半导体晶片（1）的前表面。 然后，在半导体晶片（1）的后表面上涂敷抗蚀剂（13）。 然后，半导体晶片（1）在支撑基板（12）下降的状态下被安装在曝光装置的载物台（21）上。 然后，形成在半导体晶片（1）的前表面上的对准标记（3）通过支撑基板（12）和粘合剂（11）被设置在台（21）下方的照相机（22） 从台（21）的下侧和半导体晶片（1）和光掩模（24）的位置彼此对准。 然后，抗蚀剂（13）被图案化。 然后，使用抗蚀剂（13）作为掩模，在半导体晶片（1）的后表面中形成背面结构的电路图案。

公开(公告)号：EP2615124A1

公开(公告)日：2013-07-17

申请号：EP13001828.6

申请日：2012-04-23

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： Masahiro, Furuya ,  Hiroyuki, Yasuda ,  Shohei, Tagami ,  Michihiro, Sugo ,  Hideto, Kato

IPC分类号： C08G77/04 ,  C08G77/50 ,  C08L83/04 ,  C09J183/04 ,  H01L21/312 ,  C08L83/07

CPC分类号： C08G77/70 ,  C08G77/04 ,  C08G77/50 ,  C08L83/04 ,  C09J183/04 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

摘要： The present invention provides a non-aromatic saturated hydrocarbon group-containing organopolysiloxane containing the following units (I) to (III):
(I) a siloxane unit (T unit) represented by R 1 SiO 3/2 : 40 to 99mol%;
(II) a siloxane unit (D unit) represented by R 2 R 3 SiO 2/2 : 59mol% or less; and
(III) a siloxane unit (M unit) represented by R 4 R 5 R 6 SiO 1/2 : 1 to 30mol%.
There can be an organopolysiloxane, which is soluble in a nonpolar organic solvent so that the organopolysiloxane can be peeled in a short time, and which is hardly soluble in a polar organic solvent to be exemplarily used upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom so that the organopolysiloxane is not peeled from the supporting substrate upon coating a photoresist onto a semiconductor side of a joined substrate and removing the photoresist therefrom.

摘要翻译： 本发明提供了一个非芳族饱和烃基的有机聚硅氧烷含有下列单元（I）至（III）：（I）的硅氧烷单元（T单元）中的R 1的SiO 3/2表示：40〜99摩尔％; （II）的硅氧烷单元（D单元）中的R 2 R 3的SiO 2/2表示：59mol％或更少; 和（III）中的R 4 R 5 R 6的SiO 1/2表示的硅氧烷单元（M单元）：1〜30摩尔％。 可存在于有机聚硅氧烷的所有可溶于所以也有机聚硅氧烷可以在很短的时间被剥离的非极性有机溶剂，并且所有这一切是难溶于极性有机溶剂中，以在涂覆光致抗蚀剂走上的一个半导体一侧示例性地使用 接合的基板，并从那里去除光刻胶所以做了有机聚硅氧烷没有从支承基板在涂覆光致抗蚀剂到接合的基板的半导体侧，并从那里去除光刻胶剥离。

公开(公告)号：EP2553719A1

公开(公告)日：2013-02-06

申请号：EP10715497.3

申请日：2010-03-31

申请人： Ev Group E. Thallner GmbH

发明人： BURGGRAF, Jürgen ,  WIMPLINGER, Markus ,  WIESBAUER, Harald

IPC分类号： H01L21/68

CPC分类号： H01L21/6835 ,  H01L21/486 ,  H01L21/561 ,  H01L23/5384 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68318 ,  H01L2221/68331 ,  H01L2221/68372 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2221/6839 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01052 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2224/81001 ,  H01L2224/81 ,  H01L2924/00

摘要： The present invention relates to a method for producing a product wafer (1) equipped with chips (12, 15) on two sides, in particular, comprising the following sequence: - processing a first side (3) of the product wafer - bonding the product wafer by the first side thereof on a first, rigid carrier wafer (8) with a first intermediate layer (18) consisting of a first adhesion layer (6) applied at least marginally - processing a second side of the product wafer, said second side lying opposite the first side, and - bonding the product wafer by the second side thereof on a second, rigid carrier wafer (13) with a second intermediate layer (17) consisting of a second adhesion layer (14) applied at least marginally, wherein the first intermediate layer and the second intermediate layer are embodied differently such that the first carrier wafer (8) can be separated from the product wafer selectively before the second carrier wafer (13).