公开(公告)号：EP1158268B1

公开(公告)日：2006-04-19

申请号：EP01112507.7

申请日：2001-05-23

申请人： WIELAND-WERKE AG

发明人：

IPC分类号： G01B15/08 ,  F28F13/18

CPC分类号： G01B15/08 ,  F28F13/18

公开(公告)号：EP3155365A1

公开(公告)日：2017-04-19

申请号：EP15730648.1

申请日：2015-06-10

申请人： Hexagon Metrology, Inc

发明人： FERRARI, Paul, A. ,  JUNG, Hyun, Kwon ,  MCKNIGHT, James, F.

IPC分类号： G01B11/26 ,  G01D5/34 ,  G01B5/012 ,  G01B7/012 ,  G01N29/22

CPC分类号： G01B5/012 ,  G01B7/012 ,  G01B11/007 ,  G01B15/08 ,  G01B17/08 ,  G01B21/047 ,  G01D5/34 ,  G01N29/225

摘要： An articulating probe for use with a coordinate measuring machine comprises an attachment portion, a measuring portion, and at least one articulating joint. The attachment portion can be configured for attachment to a coordinate measuring machine. The measuring portion can be configured to contact an object to be measured by the coordinate measuring machine. The at least one articulating joint can be configured to allow rotation between the attachment portion and the measuring portion. Further, the articulating joint can comprise an angular sensor configured to measure an angle of the joint.

摘要翻译： 用于与坐标测量机一起使用的铰接探头包括附接部分，测量部分和至少一个铰接接头。 附接部分可以构造成用于附接到坐标测量机。 测量部分可以被配置成通过坐标测量机接触被测物体。 所述至少一个铰接接头可构造成允许所述附接部分和所述测量部分之间的旋转。 此外，铰接接头可以包括构造成测量接头的角度的角度传感器。

公开(公告)号：EP1736574A1

公开(公告)日：2006-12-27

申请号：EP06011946.8

申请日：2006-06-09

申请人： Sumitomo Electric Industries, Ltd.

发明人： Ishibashi, Keiji ,  Kaji, Tokiko ,  Nakahata, Seiji ,  Nishiura, Takayuki

IPC分类号： C30B33/00 ,  C30B29/40 ,  C09K3/14 ,  B24B37/04 ,  G01N23/20

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes (1d) of the nitride crystal (1) obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes (1d) are satisfied, a uniform distortion at a surface layer (1a) of the crystal represented by a value of |d 1 - d 2 |/d 2 obtained from the plane spacing d 1 at the X-ray penetration depth of 0.3 µm and the plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 2.1 x 10 -3 . The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，与通过X射线衍射测量获得的氮化物晶体（1）的任意特定平行晶格面（1d）的平面间隔相关联，其中X射线衍射测量的X射线穿透深度从 在满足特定平行晶格面（1d）的X射线衍射条件下的晶体，获得的值由| d 1 -d 2 | / d 2表示的晶体的表面层（1a）的均匀失真 在X射线穿透深度为0.3μm的平面间距d 1和5μm的X射线穿透深度处的平面间隔d 2等于或低于2.1×10 -3。 上述结构提供了具有直接可靠评估的晶体表面层的氮化物晶体，而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底，外延层 - 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：EP3298393A1

公开(公告)日：2018-03-28

申请号：EP16725475.4

申请日：2016-05-20

申请人： IMS Messsysteme GmbH

发明人： EIZENHÖFER, Harald

IPC分类号： G01N23/20 ,  G01N23/04 ,  G01B15/02

CPC分类号： G01N23/20 ,  G01B15/08 ,  G01N2223/1016 ,  G01N2223/642

摘要： The invention relates to a method for characterizing the microstructure of a strip or sheet (8) of metal. The object of providing an improved method for characterizing the microstructure of a strip or sheet of metal is achieved by a method in which a surface area of the strip or sheet (8) is irradiated with x-radiation, wherein the x-radiation at least partially has a continuous spectrum in which the intensity of the x-radiation scattered by the strip or sheet (8) is measured in a spatially resolved manner so as to obtain a spatially resolved intensity pattern, and in which an output variable dependent on the measured intensity pattern is determined and output. The invention also relates to a device (2) for characterizing the microstructure of a strip or sheet (8) of metal, in particular for use in a method according to the invention, comprising at least one x-ray source (4), which is designed to irradiate a surface area of a strip or sheet (8), wherein the x-radiation has an at least partially continuous spectrum. The invention also relates to a metal processing installation, in particular a rolling train for rolling a strip or sheet (8) of metal.

公开(公告)号：EP1736574B1

公开(公告)日：2016-08-31

申请号：EP06011946.8

申请日：2006-06-09

申请人： Sumitomo Electric Industries, Ltd.

发明人： Ishibashi, Keiji ,  Kaji, Tokiko ,  Nakahata, Seiji ,  Nishiura, Takayuki

IPC分类号： C30B33/00 ,  C30B29/40 ,  C09K3/14 ,  B24B37/04 ,  G01N23/20 ,  H01L29/04 ,  H01L29/20

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes (1d) of the nitride crystal (1) obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes (1d) are satisfied, a uniform distortion at a surface layer (1a) of the crystal represented by a value of |d 1 - d 2 |/d 2 obtained from the plane spacing d 1 at the X-ray penetration depth of 0.3 µm and the plane spacing d 2 at the X-ray penetration depth of 5 µm is equal to or lower than 2.1 x 10 -3 . The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：EP2735366A4

公开(公告)日：2015-11-25

申请号：EP12815539

申请日：2012-01-17

申请人： LAMINAR CO LTD

发明人： HONG JONG PAL ,  LEE HEE WAN ,  LEE KYUNG WOO ,  CHO EUN JEONG

IPC分类号： B01J19/18 ,  B01J8/10 ,  B01J8/20 ,  B01J19/00 ,  B01J19/10 ,  G01B9/04 ,  G01B15/08 ,  H01M4/02 ,  H01M4/13

CPC分类号： B01J19/004 ,  B01J8/10 ,  B01J8/20 ,  B01J19/10 ,  B01J19/1812 ,  B01J19/1843 ,  B01J2208/00212 ,  B01J2208/00548 ,  B01J2219/00085 ,  B01J2219/00094 ,  B01J2219/00159 ,  B01J2219/00164 ,  B01J2219/00202 ,  B01J2219/00211 ,  B01J2219/00231 ,  G01B15/08 ,  H01M4/13

摘要： The present invention provides an all-in-one type continuous reactor for preparing a positive electrode active material for a lithium secondary battery, the continuous reactor comprising: a flange unit 12 provided at one side of a cylinder 10; at least one reactant inlet port 13 provided on the flange unit so as to communicate with the reaction chamber 11 and configured to introduce a reactant into the reaction chamber; a reaction product outlet port 14 provided at the other side of the cylinder 10 so as to communicate with the reaction chamber 11 and configured to discharge a reaction product from the reaction chamber; a plurality of extra ports 15 provided between the reactant inlet port 13 and the reaction product outlet port 14 so as to communicate with the reaction chamber 11; a temperature control unit 40 disposed between the inner circumferential surface and outer circumferential surface 10, the temperature control unit 40 comprising a ring-shaped refrigerant chamber 41 and a refrigerant filled in the refrigerant chamber; a pulverizing unit 50 provided in the reactant inlet port 13 and configured to pulverize particles of the reactant that is introduced through the reactant inlet port; a flow rate sensor 60 provided in at least one of the reactant inlet port 13, the reaction product outlet port 14 and the extra ports 15 and configured to sense the flow rate of the reactant; and a flow rate control unit 70 configured to control the flow rate of the reactant, which is introduced through the reactant inlet port 13, on the basis of flow rate data sensed by the flow rate sensor 60.

公开(公告)号：EP2735366A1

公开(公告)日：2014-05-28

申请号：EP12815539.7

申请日：2012-01-17

申请人： Laminar Co., Ltd.

发明人： HONG, Jong Pal ,  LEE, Hee Wan ,  LEE, Kyung Woo ,  CHO, Eun Jeong

IPC分类号： B01J19/18 ,  H01M4/02 ,  H01M4/13 ,  G01B9/04

CPC分类号： B01J19/004 ,  B01J8/10 ,  B01J8/20 ,  B01J19/10 ,  B01J19/1812 ,  B01J19/1843 ,  B01J2208/00212 ,  B01J2208/00548 ,  B01J2219/00085 ,  B01J2219/00094 ,  B01J2219/00159 ,  B01J2219/00164 ,  B01J2219/00202 ,  B01J2219/00211 ,  B01J2219/00231 ,  G01B15/08 ,  H01M4/13

摘要： The present invention provides an all-in-one type continuous reactor for preparing a positive electrode active material for a lithium secondary battery, the continuous reactor comprising: a flange unit 12 provided at one side of a cylinder 10; at least one reactant inlet port 13 provided on the flange unit so as to communicate with the reaction chamber 11 and configured to introduce a reactant into the reaction chamber; a reaction product outlet port 14 provided at the other side of the cylinder 10 so as to communicate with the reaction chamber 11 and configured to discharge a reaction product from the reaction chamber; a plurality of extra ports 15 provided between the reactant inlet port 13 and the reaction product outlet port 14 so as to communicate with the reaction chamber 11; a temperature control unit 40 disposed between the inner circumferential surface and outer circumferential surface 10, the temperature control unit 40 comprising a ring-shaped refrigerant chamber 41 and a refrigerant filled in the refrigerant chamber; a pulverizing unit 50 provided in the reactant inlet port 13 and configured to pulverize particles of the reactant that is introduced through the reactant inlet port; a flow rate sensor 60 provided in at least one of the reactant inlet port 13, the reaction product outlet port 14 and the extra ports 15 and configured to sense the flow rate of the reactant; and a flow rate control unit 70 configured to control the flow rate of the reactant, which is introduced through the reactant inlet port 13, on the basis of flow rate data sensed by the flow rate sensor 60.

摘要翻译： 本发明提供了用于制备正极活性物质的锂二次电池中，连续反应器，其包含的所有功能于一个型连续反应器：一个凸缘部12在汽缸10的一侧设置; 设置在凸缘部上的至少一个反应物入口端口13，以与反应室11和通信配置为引入的反应物进入反应室; 在气缸10的另一侧设置成与反应室11连通，并构造成排出从所述反应室的反应产物的反应产物出口14; 的反应物入口端口13和反应产物出口14以便与反应室11连通之间设置附加端口15多元; 的内表面和外周周面10a之间设置一个温度控制单元40，其包括一个环形腔室41的制冷剂和制冷剂的温度控制单元40中的填充在制冷剂室; 在反应物入口端口13设置和构造的粉碎单元50粉碎反应物的颗粒并通过反应物入口引入; 流量传感器60在反应物入口口13中的至少一种提供，所述反应产物出口端口14和额外的端口15，并且被配置为感测所述反应物的流速; 和流率控制单元70配置为控制所述反应物的流量，所有这一切是通过反应物入口口13推出，由流量传感器感测到的第60次的流率数据的基础上

公开(公告)号：EP1398774A3

公开(公告)日：2005-01-19

申请号：EP03255610.2

申请日：2003-09-09

申请人： Pioneer Corporation

发明人： Kojima, Yoshiaki, Corporate Research & Develop. ,  Kasono, Osamu, Corporate Research & Develop.

IPC分类号： G11B7/007 ,  G11B7/26 ,  G01B15/08

CPC分类号： G01B15/08 ,  G11B7/268

摘要： An optical disk 11 (sample) is laid on a sample moving unit 21 within a vacuum chamber 20. An electron beam radiating mechanism 30 radiates an electron beam to the optical disk 11 while moving the optical disk 11 at a constant speed. Electron detecting means 27 detects an electron from the optical disk 11. Thus, the track pitch is measured on the basis of a detected electron signal and a measured movement amount of the optical disk 11. Also, the electron beam radiating mechanism 30 is provided with a fast deflector 33 for averaging within a deflection area to measure the track pitch.

摘要翻译： 将光盘11（样品）放置在真空室20内的样品移动单元21上。电子束辐射机构30在以一定速度移动光盘11的同时向电子束11辐射电子束。 电子检测装置27检测来自光盘11的电子。因此，基于检测到的电子信号和测量的光盘11的移动量来测量轨道间距。此外，电子束辐射机构30设置有 用于在偏转区域内平均以测量轨道间距的快速偏转器33。

公开(公告)号：EP1398774A2

公开(公告)日：2004-03-17

申请号：EP03255610.2

申请日：2003-09-09

申请人： Pioneer Corporation

发明人： Kojima, Yoshiaki, Corporate Research & Develop. ,  Kasono, Osamu, Corporate Research & Develop.

IPC分类号： G11B7/007 ,  G11B7/26 ,  G01B15/08

CPC分类号： G01B15/08 ,  G11B7/268

摘要： An optical disk 11 (sample) is laid on a sample moving unit 21 within a vacuum chamber 20. An electron beam radiating mechanism 30 radiates an electron beam to the optical disk 11 while moving the optical disk 11 at a constant speed. Electron detecting means 27 detects an electron from the optical disk 11. Thus, the track pitch is measured on the basis of a detected electron signal and a measured movement amount of the optical disk 11. Also, the electron beam radiating mechanism 30 is provided with a fast deflector 33 for averaging within a deflection area to measure the track pitch.

摘要翻译： 将光盘11（样品）放置在真空室20内的样品移动单元21上。电子束辐射机构30在以一定速度移动光盘11的同时向电子束11辐射电子束。 电子检测装置27检测来自光盘11的电子。因此，基于检测到的电子信号和测量的光盘11的移动量来测量轨道间距。此外，电子束辐射机构30设置有 用于在偏转区域内平均以测量轨道间距的快速偏转器33。

公开(公告)号：EP1158268A3

公开(公告)日：2003-10-01

申请号：EP01112507.7

申请日：2001-05-23

申请人： Wieland-Werke AG

发明人：

IPC分类号： G01B15/08 ,  F28F13/18

CPC分类号： G01B15/08 ,  F28F13/18

摘要： Die Erfindung beschreibt ein Verfahren zur schnellen, integralen Charakterisierung der strukturierten Innen- und/oder Außenoberfläche von Wärmetauscherrohren mittels der Radar-Doppler-Spektroskopie. Die aus den Frequenzspektren zu bestimmenden Meßgrößen: Flächenintegral A, Mittelwert m und Varianz S (bzw. Standardabweichung σ = S) korrelieren direkt mit den geometrischen Kenngrößen der Strukturmorphologie. Sie erlauben unmittelbar Rückschlüsse auf die Wärmeübertragungseigenschaften (Verdampfungs-/Kondensationsleistung) der jeweiligen Struktur, insbes. sind zur wärmetechnischen Kennzeichnung keine gebrauchsfertigen Rohrmuster erforderlich (Fig 1).