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1.发明授权Nitride crystal, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权Nitridekristal，一个Nitridekristal，半导体器件上的外延层和其制造方法
公开(公告)号：EP1736574B1
公开(公告)日：2016-08-31
申请号：EP06011946.8
申请日：2006-06-09
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes (1d) of the nitride crystal (1) obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes (1d) are satisfied, a uniform distortion at a surface layer (1a) of the crystal represented by a value of |d 1 - d 2 |/d 2 obtained from the plane spacing d 1 at the X-ray penetration depth of 0.3 µm and the plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 2.1 x 10 -3 . The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
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2.发明公开Nitride crystal, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same 有权Nitridekristal，表演者Schicht auf einem Nitridekristal，Halbleiterbauelement und sein Herstellungsverfahren
公开(公告)号：EP1736574A1
公开(公告)日：2006-12-27
申请号：EP06011946.8
申请日：2006-06-09
CPC分类号： G01N23/207 , C30B25/186 , C30B25/20 , C30B29/38 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , G01B15/08 , G01N2223/602 , G01N2223/634 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L22/12 , H01L29/04 , H01L29/045 , H01L29/2003 , Y10T428/2978
摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes (1d) of the nitride crystal (1) obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes (1d) are satisfied, a uniform distortion at a surface layer (1a) of the crystal represented by a value of |d 1 - d 2 |/d 2 obtained from the plane spacing d 1 at the X-ray penetration depth of 0.3 µm and the plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 2.1 x 10 -3 . The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.
摘要翻译： 氮化物晶体的特征在于，与通过X射线衍射测量获得的氮化物晶体（1）的任意特定平行晶格面（1d）的平面间隔相关联，其中X射线衍射测量的X射线穿透深度从 在满足特定平行晶格面（1d）的X射线衍射条件下的晶体，获得的值由| d 1 -d 2 | / d 2表示的晶体的表面层（1a）的均匀失真 在X射线穿透深度为0.3μm的平面间距d 1和5μm的X射线穿透深度处的平面间隔d 2等于或低于2.1×10 -3。 上述结构提供了具有直接可靠评估的晶体表面层的氮化物晶体，而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，外延层 - 含氮化物晶体基板，半导体装置及其制造方法。
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