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    SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME
    2.
    发明公开
    SEED CRYSTAL FOR GROWTH OF SILICON CARBIDE SINGLE CRYSTAL, PROCESS FOR PRODUCING THE SAME, AND SILICONE CARBIDE SINGLE CRYSTAL AND PROCESS FOR PRODUCING THE SAME 有权
    用于生长碳化硅单晶的晶种，其制备方法和硅碳化物单晶及生产该晶体的方法

    公开(公告)号：EP2309039A1

    公开(公告)日：2011-04-13

    申请号：EP09773287.9

    申请日：2009-06-12

    申请人： Showa Denko K.K.

    发明人： OYANAGI Naoki ,  KOGOI Hisao

    IPC分类号： C30B29/36

    CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  Y10T428/24273 ,  Y10T428/263 ,  Y10T428/265

    摘要： There is provided a seed crystal for silicon carbide single crystal growth, which is capable of suppressing crystal defects that arise from the interface between a seed crystal and graphite, and producing a high quality silicon carbide single crystal having a low crystal defect density, with good reproducibility. As such a seed crystal for silicon carbide single crystal growth, use is made of a seed crystal for silicon carbide single crystal growth (13) which is attached to the lid of a graphite crucible charged with a raw material silicon carbide powder, and which has a seed crystal (4) formed of silicon carbide having one surface defined as a growth surface (4a) for growing a silicon carbide single crystal by a sublimation method, and a carbon film (12) formed on the surface (4b) opposite to the growth surface of the seed crystal (4), wherein the film density of the carbon film (12) is 1.2 g/cm 3 to 3.3 g/cm 3 .

    摘要翻译： 提供一种碳化硅单晶生长用晶种，其能够抑制由晶种和石墨之间的界面引起的晶体缺陷，并且生产具有低晶体缺陷密度的高质量碳化硅单晶，良好 重复性。 作为用于碳化硅单晶生长的这种晶种，使用附着在装有原料碳化硅粉末的石墨坩埚的盖子上的用于碳化硅单晶生长的晶种（13），并且其具有 由碳化硅形成的晶种（4），所述碳化硅的一个表面被定义为用于通过升华法生长碳化硅单晶的生长表面（4a），以及形成在所述表面（4b）上的碳膜（12），所述碳膜（12） （12）的膜密度为1.2g / cm 3〜3.3g / cm 3。