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1.发明公开
公开(公告)号：EP1043764A1
公开(公告)日：2000-10-11
申请号：EP99952799.7
申请日：1999-10-28
CPC分类号： C23C16/45561 , C23C16/455 , C30B25/14 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/2205 , Y10T29/41
摘要： It is an object of the invention to provide a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity on a main surface of a semiconductor single crystal substrate of 300 mm or more in diameter.
When a process gas is supplied to over a main surface of a silicon single crystal substrate 12 in rotation in almost parallel to the main surface thereof in one direction in a reaction chamber 10 through six inlet ports 18a to 18f disposed in width direction of the reaction chamber 10, H 2 gas, a semiconductor raw material gas and a dopant gas are supplied onto an area in the vicinity of the center of the main surface of the silicon single crystal substrate 12 and an intermediate area thereof through the inner inlet ports 18a and 18b and the middle inlet ports 18c and 18d, and only H 2 gas and the semiconductor raw material gas without the dopant gas are supplied onto an area in the vicinity of the outer periphery thereof from the outer inlet ports 18e and 18f.
In such arrangement, a dopant gas produced by the auto-doping phenomenon is supplied onto the area in the vicinity of the outer periphery of the main surface of the silicon single crystal substrate 12. For this reason, the dopant gases from both sources are combined, thereby a concentration of the dopant gas supplied over all the main surface of the silicon single crystal substrate12 is almost uniform.摘要翻译： 本发明的目的是提供一种通过在直径为300mm以上的半导体单晶衬底的主表面上形成具有均匀电阻率的半导体薄膜而获得的半导体晶片。 当在反应室10中通过在反应的宽度方向上设置的六个入口18a至18f将工艺气体在一个方向上以大致平行于其主表面的方式大致平行于硅单晶衬底12的主表面供应到超过主单面 室10，H2气体，半导体原料气体和掺杂剂气体通过内部入口18a和18b供应到硅单晶衬底12的主表面的中心附近的区域及其中间区域 中间入口18c和18d，只有H2气体和没有掺杂剂气体的半导体原料气体从外部入口18e和18f供应到其外周附近的区域上。 在这种布置中，通过自动掺杂现象产生的掺杂剂气体被供应到硅单晶衬底12的主表面的外周附近的区域。为此，来自两个源的掺杂剂气体被组合 从而在硅单晶衬底12的全部主表面上供给的掺杂剂气体的浓度几乎均匀。
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