POLISHING MATERIAL, COMPOSITION FOR POLISHING, AND POLISHING METHOD
    2.
    发明公开
    POLISHING MATERIAL, COMPOSITION FOR POLISHING, AND POLISHING METHOD 审中-公开
    抛光材料,抛光组合物和抛光方法

    公开(公告)号:EP3196272A1

    公开(公告)日:2017-07-26

    申请号:EP15842947.2

    申请日:2015-09-10

    IPC分类号: C09K3/14 B24B37/00 C09G1/02

    摘要: Abrasives, a polishing composition , and a polishing method that can reduce undulation of an outer surface of a resin coating by polishing with reduced occurrence of polishing flaws. The polishing composition includes abrasives of aluminium oxide particles having a specific surface area of 5 m 2 /g or more and 50 m 2 /g or less and an average secondary particle diameter of 0.05 µm or more and 4.8 µm or less. This polishing composition can be used for polishing an outer surface of the resin coating.

    摘要翻译: 抛光剂,抛光组合物和抛光方法,其能够通过抛光减少抛光缺陷的发生来减少树脂涂层的外表面的起伏。 研磨用组合物含有比表面积为5m 2 / g以上且50m 2 / g以下且平均二次粒径为0.05μm以上且4.8μm以下的氧化铝粒子的研磨材料。 该抛光组合物可用于抛光树脂涂层的外表面。

    METHOD FOR POLISHING GERMANIUM WAFER
    3.
    发明公开
    METHOD FOR POLISHING GERMANIUM WAFER 审中-公开
    抛光锗晶片的方法

    公开(公告)号:EP3176810A1

    公开(公告)日:2017-06-07

    申请号:EP15826876.3

    申请日:2015-06-18

    摘要: The present invention is a method for polishing a germanium wafer having a surface composed of germanium, including: adding aqueous hydrogen peroxide to a first polishing slurry of an aqueous alkaline solution containing colloidal silica to make a second polishing slurry, and polishing the surface of the germanium wafer by using the second polishing slurry; wherein the aqueous hydrogen peroxide is added to the first polishing slurry in a concentration such that 30 wt% aqueous hydrogen peroxide is added in a volume of more than 0 vol% and 0.1 vol% or less based on the volume of the first polishing slurry, and the polishing is performed by using the second polishing slurry. This provides a method for polishing a germanium wafer that can make the surface roughness of a polished Ge surface be sufficiently small, and can sufficiently suppress generation of interface defects such as voids and blisters when used for a wafer to be bonded.

    摘要翻译: 本发明是一种研磨具有由锗构成的表面的锗晶片的方法,包括:向含有胶体二氧化硅的碱性水溶液的第一抛光浆料中加入过氧化氢水溶液以制备第二抛光浆料,并且抛光 通过使用第二抛光浆料来形成锗晶片; 其中,所述过氧化氢水溶液以基于第一抛光浆料的体积大于0体积%且0.1体积%以下的体积添加30重量%过氧化氢水的浓度添加到第一抛光浆料中, 并且通过使用第二抛光浆料进行抛光。 这提供了一种用于抛光锗晶片的方法,其可以使得抛光的Ge表面的表面粗糙度足够小,并且可以充分地抑制用于待接合的晶片时产生界面缺陷如空隙和气泡。

    POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SUBSTRATE
    4.
    发明公开
    POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SUBSTRATE 审中-公开
    抛光组合物,抛光方法和生产基材的方法

    公开(公告)号:EP3121239A1

    公开(公告)日:2017-01-25

    申请号:EP15764933.6

    申请日:2015-03-09

    发明人: YAMATO, Yasuyuki

    IPC分类号: C09K3/14 B24B37/00 H01L21/304

    摘要: To provide a polishing composition that can be used as an alternative of a polishing composition containing cerium oxide abrasive grains in STI and other such CMP applications, and to provide a polishing method and a method for producing a substrate using this polishing composition.
    A polishing composition being used in applications for polishing a layer that contains a substance having a pH range presenting a positive zeta potential in an aqueous solution of pH 6 or lower, wherein the polishing composition contains abrasive grains (A), abrasive grains (B), and a pH adjusting agent, and the abrasive grains (B) has a negative zeta potential in an aqueous solution of pH 6 or lower, and the value of the average secondary particle diameter of the abrasive grains (B) is less than the value of the average secondary particle diameter of the abrasive grains (A) and is 15 nm or less and the polishing composition has a pH of 6 or lower.

    摘要翻译: 本发明提供一种抛光剂组合物,其可以用作STI等CMP应用中含有氧化铈磨粒的抛光剂组合物的替代物,并提供一种抛光方法和使用该抛光剂组合物的基板的制造方法。 一种抛光组合物,其用于抛光含有在pH6或更低的水溶液中呈现正ζ电位的pH范围的物质的层的应用,其中所述抛光组合物包含磨粒(A),磨粒(B) (B)在pH6以下的水溶液中具有负的Z电位,并且磨粒(B)的平均二次粒径的值小于上述值 的磨粒(A)的平均二次粒径为15nm以下,研磨用组合物的pH为6以下。

    SCHLEIFELEMENT
    5.
    发明公开
    SCHLEIFELEMENT 审中-公开

    公开(公告)号:EP3013919A1

    公开(公告)日:2016-05-04

    申请号:EP14730141.0

    申请日:2014-06-11

    申请人: Robert Bosch GmbH

    发明人: WIRZ, Viktor

    IPC分类号: C09K3/14 B24D3/34 B24D18/00

    CPC分类号: B24D3/346 B24D18/00 C09K3/14

    摘要: The invention relates to a grinding element (10, 110, 210) with a main part (12, 112, 212) which comprises at least one base material (14, 114, 214). The main part (12, 112, 212) comprises at least one additional active material (16, 116, 216) which is provided in order to at least partly influence at least one machining parameter at least in an operating state.

    摘要翻译: 本发明涉及一种具有主要部分(12,112,212)的磨削元件(10,110,210),其包括至少一个基础材料(14,114,214)。 主要部件(12,112,212)包括至少一个额外的活性材料(16,116,216),其被设置成至少在操作状态下至少部分地影响至少一个加工参数。