公开(公告)号：EP1320117A2

公开(公告)日：2003-06-18

申请号：EP02027938.6

申请日：2002-12-13

申请人： Sony International (Europe) GmbH

发明人： Harnack, Oliver, c/o Ad. Tech. Center Stuttgart ,  Ford, William E., c/o Ad. Tech. Center Stuttgart ,  Wessels, Jurina, c/o Ad. Tech. Center Stuttgart ,  Yasuda, Akio, c/o Ad. Tech. Center Stuttgart

IPC分类号： H01J37/305

CPC分类号： B82Y10/00 ,  H01J37/3056 ,  H01J2237/31735 ,  H01J2237/3174

摘要： The invention relates to a method for defect (36) and conductivity engineering of a conducting nanoscaled structure (22) or at least one part of it by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focused electron beam on the nanoscaled structure or an individual portion (36) of it to be engineered and/or by applying one or multiple wires of the conducting nanoscaled structure by applying a current density J D,I whereas the current density J D,I has a value below a critical current density J C which is the current per cross-section area of the wire at which the wire fails due to overheating and electromigration, and not lower than 3 orders of magnitude below J C . The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.

摘要翻译： 本发明涉及一种通过产生纳米级结构的导热材料的热诱导迁移，熔化，溅射和/或蒸发来对导电纳米级结构（22）或其至少一部分进行缺陷（36）和导电工程的方法 通过将聚焦的电子束引导到纳米级结构或其单个部分（36）上进行工程设计和/或通过施加电流密度JD，I施加导电纳米级结构的一根或多根导线，而电流密度JD， I的值低于临界电流密度JC，该临界电流密度JC是由于过热和电迁移引起的导线失效的导线每个横截面积的电流，并且不低于JC的3个数量级。 本发明还涉及具有用于这种方法的用于检测背散射电子的滤波器的二次电子显微镜和具有用于检测背散射电子的这种滤波器的相应二次电子显微镜的用途。