公开(公告)号：EP4242706A1

公开(公告)日：2023-09-13

申请号：EP21889418.6

申请日：2021-10-15

申请人： Pusan National University Industry-University Cooperation Foundation

发明人： JEONG, Se Young ,  KIM, Su Jae ,  LEE, You Sil

IPC分类号： G02B5/08 ,  G02B1/02 ,  C30B23/08 ,  C30B29/02 ,  C30B29/20

摘要： The present invention relates to a large-area single-crystal silver thin-film structure using a single-crystal copper thin-film buffer layer, and a method for manufacturing same, the large-area single-crystal silver thin-film structure comprising: a transparent substrate (10); a single-crystal copper thin-film buffer layer (20) formed by deposition on the transparent substrate; and a single-crystal silver thin-film layer (30) deposited on the single-crystal copper thin-film buffer layer (20) and having a certain directionality. The technical gist of the present invention is manufacturing through: a single-crystal copper thin-film buffer layer forming step (S100) in which a single-crystal copper thin film is deposited on a transparent substrate (10) by using a single-crystal copper ingot target to form a buffer layer; and a single-crystal silver thin-film layer forming step (S20) in which a single-crystal silver thin-film layer (30) is deposited on the single-crystal copper thin-film buffer layer (20) by using a single-crystal silver ingot target.

公开(公告)号：EP3788645A1

公开(公告)日：2021-03-10

申请号：EP19722833.1

申请日：2019-04-30

申请人： Centre national de la recherche scientifique

发明人： HARMAND, Jean-Christophe ,  TRAVERS, Laurent ,  OLLIVIER, Yannick

IPC分类号： H01J37/26 ,  H01J37/317 ,  C30B23/08 ,  H01L21/203

公开(公告)号：EP2276061A4

公开(公告)日：2013-10-16

申请号：EP09735517

申请日：2009-04-17

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： SATOH ISSEI ,  MIYANAGA MICHIMASA ,  FUJIWARA SHINSUKE ,  NAKAHATA HIDEAKI

IPC分类号： C30B29/38 ,  C23C4/18 ,  C23C14/06 ,  C23C14/28 ,  C23C16/34 ,  C30B23/02 ,  C30B23/08 ,  C30B25/02 ,  C30B29/36 ,  C30B29/40 ,  H01L21/02

CPC分类号： C30B29/36 ,  C23C4/185 ,  C23C16/34 ,  C30B23/02 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631

公开(公告)号：EP2302110A1

公开(公告)日：2011-03-30

申请号：EP09735559.8

申请日：2009-04-17

申请人： Sumitomo Electric Industries, Ltd.

发明人： SATOH, Issei ,  MIYANAGA, Michimasa ,  FUJIWARA, Shinsuke ,  NAKAHATA, Hideaki

IPC分类号： C30B29/38 ,  C23C14/06 ,  C30B23/08

CPC分类号： C30B23/00 ,  C23C14/0617 ,  C23C14/28 ,  C30B25/00 ,  C30B25/02 ,  C30B28/12 ,  C30B28/14 ,  C30B29/36 ,  C30B29/38 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02617 ,  Y10T428/24471

摘要： There are provided a method for manufacturing a Si (1-v-w-x) C w Al x N v substrate having a reduced number of cracks and high processibility, a method for manufacturing an epitaxial wafer, a Si (1-v-w-x) C w Al x N v substrate, and an epitaxial wafer.
A method for manufacturing a Si (1-v-w-x) C w Al x N v substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si (1-v-w-x) C w Al x N v layer (0

摘要翻译： 提供了一种制造具有减少的裂纹数量和高加工性的Si（1-vwx）C w Al x N v基板的方法，制造外延晶片的方法，Si（1-vwx）C w Al x N v衬底和外延晶片。 制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。 首先，准备Si衬底11。 然后在Si（1-vwx）C w Al x N v层（0

公开(公告)号：EP1043763B1

公开(公告)日：2011-01-05

申请号：EP99952798.9

申请日：1999-10-28

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： OSE, Hiroki c/o Shin-Etsu Handotai Co., Ltd.,

IPC分类号： H01L21/205 ,  H01L21/22 ,  C30B23/02 ,  C30B23/04 ,  C30B23/06 ,  C30B23/08 ,  C23C16/44

CPC分类号： C23C16/45563 ,  C23C16/45561 ,  C23C16/45574 ,  C30B25/14 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  Y10T428/12528 ,  Y10T428/21 ,  Y10T428/31

摘要： A semiconductor wafer comprising a semiconductor monocrystalline substrate having a relatively low dopant concentration and a large diameter of 300 mm or more and a semiconductor thin film formed on a major surface of the substrate and having a uniform resistivity and including substantially no slip, and a vapor growth apparatus for producing such a semiconductor wafer. Dopant gases supplied through a common gas pipe (22a) serving as a main dopant gas pipe are introduced into a reaction vessel (10) from all the six inlet ports (18a, 18b, ..., 18f) provided in the direction of the width of the reaction vessel (10). Dopant gases supplied through first and second auxiliary pipes (22b, 22c) are additionally fed into the reaction vessel (10) from the inner inlet ports (18a, 18b) and the middle inlet ports (18c, 18d) serving as specific inlet ports.

公开(公告)号：EP2131398A1

公开(公告)日：2009-12-09

申请号：EP08738698.3

申请日：2008-03-21

申请人： Asahi Kasei EMD Corporation

发明人： SHIBATA, Yoshihiko ,  MIYAHARA, Masatoshi

IPC分类号： H01L29/26 ,  C30B23/08 ,  C30B29/40 ,  H01L21/203 ,  H01L33/00 ,  H01L43/06 ,  H01L43/08 ,  H01S5/323

CPC分类号： H01L29/20 ,  C30B23/025 ,  C30B25/18 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0254 ,  H01L21/02549 ,  H01L29/201 ,  H01L29/267 ,  H01L43/065

摘要： The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magnetoresistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer (2), which is a compound semiconductor that does not contain As, is directly formed on an Si substrate (1). As is present at an interface of the active layer (2) and a single crystal layer of the Si substrate (1). The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate (1) is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si.

摘要翻译： 本发明涉及一种化合物半导体层叠体没有启用到的InSb电影上的Si基片来形成，并且启用应用到磁传感器，显色：如霍尔元件，磁阻元件等，光学装置，颜色：诸如红外传感器等 。，和电子设备，颜色：诸如晶体管等，在工业上提供，以及用于制造该化合物半导体层叠体的方法。 活性层（2），它是一种化合物半导体不含有作为在基材上，直接形成在Si（1）。 作为存在于基片接口的有源层（2）和所述Si（1）的单晶层的。 化合物半导体至少含有氮。 化合物半导体为单晶薄膜。 在Si基板（1）为体单晶基板或在最上层为Si的薄膜基板。

公开(公告)号：EP1346085A4

公开(公告)日：2008-04-02

申请号：EP01998673

申请日：2001-11-30

申请人： UNIV NORTH CAROLINA STATE

发明人： CUOMO JEROME J ,  WILLIAMS N MARK ,  CARLSON ERIC P ,  HANSER ANDREW D ,  THOMAS DARIN T

IPC分类号： C30B29/38 ,  C23C14/00 ,  C23C14/35 ,  C30B23/00 ,  C30B23/02 ,  C30B25/18 ,  H01J37/34 ,  H01L21/203 ,  C30B23/08 ,  C30B25/06

CPC分类号： C30B29/403 ,  C23C14/0063 ,  C23C14/355 ,  C30B23/00 ,  C30B23/002 ,  C30B23/005 ,  C30B25/18 ,  C30B29/406 ,  C30B29/605 ,  H01J37/3408 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02631

摘要： A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal M N columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.

摘要翻译： 一种方法利用溅射传输技术来产生阵列或层自我形成的自取向柱状结构，其特征为在各种衬底上的离散的单晶III族氮化物柱或柱。 柱状结构在单个生长步骤中形成，因此不需要用于沉积，图案化和蚀刻生长掩模的处理步骤。 通过溅射靶产生III族金属源蒸气，与由含氮源气提供的氮结合。 调整或控制III / V比以在反应室内产生有利于优先柱生长的III族金属富集环境。 反应物蒸气物质沉积在生长表面上以在其上产生单晶MN柱。 这些色谱柱可用作应变消除平台，用于生长连续的低缺陷密度散装材料。 另外，可以重新调整生长条件以实现柱状外延过度生长，其中III族氮化物材料的聚结在柱的顶部发生，由此形成基本上连续的层，在其上可以沉积附加层。 介于中间的柱结构减轻了基材，薄膜或柱上方和下方的其他层之间的热失配应力。 提供利用非热电子电子/等离子体注射器组件的高沉积速率溅射方法来执行一个或多个生长步骤。

公开(公告)号：EP1038996B1

公开(公告)日：2007-09-05

申请号：EP99943276.8

申请日：1999-09-10

申请人： Japan Science and Technology Agency ,  Kawasaki, Masashi

发明人： KAWASAKI, Masashi Tokyo Inst. Tech ,  KOINUMA, Hideomi Tokyo Inst. Tech

IPC分类号： C30B23/08 ,  H01L21/203 ,  C30B23/02

CPC分类号： B01J19/0046 ,  B01J2219/00443 ,  B01J2219/00445 ,  B01J2219/00495 ,  B01J2219/00527 ,  B01J2219/00536 ,  B01J2219/00585 ,  B01J2219/0059 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/00612 ,  B01J2219/00659 ,  B01J2219/00689 ,  B01J2219/00745 ,  B01J2219/00747 ,  C30B23/002 ,  C40B30/08 ,  C40B40/18 ,  C40B60/14 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A combinatorial molecular layer epitaxy device comprising a pressure-controllable common chamber (22), at least one transferable substrate heating unit (36) having in the common chamber a substrate holder (48) holding at least one substrate and at least one pressure-controllable processing chamber (24, 26, 28) each corresponding to a substrate heating unit, wherein a growth chamber (24) out of processing chambers has a multiple-material supply means for supplying materials to substrates (5) held by each substrate heating unit, a gas supply means for supplying gas onto the surfaces of substrates, and an on-site observation means for observing on-site an epitaxial growth for each monolayer on a substrate surface, whereby forming each temperature-and pressure-controllable vacuum chamber by each substrate heating unit and each processing chamber.

公开(公告)号：EP0576566A4

公开(公告)日：1995-03-15

申请号：EP92908776

申请日：1992-03-18

申请人： UNIV BOSTON

发明人： MOUSTAKAS THEODORE D

IPC分类号： C30B23/08 ,  C30B23/02 ,  C30B29/38 ,  H01L21/203 ,  H01L21/205 ,  H01L21/314 ,  H01L21/318 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L33/32 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0075 ,  Y10S148/113

摘要： This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A molecular beam source of Ga and source of activated atomic and ionic nitrogen are provided within the growth chamber. The desired film is deposited by exposing the substrate to Ga and nitrogen sources in a two step growth process using a low temperature nucleation step and a high temperature growth step. The low temperature process is carried out at 100 DEG -400 DEG C. and the high temperature process is carried out at 600 DEG -900 DEG C. The preferred source of activated nitrogen is an electron cyclotron resonance microwave plasma.

公开(公告)号：EP0206603A1

公开(公告)日：1986-12-30

申请号：EP86304347

申请日：1986-06-06

申请人： MORRISON PUMPS SA

发明人： SELLSCHOP JACQUES P F

IPC分类号： C23C16/48 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04

CPC分类号： C30B25/105 ,  C23C16/483 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B25/02 ,  C30B29/04

摘要： A method of producing crystal growth on a substrate, particularly diamond, includes the steps of depositing the ions, atoms or molecules necessary for formation of the desired crystalline material on or in the surface of the substrate and simultaneously irradiating the deposited material by a laser beam which may be a continuous wave or pulsed laser, having a wavelength so chosen as to obtain resonance absorption by excitation of characteristic lattice vibrations in the deposited material. The method has particular applications to the growth of diamond on a diamond substrate.

摘要翻译： 在衬底，特别是金刚石上产生晶体生长的方法包括以下步骤：将形成所需结晶材料所需的离子，原子或分子沉积在衬底的表面上或其表面上，同时用激光束照射沉积的材料 其可以是连续波或脉冲激光，其具有如此选择的波长以通过激发沉积材料中的特征晶格振动来获得共振吸收。 该方法具有金刚石基底上金刚石生长的特殊应用。