公开(公告)号：EP2027594B1

公开(公告)日：2011-12-14

申请号：EP06786767.1

申请日：2006-07-10

申请人： NexGen Semi Holding, Inc.

发明人： ZANI, Michael John ,  SCOTT, Jeffrey Winfield ,  BENNAHMIAS, Mark Joseph ,  MAYSE, Mark Anthony

IPC分类号： H01J37/317 ,  H01J37/04 ,  H01J37/302

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

摘要： A chamber (102 in Fig. 2) for exposing a workpiece to charged particles (101 in Fig. 2) includes a source, a collimator, a beam digitizer (230 in Fig. 2) downstream of the collimator configured to create a digital beam including groups of at least one charged particle (Fig. 3B and 5) by adjusting longitudinal spacing between the particles along the axis, a deflector (210 in Fig. 6A and 6B) downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.

公开(公告)号：EP2027594A4

公开(公告)日：2010-03-17

申请号：EP06786767

申请日：2006-07-10

申请人： NEXGEN SEMI HOLDING INC

发明人： ZANI MICHAEL JOHN ,  SCOTT JEFFREY WINFIELD ,  BENNAHMIAS MARK JOSEPH ,  MAYSE MARK ANTHONY

IPC分类号： H01J37/317 ,  H01J37/04 ,  H01J37/302

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

公开(公告)号：EP1000425B1

公开(公告)日：2006-09-06

申请号：EP98942596.2

申请日：1998-07-22

申请人： Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V.

发明人： MÜHL, Thomas ,  REISS, Günter ,  BRÜCKL, Hubert

IPC分类号： G11B9/00 ,  G03F7/20 ,  G01N27/00

CPC分类号： G11B9/14 ,  G01Q80/00 ,  G11B9/1463 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31738 ,  H01L21/32131 ,  Y10S977/859

摘要： The invention relates to the production or treatment of semiconductor or other solid components, especially to a method for directly nano-structuring amorphous carbonlayers. According to the invention, a local, field-induced reaction is activated in the carbon with an electrically conductive or semiconducting probe. Said probe is positioned at a distance from the amorphous carbon layer or is passed over said amorphous carbon layer at a distance. The distance must be such that the electrical conduction mechanism 'field emission' or 'tunnelling' can still occur. An electrical voltage is applied to said probe in relation to the layer at the points where recesses are to be made in the layer or the layer is to be removed. This process alone produces the desired structure without any further technical steps. The inventive method can be used advantageously in the production of electronic components in the sub-νm and nm areas, and is particularly suitable in those fields for producing nano-structured etching masks whose structures have to be transferred onto layers placed beneath them. The method can also be used advantageously for entering information into amorphous carbon layers for information storage.

公开(公告)号：EP1320117A3

公开(公告)日：2003-11-26

申请号：EP02027938.6

申请日：2002-12-13

申请人： Sony International (Europe) GmbH

发明人： Harnack, Oliver, c/o Ad. Tech. Center Stuttgart ,  Ford, William E., c/o Ad. Tech. Center Stuttgart ,  Wessels, Jurina, c/o Ad. Tech. Center Stuttgart ,  Yasuda, Akio, c/o Ad. Tech. Center Stuttgart

IPC分类号： H01J37/305

CPC分类号： B82Y10/00 ,  H01J37/3056 ,  H01J2237/31735 ,  H01J2237/3174

摘要： The invention relates to a method for defect (36) and conductivity engineering of a conducting nanoscaled structure (22) or at least one part of it by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focused electron beam on the nanoscaled structure or an individual portion (36) of it to be engineered and/or by applying one or multiple wires of the conducting nanoscaled structure by applying a current density J D,I whereas the current density J D,I has a value below a critical current density J C which is the current per cross-section area of the wire at which the wire fails due to overheating and electromigration, and not lower than 3 orders of magnitude below J C . The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.

摘要翻译： 本发明涉及通过产生纳米尺度结构的导电材料的热诱导迁移，熔化，溅射和/或蒸发的导电纳米尺度结构（22）或其至少一部分的缺陷（36）和电导率工程的方法 通过将聚焦的电子束引导到纳米尺度结构上或将要被工程化的单个部分（36）和/或通过施加电流密度JD，I施加导电纳米尺度结构的一条或多条线，而电流密度JD， 我的电流值低于临界电流密度JC，该电流是由于过热和电迁移导致电线故障的导线的每个横截面积的电流，并且不低于JC以下3个数量级。 本发明还涉及具有用于检测这种方法的背散射电子的滤波器的二次电子显微镜的使用以及具有用于检测反向散射电子的这种滤波器的二次电子显微镜。

公开(公告)号：EP1187121A2

公开(公告)日：2002-03-13

申请号：EP01121195.0

申请日：2001-09-04

申请人： Pioneer Corporation

发明人： Kumasaka, Osamu, Pioneer Corporation ,  Kuriyama, Kazumi, Pioneer Corporation ,  Kaneda, Hiroki, Pioneer Corporation ,  Sone, Masami, Pioneer Corporation ,  Kamimura, Kenji, Pioneer Corporation ,  Iwata, Takeharu, Pioneer Corporation ,  Kobayashi, Masaki, Pioneer Corporation

IPC分类号： G11B7/26

CPC分类号： F16C32/06 ,  B23Q1/38 ,  B23Q7/02 ,  B82Y10/00 ,  B82Y40/00 ,  F16C2322/39 ,  G11B7/26 ,  G11B7/261 ,  H01J37/3174 ,  H01J2237/31735 ,  H01L21/67242 ,  H01L21/6831

摘要： A master disc manufacturing apparatus includes an electron-beam emitting portion (40) for emitting an electron beam, an electron-beam converging portion for converging an electron beam, a retarding voltage applying portion (60) for applying a substrate with a negative potential having a magnitude of decelerating the electron beam, and a vacuum atmosphere producing portion for evacuating a chamber to produce a vacuum atmosphere therein.

公开(公告)号：EP1616224B1

公开(公告)日：2007-07-11

申请号：EP04729445.9

申请日：2004-04-26

申请人： Haute Ecole Arc NE-BE-JU

发明人： JACCARD, Samuel ,  MIKHAILOV, Serguei ,  MUNNIK, Frans

IPC分类号： G03F7/20 ,  H01J37/317

CPC分类号： B81C1/00492 ,  B81C2201/032 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/201 ,  H01J37/3174 ,  H01J2237/31735 ,  H01J2237/31755 ,  H01J2237/31774 ,  H01J2237/31796 ,  Y10S430/143

摘要： Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk of the material leaving the surface essentially untouched.

摘要翻译： 离子束光刻技术，其中如果合适的衬底，较高量的辐射能量沉积到本体中的预定区域。 通过选择辐射性质，其能量和照射参数可以在离开表面基本上不变的材料的主体中产生结构。

公开(公告)号：EP1187121A3

公开(公告)日：2007-05-09

申请号：EP01121195.0

申请日：2001-09-04

申请人： Pioneer Corporation

发明人： Kumasaka, Osamu, Pioneer Corporation ,  Kuriyama, Kazumi, Pioneer Corporation ,  Kaneda, Hiroki, Pioneer Corporation ,  Sone, Masami, Pioneer Corporation ,  Kamimura, Kenji, Pioneer Corporation ,  Iwata, Takeharu, Pioneer Corporation ,  Kobayashi, Masaki, Pioneer Corporation

IPC分类号： G11B7/26

CPC分类号： F16C32/06 ,  B23Q1/38 ,  B23Q7/02 ,  B82Y10/00 ,  B82Y40/00 ,  F16C2322/39 ,  G11B7/26 ,  G11B7/261 ,  H01J37/3174 ,  H01J2237/31735 ,  H01L21/67242 ,  H01L21/6831

摘要： A master disc manufacturing apparatus includes an electron-beam emitting portion (40) for emitting an electron beam, an electron-beam converging portion for converging an electron beam, a retarding voltage applying portion (60) for applying a substrate with a negative potential having a magnitude of decelerating the electron beam, and a vacuum atmosphere producing portion for evacuating a chamber to produce a vacuum atmosphere therein.

摘要翻译： 甲母盘制造装置，具有在电子束发射在电子束电子束会聚部分用于会聚电子束用于与负电势施加具有在基板的发光部（40），阻滞电压施加部（60） 减速电子束的大小，并在真空气氛生产部分用于抽空的腔室，以在其中产生的真空的气氛。

公开(公告)号：EP1590825A2

公开(公告)日：2005-11-02

申请号：EP04704570.3

申请日：2004-01-23

申请人： NaWoTec GmbH

发明人： KOOPS, Hans, Wilfried, Peter

IPC分类号： H01J37/317

CPC分类号： H01J37/317 ,  H01J9/02 ,  H01J2237/1205 ,  H01J2237/31735

摘要： The invention relates to a method for producing corpuscular radiation systems (10-10 '', 12-12'), whereby at least one first corpuscular radiation system (10-10 '') is produced on a first substrate (14) by means of computer-controlled, corpuscular radiation-induced deposition, and at least one second corpuscular radiation system (12-12 ') is produced on at least one second substrate (16) by the at least one first corpuscular radiation system (10-10 '') by means of computer-controlled, corpuscular radiation-induced deposition. The inventive method can be used to produce a plurality of corpuscular radiation systems in a relatively short space of time.

公开(公告)号：EP1320117A2

公开(公告)日：2003-06-18

申请号：EP02027938.6

申请日：2002-12-13

申请人： Sony International (Europe) GmbH

发明人： Harnack, Oliver, c/o Ad. Tech. Center Stuttgart ,  Ford, William E., c/o Ad. Tech. Center Stuttgart ,  Wessels, Jurina, c/o Ad. Tech. Center Stuttgart ,  Yasuda, Akio, c/o Ad. Tech. Center Stuttgart

IPC分类号： H01J37/305

CPC分类号： B82Y10/00 ,  H01J37/3056 ,  H01J2237/31735 ,  H01J2237/3174

摘要： The invention relates to a method for defect (36) and conductivity engineering of a conducting nanoscaled structure (22) or at least one part of it by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focused electron beam on the nanoscaled structure or an individual portion (36) of it to be engineered and/or by applying one or multiple wires of the conducting nanoscaled structure by applying a current density J D,I whereas the current density J D,I has a value below a critical current density J C which is the current per cross-section area of the wire at which the wire fails due to overheating and electromigration, and not lower than 3 orders of magnitude below J C . The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.

摘要翻译： 本发明涉及一种通过产生纳米级结构的导热材料的热诱导迁移，熔化，溅射和/或蒸发来对导电纳米级结构（22）或其至少一部分进行缺陷（36）和导电工程的方法 通过将聚焦的电子束引导到纳米级结构或其单个部分（36）上进行工程设计和/或通过施加电流密度JD，I施加导电纳米级结构的一根或多根导线，而电流密度JD， I的值低于临界电流密度JC，该临界电流密度JC是由于过热和电迁移引起的导线失效的导线每个横截面积的电流，并且不低于JC的3个数量级。 本发明还涉及具有用于这种方法的用于检测背散射电子的滤波器的二次电子显微镜和具有用于检测背散射电子的这种滤波器的相应二次电子显微镜的用途。

公开(公告)号：EP2027594A2

公开(公告)日：2009-02-25

申请号：EP06786767.1

申请日：2006-07-10

申请人： Nexgen Semi Holding, INC.

发明人： ZANI, Michael John ,  SCOTT, Jeffrey Winfield ,  BENNAHMIAS, Mark Joseph ,  MAYSE, Mark Anthony

IPC分类号： H01J37/302

CPC分类号： H01J37/3056 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0432 ,  H01J2237/047 ,  H01J2237/30472 ,  H01J2237/31713 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01J2237/3175 ,  H01J2237/31766 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/76267 ,  H01L21/84 ,  H01L27/0629 ,  H01L29/66462 ,  H01L29/66659 ,  Y10T428/24802 ,  Y10T428/24893

摘要： A chamber (102 in Fig. 2) for exposing a workpiece to charged particles (101 in Fig. 2) includes a source, a collimator, a beam digitizer (230 in Fig. 2) downstream of the collimator configured to create a digital beam including groups of at least one charged particle (Fig. 3B and 5) by adjusting longitudinal spacing between the particles along the axis, a deflector (210 in Fig. 6A and 6B) downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.