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1.发明授权
公开(公告)号：EP1428912B1
公开(公告)日：2014-11-05
申请号：EP04003550.3
申请日：1999-03-23
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2.发明公开Semiconductor crystal, and method and apparatus of production 有权Verfahren und Vorrichtung zur Herstellung eines Halbleiterkristalls
公开(公告)号：EP1895025A2
公开(公告)日：2008-03-05
申请号：EP07021740.1
申请日：1998-12-22
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus of producing a semiconductor crystal comprising a reactor tube having an open end in at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on a surface of the base, heat means arranged around said reactor tube in the atmosphere, a flange attached at said open end to seal said reactor tube and a crucible mounted in said reactor tube to store a material of said semiconductor crystal.
摘要翻译： 一种制造半导体晶体的装置，包括在至少一端侧具有开口端的反应器管，由选自碳化硅，氮化硅，氮化铝和氧化铝中的任何一种材料形成，或者由复合材料 具有选自碳化硅，氮化硅，氮化铝，氮化硼，氧化铝，氧化镁，莫来石和碳作为基底的任何一种材料的材料，并且在表面上形成有防氧化或气密的膜 的基座，围绕所述反应器管设置在大气中的加热装置，在所述开口端附接的凸缘以密封所述反应器管和安装在所述反应器管中的坩埚以存储所述半导体晶体的材料。
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公开(公告)号：EP1428912A9
公开(公告)日：2004-09-08
申请号：EP04003550.3
申请日：1999-03-23
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
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公开(公告)号：EP1939332A1
公开(公告)日：2008-07-02
申请号：EP08005885.2
申请日：1998-12-22
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： A semiconductor crystal comprising a compound semiconductor material, and having a diameter of at least 6 inches and an average dislocation density of not more than 1x10 4 cm -2 .
摘要翻译： 一种半导体晶体，包括化合物半导体材料，并具有至少6英寸的直径和不大于1×104cm-2的平均位错密度。
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5.发明授权
公开(公告)号：EP0947609B1
公开(公告)日：2004-02-18
申请号：EP99105861.1
申请日：1999-03-23
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公开(公告)号：EP1895025A3
公开(公告)日：2008-05-21
申请号：EP07021740.1
申请日：1998-12-22
CPC分类号： C30B15/00 , C30B11/00 , C30B29/42 , Y10S117/90 , Y10T117/1024 , Y10T117/1096
摘要： An apparatus of producing a semiconductor crystal comprising a reactor tube having an open end in at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on a surface of the base, heat means arranged around said reactor tube in the atmosphere, a flange attached at said open end to seal said reactor tube and a crucible mounted in said reactor tube to store a material of said semiconductor crystal.
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7.发明公开
公开(公告)号：EP1428912A3
公开(公告)日：2004-06-23
申请号：EP04003550.3
申请日：1998-03-25
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
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8.发明公开
公开(公告)号：EP1428912A2
公开(公告)日：2004-06-16
申请号：EP04003550.3
申请日：1998-03-25
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing a semiconductor raw material and a boron oxide based substance in a gas-impermeable airtight vessel and increasing a temperature of said airtight vessel to melt said raw material and said boron oxide based substance in said airtight vessel and thereby form a melted material from said raw material; and decreasing said temperature of said airtight vessel to solidify said melted material and thereby grow said compound semiconductor crystal containing a resultant content of said carbon, selecting a partial pressure of a carbon oxide gas, and making said carbon oxide gas coexistent with said melted material, so that said resultant content of said carbon is dependent on said selected partial pressure of said carbon oxide gas. With this method, a compound semiconductor crystal with a carbon concentration of 0.1 X 10 15 cm -3 to 20 X 10 15 cm -3 is also prepared in high reproducibility.
摘要翻译： 提供了制备化合物半导体晶体的方法，使化合物半导体晶体以高重现性掺杂有碳。 该方法包括以下步骤：在不透气的气密容器中密封半导体原料和氧化硼基物质，并升高所述气密容器的温度以熔化所述气密容器中的所述原料和所述氧化硼基物质，从而形成 来自所述原材料的熔融材料; 并降低所述气密容器的所述温度以固化所述熔融材料，由此使包含所得碳含量的所述化合物半导体晶体生长，选择碳氧化物气体的分压，并使所述碳氧化物气体与所述熔化材料共存， 使得所述碳的所述所得含量取决于所述选定的所述碳氧化物气体的分压。 利用该方法，还以高重复性制备碳浓度为0.1×1015cm-3至20×1015cm-3的化合物半导体晶体。
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9.发明公开Method of making GaN single crystal and apparatus for making GaN single crystal 审中-公开用于制造GaN单晶的方法和设备
公开(公告)号：EP0937790A3
公开(公告)日：2003-08-27
申请号：EP99101114.9
申请日：1999-01-21
CPC分类号： C30B29/406 , C30B23/002
摘要： An apparatus comprises a Ga-disposing section in which Ga is disposed; a seed-crystal-disposing section in which a seed crystal of GaN is disposed; a synthesis vessel adapted to accommodate the Ga-disposing section, the seed-crystal-disposing section, and a gas containing nitrogen; heating means adapted to heat the Ga-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Ga to an evaporation temperature of Ga or higher and heating the seed crystal to a temperature higher than that of the Ga, wherein the Ga evaporated by the heating means is adapted to react with the nitrogen of a nitrogen component in the gas so as to yield a GaN-forming gas, the GaN-forming gas being adapted to reach the seed-crystal-disposing section.
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10.发明公开Method of preparing a compound semiconductor crystal and compound semiconductor crystal 有权Verbindungshalbleiter-Kristall和Verfahren zu seiner Herstellung
公开(公告)号：EP0947609A3
公开(公告)日：2002-02-06
申请号：EP99105861.1
申请日：1999-03-23
摘要： There is provided a method of preparing a compound semiconductor crystal, allowing the compound semiconductor crystal to be doped with carbon in high reproducibility. The method includes the steps of sealing carbon oxide gas (7) of a predetermined partial pressure and compound semiconductor material (2) in gas-impermeable airtight vessel (8), increasing the temperature of vessel (8) to melt compound semiconductor material (2) sealed in vessel (8), and decreasing the temperature of vessel (8) to solidify melted compound semiconductor material (2) to grow a compound semiconductor crystal containing a predetermined amount of carbon. With this method, a compound semiconductor crystal with a carbon concentration of 0.1×10 15 cm -3 to 20×10 15 cm -3 is also prepared in high reproducibility.
摘要翻译： 提供了一种制备化合物半导体晶体的方法，允许化合物半导体晶体以高重现性掺杂碳。 该方法包括将半导体原料和氧化硼基物质密封在不透气密封容器中并增加所述气密容器的温度以将所述原料和所述氧化硼基物质熔化在所述气密容器中的步骤，从而形成 来自所述原料的熔融材料; 并降低所述气密容器的所述温度以使所述熔融材料固化，从而生长含有所述碳含量的化合物半导体晶体，选择碳氧化物气体的分压，并使所述碳氧化物气体与所述熔融材料共存， 使得所述碳的所得所得含量取决于所述选择的所述碳氧化物气体的分压。 通过该方法，也可以高重现性制备碳浓度为0.1×10 15 cm -3 -320℃×10 15 cm -3的化合物半导体晶体。
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