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2.发明授权Substrate having thin film of GaN joined thereon and method of fabricating the same 有权衬底施加在其上的GaN薄膜及其制造方法
公开(公告)号：EP1873817B1
公开(公告)日：2013-08-14
申请号：EP07011175.2
申请日：2007-06-06
IPC分类号： H01L21/18 , H01L33/00 , H01L21/762
CPC分类号： H01L22/26 , H01L21/187 , H01L21/76251 , H01L29/2003 , H01L29/66462 , H01L33/0075 , H01L2924/0002 , H01L2924/00
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公开(公告)号：EP2305860A2
公开(公告)日：2011-04-06
申请号：EP10164201.5
申请日：2010-05-28
发明人： Hachigo, Akihiro
CPC分类号： C30B33/00 , C30B29/406
摘要： A gallium nitride (GaN) substrate hard to break and capable of enhancing a production yield is provided. The GaN substrate comprises a primary surface. The primary surface is tilted at an angle in the range of 20 to 160 degrees with respect to the C-plane of the substrate. The substrate has a fracture toughness of more than or equal to 1.36 MN/m 3/2 .
摘要翻译： 提供了难以破坏并且能够提高产量的氮化镓（GaN）衬底。 GaN衬底包括主表面。 主表面相对于衬底的C平面以20至160度的范围内的角度倾斜。 基材具有大于或等于1.36MN / m3 / 2的断裂韧度。
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4.发明公开III-V compound semiconductor substrate manufacturing method 审中-公开Verfahren zur Herstellung eines III-V-Verbindungshalbleitersubstrats
公开(公告)号：EP1950800A2
公开(公告)日：2008-07-30
申请号：EP08000883.2
申请日：2008-01-17
IPC分类号： H01L21/306 , H01L21/02
CPC分类号： H01L21/02052 , C30B29/40 , C30B33/12 , H01L21/02019 , H01L21/02024 , H01L21/30621
摘要： Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S 7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step Sll), while second bias power lower than the first bias power is applied to the chuck 24.
摘要翻译： 提供能够提高基板PL强度的III-V族化合物半导体基板的制造方法。 在这样的III-V族化合物半导体基板的制造方法中，首先对晶片3的表面3a进行研磨（研磨工序）。 其次，清洗晶片3的表面3a（第一清洗步骤S7）。 接下来，对用于承载晶片3的卡盘24施加第一偏置电压，对晶片3的表面3a进行第一次干蚀刻，然后使用含卤素气体。随后，晶片3的表面3a 进行第二次干蚀刻，使用含卤素气体（第二干法蚀刻步骤S11），同时将低于第一偏压功率的第二偏压功率施加到卡盘24。
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5.发明公开Damage evaluation method and production method of compound semiconductor member 审中-公开用于确定所述损伤和用于制造化合物半导体构件的方法
公开(公告)号：EP1734357A2
公开(公告)日：2006-12-20
申请号：EP06009656.7
申请日：2006-05-10
IPC分类号： G01N21/21
CPC分类号： G01N21/211
摘要： Spectroscopic ellipsometry measurement is carried out on a surface 10a of a compound semiconductor substrate 10. In a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement, damage on the surface 10a of the compound semiconductor substrate 10 is evaluated using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor substrate.
摘要翻译： 椭圆偏振光谱法进行测量上的化合物半导体衬底10的一个面10a在通过椭圆偏振光谱法测定得到的光学常数的光谱，在化合物半导体基板10的面10a的损坏在波长使用频谱评估 含并列的波长对应于该化合物半导体衬底的能带隙。
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6.发明公开Damage evaluation method and production method of compound semiconductor member 审中-公开用于确定所述损伤和用于制造化合物半导体构件的方法
公开(公告)号：EP1734357A3
公开(公告)日：2011-11-30
申请号：EP06009656.7
申请日：2006-05-10
IPC分类号： G01N21/21
CPC分类号： G01N21/211
摘要： Spectroscopic ellipsometry measurement is carried out on a surface 10a of a compound semiconductor substrate 10. In a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement, damage on the surface 10a of the compound semiconductor substrate 10 is evaluated using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor substrate.
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公开(公告)号：EP1950800A3
公开(公告)日：2010-05-05
申请号：EP08000883.2
申请日：2008-01-17
IPC分类号： H01L21/02 , H01L21/306 , C30B29/40 , C30B33/12
CPC分类号： H01L21/02052 , C30B29/40 , C30B33/12 , H01L21/02019 , H01L21/02024 , H01L21/30621
摘要： Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (polishing step). Second, the surface 3a of the wafer 3 is cleaned (first cleaning step S 7). Next, the surface 3a of the wafer 3 is subjected to first dry-etching, employing a halogen-containing gas, while first bias voltage is applied to a chuck 24 for carrying the wafer 3. Subsequently, the surface 3a of the wafer 3 is subjected to second dry-etching, employing the halogen-containing gas (second dry-etching step Sll), while second bias power lower than the first bias power is applied to the chuck 24.
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8.发明公开Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same 有权衬底施加在其上的GaN薄膜制造及其方法以及基于GaN的半导体器件及其制造方法
公开(公告)号：EP1873817A3
公开(公告)日：2009-09-23
申请号：EP07011175.2
申请日：2007-06-06
IPC分类号： H01L21/18 , H01L33/00 , H01L21/762
CPC分类号： H01L22/26 , H01L21/187 , H01L21/76251 , H01L29/2003 , H01L29/66462 , H01L33/0075 , H01L2924/0002 , H01L2924/00
摘要： There is provided a method of producing a thin GaN film-joined substrate (1), including the steps of: joining on a GaN bulk crystalline body (10) a substrate (20) different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body (10) at a plane (10t) having a distance of at least 0.1 µm and at most 100 µm from an interface thereof with the substrate (20) different in type, to provide a thin film of GaN (10a) on the substrate (20) different in type, wherein the GaN bulk crystalline body (10) had a surface joined to the substrate (20) different in type, that has a maximum surface roughness Rmax of at most 20 µm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.
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9.发明公开Method of working nitride semiconductor crystal 审中-公开Verfahren zur Bearbeitung einem Substrat aus Nitrid-Halbleitermaterial
公开(公告)号：EP1736268A2
公开(公告)日：2006-12-27
申请号：EP06011947.6
申请日：2006-06-09
IPC分类号： B23H9/00 , H01L21/304
CPC分类号： H01L21/3043 , B23H7/02 , B23H9/00
摘要： In a method of working a crystal, when a nitride semiconductor crystal (1) is worked, voltage is applied between the nitride semiconductor crystal (1) and a tool electrode (3) to cause electrical discharge, so that the crystal is partially removed and worked by local heat generated by the electrical discharge.
摘要翻译： 在加工晶体的方法中，当氮化物半导体晶体（1）被加工时，在氮化物半导体晶体（1）和工具电极（3）之间施加电压以引起放电，从而部分地去除晶体， 由放电产生的局部热量加工。
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公开(公告)号：EP2305860A3
公开(公告)日：2011-07-13
申请号：EP10164201.5
申请日：2010-05-28
发明人： Hachigo, Akihiro
CPC分类号： C30B33/00 , C30B29/406
摘要： A gallium nitride (GaN) substrate hard to break and capable of enhancing a production yield is provided. The GaN substrate comprises a primary surface. The primary surface is tilted at an angle in the range of 20 to 160 degrees with respect to the C-plane of the substrate. The substrate has a fracture toughness of more than or equal to 1.36 MN/m 3/2 .
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