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    MIT SIC BESCHICHTETE KÖRPER UND VERFAHREN ZUR HERSTELLUNG SIC-BESCHICHTETER KÖRPER
    2.
    发明公开
    MIT SIC BESCHICHTETE KÖRPER UND VERFAHREN ZUR HERSTELLUNG SIC-BESCHICHTETER KÖRPER 有权
    与SIC涂覆体，及其制造方法SIC-覆盖本体

    公开(公告)号：EP2414558A1

    公开(公告)日：2012-02-08

    申请号：EP10712725.0

    申请日：2010-03-17

    申请人： Spawnt Private S.à.r.l. ,  Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.

    发明人： ENDLER, Ingolf ,  HÖHN, Mandy ,  GEBEL, Thoralf ,  BAUCH, Christian ,  DELTSCHEW, Rumen ,  HOLL, Sven ,  LIPPOLD, Gerd ,  MOHSSENI-ALA, Seyed-Javad ,  AUNER, Norbert

    IPC分类号： C23C16/32 ,  C23C16/30

    CPC分类号： C23C16/325 ,  B32B18/00 ,  B82Y30/00 ,  C22C29/065 ,  C23C16/30 ,  Y10T428/264

    摘要： The invention relates to bodies, coated by a SiC hard material layer or by a layer system comprising at least one SiC hard material layer, and to a method for producing said type of coated bodies. The aim of the invention is to supply bodies with SiC layers that have a particle-free, non-porous structure, a high degree of hardness, low brittleness, high bond strength, good oxidation resistance and a high resistance to crack growth. According to the invention, the bodies are coated by a SiC layer or a multi-layer coating system comprising at least one SiC layer, wherein the SiC layer comprises nano-crystalline 3C-SiC comprising halogen or a mixed layer comprising nano-crystalline 3C-SiC comprising halogen and amorphous SiC or nano-crystalline 3C-SiC comprising halogen and amorphous carbon. The coating of said bodies is carried out in a thermal CVD process, wherein a gas mixture comprising H
    2 and/or one or more inert gases, one or more of the halogen polysilanes of the formulae Si
    n X
    2n , Si
    n X
    2n+2 , Si
    n X
    y H
    z , wherein X is the halogen and n ≥ 2 and one or more hydrocarbons is used. Alternatively according to the invention a gas mixture comprising one or more substituted halogen polysilanes having organic substitutes R of the general formulae Si
    n X
    y R
    z or Si
    n H
    x X
    y R
    z is used in H
    2 and/or one or more inert gases, wherein X is the halogen and n ≥ 2, z > 0, y ≥ 1. The stoichiometric ratios 2n+2 = y +z or 2n=y+z apply for Si
    n X
    y R
    z and the stochiometric ratios 2n+2 = x+y+z or 2n=x+y+z apply for Si
    n H
    x X
    y R
    z.