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公开(公告)号：EP4414483A1
公开(公告)日：2024-08-14
申请号：EP22878226.4
申请日：2022-08-25
发明人： OHTSUKI, Tsuyoshi , HAGIMOTO, Kazunori , ISHIZAKI, Junya , ABE, Tatsuo , SUZUKI, Atsushi , MATSUBARA, Toshiki
摘要： The present invention is a method for producing a heteroepitaxial film, including heteroepitaxial growing a 3C-SiC single crystal film on a single crystal Si substrate and then delaminating thereof, the method includes: with using a reduced-pressure CVD apparatus, a first step of removing a native oxide film on a surface of the single crystal Si substrate by hydrogen baking, a second step of performing nucleation of SiC at 1333 Pa or lower and 300°C or higher and 950°C or lower and a third step of forming the 3C-SiC single crystal film and forming a vacancy directly under the 3C-SiC single crystal film at 1333 Pa or lower and 800°C or higher and lower than 1200°C, while supplying a source gas containing carbon and silicon; and a fourth step of producing the heteroepitaxial film by delaminating the 3C-SiC single crystal film along the vacancy. This provides the method for efficiently obtaining the heteroepitaxial film in a thin film shape while minimizing damage to a device and material loss.
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公开(公告)号：EP4148769A1
公开(公告)日：2023-03-15
申请号：EP21800764.9
申请日：2021-03-08
发明人： OHTSUKI, Tsuyoshi , ABE, Tatsuo
IPC分类号： H01L21/304 , H01L21/31 , H01L21/316 , H01L21/66
摘要： The present invention is a method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates each having a chemical oxide film with a different constitution, forming a thermal oxide film under identical thermal oxidization treatment conditions, and determining a correlation between the constitution of the chemical oxide film and a thickness of the thermal oxide film in advance; a substrate cleaning step of cleaning a semiconductor substrate; a thermal oxide film thickness estimation step of determining a constitution of a chemical oxide film formed on the semiconductor substrate by the cleaning in the substrate cleaning step and, based on the correlation, estimating a thickness of a thermal oxide film on a hypothesis that the semiconductor substrate has been subjected to a thermal oxidization treatment under the thermal oxidization treatment conditions in the correlation acquisition step; a thermal oxidization treatment condition determination step of determining thermal oxidization treatment conditions based on the thermal oxidization treatment conditions in the correlation acquisition step so that the thickness of the thermal oxide film is a predetermined thickness; and a thermal oxide film formation step of forming a thermal oxide film on the semiconductor substrate under the thermal oxidization treatment conditions determined in the thermal oxidization treatment condition determination step. Consequently, a thermal oxide film is formed with a thin target film thickness with excellent reproducibility.
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公开(公告)号：EP1298715A1
公开(公告)日：2003-04-02
申请号：EP02703960.1
申请日：2002-03-11
IPC分类号： H01L21/304
CPC分类号： H01L21/02052
摘要： There is provided a storage water of a silicon wafer wherein a liquid temperature of the storage water is 0 to 18 °C. And there is provided a shower water of a silicon wafer wherein a liquid temperature of the shower water is 0 to 18 °C. The wafer is stored in the storage water, and showered using the shower water. The present invention also relates to a method for storing silicon wafer wherein the silicon wafer is showered using a shower water of which liquid temperature is 0 to 18 °C, and is then stored in liquid using a storage water of which liquid temperature is 0 to 18 °C. Thereby, there can be provided a water for storing a silicon wafer, a method for storing it, a water for showering it and a method for showering it wherein degradation of the wafer quality can be prevented.
摘要翻译： 提供储存水的液体温度为0〜18℃的硅晶片的储水。另外，提供了一种硅晶片的淋浴水，其中淋浴水的液温为0〜18℃ 将晶片储存在储存水中，并使用淋浴水淋浴。 本发明还涉及一种硅晶片的存储方法，其中使用液温为0〜18℃的淋浴水对硅晶片进行淋洗，然后使用液体温度为0〜 18℃。因此，可以提供一种用于存储硅晶片的水，其存储方法，用于淋浴的水以及用于喷淋的方法，其中可以防止晶片质量的劣化。
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公开(公告)号：EP1052688A1
公开(公告)日：2000-11-15
申请号：EP99973349.6
申请日：1999-11-29
发明人： ABE, Tatsuo , DOI, Tsutomu
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , H01L21/67051 , Y10S134/902
摘要： This invention provides a cleaning method of cleaning a laser mark formed on a semiconductor wafer. A semiconductor wafer (10) is rotated in a circumferential direction, and a laser mark (51) is detected indirectly or directly in a non-contact manner. Rotation of the semiconductor wafer is controlled on the basis of detection of the laser mark, and an ultrasonic vibration-applied processing solution is sprayed to the laser mark.
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公开(公告)号：EP4328958A1
公开(公告)日：2024-02-28
申请号：EP22791417.3
申请日：2022-03-16
发明人： ABE, Tatsuo , TANAKA, Yuki
IPC分类号： H01L21/304
摘要： The present invention is a silicon wafer manufacturing method including a grinding step of grinding front and back surfaces of a raw wafer to obtain a wafer having an arithmetic surface roughness Sa per 2 µm 2 of 10 nm or less; a dry-etching step of subjecting the wafer obtained in the grinding step to isotropic whole-surface dry-etching with an etching removal of 1 um or less per surface to remove a mechanically damaged layer introduced into each of front and back surfaces of the wafer in the grinding step; and a double-side polishing step of, after the dry-etching step, polishing both surfaces of the wafer with a stock removal of 3 um or less per surface. Thus, the silicon wafer manufacturing method that enables to manufacture a wafer having high flatness can be provided.
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公开(公告)号：EP1298715B1
公开(公告)日：2013-08-07
申请号：EP02703960.1
申请日：2002-03-11
IPC分类号： H01L21/304 , H01L21/00
CPC分类号： H01L21/02052
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7.发明公开
公开(公告)号：EP4358118A1
公开(公告)日：2024-04-24
申请号：EP22824835.7
申请日：2022-06-06
发明人： OHTSUKI, Tsuyoshi , ABE, Tatsuo
IPC分类号： H01L21/31 , H01L21/316
CPC分类号： H01L21/31
摘要： The present invention provides a method for forming a thermal oxide film, comprising the steps of: a step of acquiring a first correlation between an amount of OH groups and thickness of the thermal oxide film by forming a thermal oxide film by thermal oxidation treatment under the same condition after preparing a plurality of semiconductor substrates having chemical oxide films formed by cleaning and having different amounts of OH groups; a step of acquiring a second correlation between an amount of OH groups and drying conditions by cleaning under the same cleaning condition followed by changed drying conditions to substrates and measuring amounts of OH groups; a step of acquiring a third correlation between drying condition and thickness of thermal oxide film by using the first correlation and the second correlation; a step of determining drying condition and thermal oxidation condition by using the third correlation; a step of cleaning the substrates; and a step of drying and a thermal oxide film formation after the cleaning step using the drying conditions and thermal oxidation treatment conditions determined in the drying and thermal oxidation treatment condition determination step. This provides a method for forming thermal oxide film in which a thermal oxide film can be formed with intended thickness with good reproducibility while without changing the composition of the cleaning chemical solution.
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8.发明公开
公开(公告)号：EP4307347A1
公开(公告)日：2024-01-17
申请号：EP22766793.8
申请日：2022-02-21
发明人： FUJII, Kota , ABE, Tatsuo
IPC分类号： H01L21/304 , H01L21/308
摘要： The present invention is a method of cleaning a silicon wafer in which the silicon wafer is roughened, including: forming an oxide film on the silicon wafer by SC1 cleaning, SC2 cleaning, or ozone water cleaning; cleaning the silicon wafer on which the oxide film is formed by using any one of: a diluted aqueous solution of ammonium hydroxide having an ammonium hydroxide concentration of 0.051 % by mass or less; or a diluted aqueous solution containing ammonium hydroxide and hydrogen peroxide water and having an ammonium hydroxide concentration of 0.051 % by mass or less and a hydrogen peroxide concentration of 0.2 % by mass or less, the hydrogen peroxide concentration being four times or less the ammonium hydroxide concentration, to roughen front and rear faces of the silicon wafer. Thus, a cleaning method capable of roughening the front and rear faces of a silicon wafer is provided.
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9.发明公开
公开(公告)号：EP4152362A1
公开(公告)日：2023-03-22
申请号：EP21804110.1
申请日：2021-03-03
发明人： OHTSUKI, Tsuyoshi , ABE, Tatsuo
IPC分类号： H01L21/3065
摘要： The present invention is a method for dry-etching a semiconductor substrate having an oxide film, including: evaluating a film quality of the oxide film and determining a time for performing the dry-etching on a basis of results of the evaluation in advance. This provides a method for controlling the etching amount of an oxide film accurately and suppressing over-etching and insufficient etching without influence from variation in the film quality of the oxide film when dry-etching the oxide film on the surface of the semiconductor substrate.
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公开(公告)号：EP4411791A1
公开(公告)日：2024-08-07
申请号：EP22876200.1
申请日：2022-09-27
IPC分类号： H01L21/322 , H01L21/20 , H01L21/205
CPC分类号： H01L21/322 , H01L21/2015 , H01L21/20
摘要： The present invention is an epitaxial wafer production method, including forming a gettering epitaxial film containing silicon and carbon on a silicon substrate under reduced pressure using a reduced pressure CVD apparatus, and forming a silicon epitaxial film on the gettering epitaxial film. This provides a low-cost, low-contamination carbon-containing epitaxial wafer, and a method for producing such an epitaxial wafer.
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