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    SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME
    2.
    发明公开
    SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME 有权
    用于生长碳化硅单晶的晶种，其制备方法和硅碳化物单晶及生产该晶体的方法

    公开(公告)号：EP2309039A1

    公开(公告)日：2011-04-13

    申请号：EP09773287.9

    申请日：2009-06-12

    申请人： Showa Denko K.K.

    发明人： OYANAGI Naoki ,  KOGOI Hisao

    IPC分类号： C30B29/36

    CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  Y10T428/24273 ,  Y10T428/263 ,  Y10T428/265

    摘要： There is provided a seed crystal for silicon carbide single crystal growth, which is capable of suppressing crystal defects that arise from the interface between a seed crystal and graphite, and producing a high quality silicon carbide single crystal having a low crystal defect density, with good reproducibility. As such a seed crystal for silicon carbide single crystal growth, use is made of a seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder, and which has a seed crystal (4) formed of silicon carbide having one surface defined as a growth surface (4a) for growing a silicon carbide single crystal by a sublimation method, and a carbon film (12) formed on the surface (4b) opposite to the growth surface of the seed crystal (4), wherein the film density of the carbon film (12) is 1.2 g/cm 3 to 3.3 g/cm 3 .

    摘要翻译： 提供一种碳化硅单晶生长用晶种，其能够抑制由晶种和石墨之间的界面引起的晶体缺陷，并且生产具有低晶体缺陷密度的高质量碳化硅单晶，良好 重复性。 作为用于碳化硅单晶生长的这种晶种，使用附着在装有原料碳化硅粉末的石墨坩埚的盖子上的用于碳化硅单晶生长的晶种（13），并且其具有 由碳化硅形成的晶种（4），所述碳化硅的一个表面被定义为用于通过升华法生长碳化硅单晶的生长表面（4a），以及形成在所述表面（4b）上的碳膜（12），所述碳膜（12） （12）的膜密度为1.2g / cm 3〜3.3g / cm 3。

    TITANIUM OXIDE PRODUCTION METHOD
    3.
    发明公开
    TITANIUM OXIDE PRODUCTION METHOD 审中-公开

    公开(公告)号：EP3904293A1

    公开(公告)日：2021-11-03

    申请号：EP20759668.5

    申请日：2020-02-13

    申请人： Showa Denko K.K.

    发明人： CHIKAMI Hideaki ,  MIZUE Kei ,  KOGOI Hisao

    IPC分类号： C01G23/053

    摘要： The present invention provides a method of producing titanium oxide capable of maintaining a high content of an anatase form crystal phase at a low cost even under a high temperature environment. The method of producing titanium oxide includes a step of synthesizing titanium oxide by using an aqueous solution obtained by dissolving titanium tetrachloride and an α-hydroxycarboxylic acid having 3 carboxy groups as a reaction liquid and bringing the reaction liquid to a reaction temperature of 60°C or higher and the boiling point of the reaction liquid or lower, wherein the ratio of the amount (mol) of the α-hydroxycarboxylic acid to the amount (mol) of Ti in the reaction liquid is 0.006 or more and 0.017 or less, and the concentration of Ti in the reaction liquid is 0.07 mol/L or more and 0.70 mol/L or less.

    METHOD OF PRODUCING SILICON CARBIDE MONOCRYSTALS
    5.
    发明公开
    METHOD OF PRODUCING SILICON CARBIDE MONOCRYSTALS 有权
    生产碳化硅单晶的方法

    公开(公告)号：EP2508655A1

    公开(公告)日：2012-10-10

    申请号：EP10832998.8

    申请日：2010-10-18

    申请人： Showa Denko K.K.

    发明人： MASUDA Takashi ,  KOGOI Hisao ,  HASHIMOTO Katsuhiko

    IPC分类号： C30B29/36

    CPC分类号： C30B29/36 ,  C30B23/025

    摘要： The process for producing silicon carbide single crystals of the present invention comprises a step for growing single crystals of silicon carbide on a silicon carbide seed crystal by supplying a sublimed gas of a silicon carbide source material to the silicon carbide seed crystal arranged on a pedestal, wherein a spacing member composed of silicon carbide is arranged between the pedestal and the silicon carbide seed crystal, the spacing member is non-adhesively held on the pedestal by a supporting member, the silicon carbide seed crystal is adhered to the surface of the spacing member on the opposite side of the pedestal, and the spacing member and the supporting member are relatively arranged so that the adhesive surface of the spacing member adhered with the silicon carbide seed crystal is separated by 5 mm or more in the vertical direction from the lowest position of the supporting member.

    摘要翻译： 本发明的碳化硅单晶的制造方法包括以下步骤：通过将碳化硅源材料的升华气体供给到设置在台座上的碳化硅种晶，在碳化硅种晶上生长碳化硅单晶， 其特征在于，在所述基座与所述碳化硅籽晶之间配置由碳化硅构成的间隔部件，所述间隔部件通过支撑部件非粘接地保持在所述基座上，所述碳化硅籽晶附着于所述间隔部件的表面 在基座的相反侧，并且间隔构件和支撑构件相对地布置为使得与碳化硅籽晶附着的间隔构件的粘合表面从最低位置在垂直方向上分开5mm或更多 的支撑构件。