公开(公告)号：EP4414483A1

公开(公告)日：2024-08-14

申请号：EP22878226.4

申请日：2022-08-25

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： OHTSUKI, Tsuyoshi ,  HAGIMOTO, Kazunori ,  ISHIZAKI, Junya ,  ABE, Tatsuo ,  SUZUKI, Atsushi ,  MATSUBARA, Toshiki

IPC分类号： C30B29/62 ,  C23C16/02 ,  C23C16/42 ,  C23C16/56 ,  C30B25/02 ,  C30B33/00 ,  H01L21/205

CPC分类号： H01L21/2015 ,  C23C16/02 ,  C23C16/42 ,  C23C16/56 ,  C30B25/02 ,  C30B29/62 ,  C30B33/00

摘要： The present invention is a method for producing a heteroepitaxial film, including heteroepitaxial growing a 3C-SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, a first step of removing a native oxide film on a surface of the single crystal Si substrate by hydrogen baking, a second step of performing nucleation of SiC at 1333 Pa or lower and 300°C or higher and 950°C or lower and a third step of forming the 3C-SiC single crystal film and forming a vacancy directly under the 3C-SiC single crystal film at 1333 Pa or lower and 800°C or higher and lower than 1200°C, while supplying a source gas containing carbon and silicon; and a fourth step of producing the heteroepitaxial film by delaminating the 3C-SiC single crystal film along the vacancy. This provides the method for efficiently obtaining the heteroepitaxial film in a thin film shape while minimizing damage to a device and material loss.

公开(公告)号：EP4411791A1

公开(公告)日：2024-08-07

申请号：EP22876200.1

申请日：2022-09-27

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： SUZUKI, Atsushi ,  MIZUSAWA, Yasushi ,  MATSUBARA, Toshiki ,  ABE, Tatsuo ,  OHTSUKI, Tsuyoshi

IPC分类号： H01L21/322 ,  H01L21/20 ,  H01L21/205

CPC分类号： H01L21/322 ,  H01L21/2015 ,  H01L21/20

摘要： The present invention is an epitaxial wafer production method, including forming a gettering epitaxial film containing silicon and carbon on a silicon substrate under reduced pressure using a reduced pressure CVD apparatus, and forming a silicon epitaxial film on the gettering epitaxial film. This provides a low-cost, low-contamination carbon-containing epitaxial wafer, and a method for producing such an epitaxial wafer.

公开(公告)号：EP4407077A1

公开(公告)日：2024-07-31

申请号：EP22872512.3

申请日：2022-06-30

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： MATSUBARA, Toshiki ,  SUZUKI, Atsushi ,  ABE, Tatsuo ,  TSUCHIYA, Keitaro ,  SUZUKI, Yukari ,  OHTSUKI, Tsuyoshi

IPC分类号： C30B29/36 ,  H01L21/20 ,  H01L21/205

CPC分类号： C30B29/36 ,  H01L21/2015 ,  H01L21/20

摘要： The present invention provides a method for producing a heteroepitaxial wafer heteroepitaxially growing a 3C-SiC single crystal film on a single crystal silicon substrate, the method including: with using a reduced-pressure CVD apparatus, a first step of removing a native oxide film on a surface of the single crystal silicon substrate by hydrogen baking; a second step of nucleation of SiC on the single crystal silicon substrate on a condition of pressure of 13332 Pa or lower and a temperature of 300°C or higher and 950°C or lower and a third step of forming the 3C-SiC single crystal film by growing a SiC single crystal on condition of pressure of 13332 Pa or lower and a temperature of 800°C or higher and lower than 1200°C, while supplying a source gas containing carbon and silicon into the reduced-pressure CVD apparatus. This provides the method for producing the heteroepitaxial wafer that can efficiently grow high-quality 3C-SiC single crystal film heteroepitaxially on the single crystal silicon substrate.