公开(公告)号：EP1291928A2

公开(公告)日：2003-03-12

申请号：EP02017650.9

申请日：2002-08-06

申请人： Sumitomo Electric Industries, Ltd.

发明人： Ando, Koshi, Tottori University ,  Nakamura, Takao, Sumitomo Electric Industries Ltd

IPC分类号： H01L31/105 ,  H01L31/107 ,  H01L31/0296 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1832

摘要： A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn 1-x Mg x S y Se 1-y layer, an i-Zn 1-x Mg x S y Se 1-y layer, a p-Zn 1-x Mg x S y Se 1-y layer, a p-(ZnTe/ZnSe) m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode.
A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn 1 - x Mg x S y Se 1 - y layer, an i-Zn 1 - x Mg x S y Se 1 - y layer, a p-Zn 1 - x Mg x S y Se 1 - y layer, a p-(ZnTe/ZnSe) m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.

摘要翻译： 蓝紫色近紫外灯管光电二极管，暗电流小，可靠性高，使用寿命长。 针状光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn 1-x Mg x S y Se 1-y层，i-Zn 1 -x Mg x S y Se 1-y层，p-Zn 1-x Mg x S y Se 1-y层，p-（ZnTe / ZnSe）m SLE，p-ZnTe接触层，任选提供 抗反射膜和金属p电极。 蓝紫色近紫外线雪崩光电二极管，暗电流小，可靠性高，使用寿命长。 雪崩光电二极管具有金属n电极，n-ZnSe单晶衬底，任选添加的n-ZnSe缓冲层，n-Zn 1-x Mg x S y Se 1-y层，i-Zn 1 - x Mg x S y Se 1-y层，p-Zn 1-x Mg x S y Se 1-y层，p-（ZnTe / ZnSe）m SLE，p-ZnTe接触层，任选提供的抗反射 膜和金属p电极。 层状结构的上侧被蚀刻成台面形状并涂覆有绝缘膜。

公开(公告)号：EP1291928A3

公开(公告)日：2007-05-09

申请号：EP02017650.9

申请日：2002-08-06

申请人： Sumitomo Electric Industries, Ltd.

发明人： Ando, Koshi, Tottori University ,  Nakamura, Takao, Sumitomo Electric Industries Ltd

IPC分类号： H01L31/105 ,  H01L31/107 ,  H01L31/0296 ,  H01L31/0352

CPC分类号： B82Y20/00 ,  H01L31/02963 ,  H01L31/02966 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1832

摘要： A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn 1-x Mg x S y Se 1-y layer, an i-Zn 1-x Mg x S y Se 1-y layer, a p-Zn 1-x Mg x S y Se 1-y layer, a p-(ZnTe/ZnSe) m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode.
A blue-violet-near-ultraviolet avalanche photodiode with small dark current, high reliability and long lifetime. The avalanche photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an optionally added n-ZnSe buffer layer, an n-Zn 1 - x Mg x S y Se 1 - y layer, an i-Zn 1 - x Mg x S y Se 1 - y layer, a p-Zn 1 - x Mg x S y Se 1 - y layer, a p-(ZnTe/ZnSe) m SLE, a p-ZnTe contact layer, an optionally provided antireflection film and a metallic p-electrode. Upper sides of the layered structure are etched into a mesa-shape and coated with insulating films.