公开(公告)号：EP2175477B1

公开(公告)日：2017-01-04

申请号：EP08776766.1

申请日：2008-07-03

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： KOBAYASHI, Norihiro ,  AGA, Hiroji ,  NAGAOKA, Yasuo ,  NOTO, Nobuhiko

IPC分类号： H01L21/762 ,  H01L21/265 ,  H01L21/02

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/26506

摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.

公开(公告)号：EP2175477A1

公开(公告)日：2010-04-14

申请号：EP08776766.1

申请日：2008-07-03

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： KOBAYASHI, Norihiro ,  AGA, Hiroji ,  NAGAOKA, Yasuo ,  NOTO, Nobuhiko

IPC分类号： H01L21/02 ,  H01L27/12

CPC分类号： H01L21/76254 ,  H01L21/02057 ,  H01L21/26506

摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.

摘要翻译： 本发明是一种通过离子注入剥离方法制造键合晶片的方法，该方法至少包括以下步骤：将具有通过气体离子注入形成的微泡层的键合晶片与作为支撑衬底的基底晶片键合，剥离 以所述微小气泡层为界，在所述基底基板上形成薄膜，所述方法包括：在使用臭氧水使所述接合基板剥离后，清洗所述接合基板; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并去除热氧化膜，在键合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。 结果，能够消除由离子注入引起的损伤并且可以抑制凹陷缺陷的发生而不会使剥离后的贴合晶片的薄膜表面上的表面粗糙度劣化的贴合晶片的制造方法是 提供。

公开(公告)号：EP3101683A1

公开(公告)日：2016-12-07

申请号：EP15740594.5

申请日：2015-01-13

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： NAGAOKA, Yasuo

IPC分类号： H01L21/306 ,  H01L21/02 ,  H01L21/304

CPC分类号： H01L21/30604 ,  H01L21/26513 ,  H01L21/67086 ,  H01L21/76254

摘要： The present invention is a semiconductor-wafer cleaning tank in which semiconductor wafers are immersed in a cleaning solution and cleaned, including a tank body, composed of quartz, for storing the cleaning solution to immerse the semiconductor wafers in the cleaning solution, an overflow-receiving part, composed of quartz and provided around an opening of the tank body, for receiving the cleaning solution overflowing from an upper end of the opening of the tank body, and a heat-insulating wall provided around the tank body, in which the heat-insulating wall forms an unbroken enclosure around the tank body with a hollow layer formed between the heat-insulating wall and a side wall of the tank body. As a result, there is provided a cleaning tank for use in an etching step that allows bonded wafers keeping film-thickness uniformity even after the etching step for adjusting the film thickness to be manufactured in high yield.

摘要翻译： 本发明是一种半导体晶片清洗槽，其中将半导体晶片浸入清洁溶液中并清洗，包括由石英组成的罐体，用于存储清洁溶液以将半导体晶片浸入清洁溶液中， 接收部件，由石英构成并且设置在罐体的开口周围，用于接收从罐体的开口的上端溢出的清洗溶液;以及设置在罐体周围的绝热壁，其中， 绝缘壁在罐主体周围形成一个不间断的外壳，其中形成在绝热壁和罐体的侧壁之间的中空层。 结果，提供了一种在蚀刻步骤中使用的清洗槽，即使在用于以高产率调节制造膜厚度的蚀刻步骤之后，也可以使粘结晶片保持膜厚均匀性。

公开(公告)号：EP3176810A1

公开(公告)日：2017-06-07

申请号：EP15826876.3

申请日：2015-06-18

申请人： Shin-Etsu Handotai Co., Ltd.

发明人： NAGAOKA, Yasuo ,  AGA, Hiroji

IPC分类号： H01L21/304 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14

CPC分类号： B24B37/20 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/304 ,  H01L21/30625

摘要： The present invention is a method for polishing a germanium wafer having a surface composed of germanium, including: adding aqueous hydrogen peroxide to a first polishing slurry of an aqueous alkaline solution containing colloidal silica to make a second polishing slurry, and polishing the surface of the germanium wafer by using the second polishing slurry; wherein the aqueous hydrogen peroxide is added to the first polishing slurry in a concentration such that 30 wt% aqueous hydrogen peroxide is added in a volume of more than 0 vol% and 0.1 vol% or less based on the volume of the first polishing slurry, and the polishing is performed by using the second polishing slurry. This provides a method for polishing a germanium wafer that can make the surface roughness of a polished Ge surface be sufficiently small, and can sufficiently suppress generation of interface defects such as voids and blisters when used for a wafer to be bonded.

摘要翻译： 本发明是一种研磨具有由锗构成的表面的锗晶片的方法，包括：向含有胶体二氧化硅的碱性水溶液的第一抛光浆料中加入过氧化氢水溶液以制备第二抛光浆料，并且抛光 通过使用第二抛光浆料来形成锗晶片; 其中，所述过氧化氢水溶液以基于第一抛光浆料的体积大于0体积％且0.1体积％以下的体积添加30重量％过氧化氢水的浓度添加到第一抛光浆料中， 并且通过使用第二抛光浆料进行抛光。 这提供了一种用于抛光锗晶片的方法，其可以使得抛光的Ge表面的表面粗糙度足够小，并且可以充分地抑制用于待接合的晶片时产生界面缺陷如空隙和气泡。