公开(公告)号：EP2383601B1

公开(公告)日：2015-12-23

申请号：EP11174118.7

申请日：2009-12-23

申请人： Silex Microsystems AB

发明人： Ebefors, Thorbjörn ,  Kälvesten, Edvard ,  Ågren, Peter ,  Svedin, Niklas

IPC分类号： G02B26/08 ,  B81B7/00 ,  G02B6/35 ,  H01L21/768 ,  H01L23/48

CPC分类号： G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

公开(公告)号：EP2383601A1

公开(公告)日：2011-11-02

申请号：EP11174118.7

申请日：2009-12-23

申请人： Silex Microsystems AB

发明人： Ebefors, Thorbjörn ,  Kälvesten, Edvard ,  Ågren, Peter ,  Svedin, Niklas

IPC分类号： G02B26/08 ,  B81C1/00

CPC分类号： G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： A vent hole precursor structure (26) in an intermediate product for a semiconductor device having delicate structures (27,28),
Wherein
said intermediate product has a cavity (21) with a pressure differing from the pressure of the surroundings, said intermediate product comprising a first wafer (20) in which there is formed a depression (21), said first wafer being bonded to a second wafer (22) comprising a device layer (23) from which the structures (27,28) are to be made by etching; and a hole or groove (26) having a predefined depth and extends downwards into the device layer, such that the cavity (21) during etching is opened up before the etching procedure breaks through the device layer (23) forming the structures (27,28).

摘要翻译： 一种用于具有精细结构（27,28）的半导体器件的中间产品中的通气孔前体结构（26），其中所述中间产品具有不同于周围压力的压力的空腔（21），所述中间产品包括 第一晶片（20），其中形成有凹陷（21），所述第一晶片被结合到第二晶片（22），第二晶片（22）包括器件层（23），结构（27,28）将由器件层 腐蚀; 以及具有预定深度并且向下延伸进入器件层的孔或凹槽（26），使得蚀刻过程中的空腔（21）在蚀刻过程突破穿过形成结构（27,21）的器件层（23）之前被打开， 28）。

公开(公告)号：EP2381289A1

公开(公告)日：2011-10-26

申请号：EP11174115.3

申请日：2009-12-23

申请人： Silex Microsystems AB

发明人： Ebefors, Thorbjörn ,  Kälvesten, Edvard ,  Ågren, Peter ,  Svedin, Niklas ,  Ericson, Thomas

IPC分类号： G02B26/08 ,  H01L21/768 ,  B81B7/00

CPC分类号： G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.

摘要翻译： 本发明涉及分层微电子和/或微机械结构，其包括在导电层之间具有绝缘层的至少三个交替导电层。 还提供了在第一外层中的通孔，所述通孔包括通过该层由晶片天然材料制成的绝缘导电连接，延伸穿过其它层并在第一外层中延伸到所述通孔中的导电插塞，以便提供 通过层的导电性，以及围绕所述其它层的至少一个所选层的所述导电插塞的绝缘外壳，用于将所述插塞与所述选定层中的材料绝缘。 它还涉及微电子和/或微机械装置，其包括设置在空腔上方的可动构件，使得其可在至少一个方向上移动。 该装置具有根据本发明的分层结构。 还提供了制造这种分层MEMS结构的方法。