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1.发明公开
公开(公告)号：EP3356582A1
公开(公告)日：2018-08-08
申请号：EP16784623.7
申请日：2016-09-28
CPC分类号： H01L21/02527 , C01B32/184 , C30B25/18 , C30B25/183 , C30B29/02 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02392 , H01L21/02395 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0262 , H01L21/02658 , H01L29/1606
摘要： A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.
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公开(公告)号：EP4131339A2
公开(公告)日：2023-02-08
申请号：EP22197006.4
申请日：2017-04-28
摘要： A multilayer structure comprising:
a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer;
a layer comprising silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer;
a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride, the layer comprising hexagonal boron nitride being attached to the layer comprising silicon nitride by surface adsorption at active sites of the layer comprising silicon nitride; and
a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene and the layer comprising hexagonal boron nitride forming a van der Waals bound heterostructure.-
公开(公告)号：EP4131339A3
公开(公告)日：2023-02-15
申请号：EP22197006.4
申请日：2017-04-28
IPC分类号： H01L21/20
摘要： A multilayer structure comprising:
a single crystal semiconductor wafer comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor wafer and the other of which is a back surface of the single crystal semiconductor wafer, a circumferential edge joining the front and back surfaces of the single crystal semiconductor wafer, a central plane between the front surface and the back surface of the single crystal semiconductor wafer, and a bulk region between the front and back surfaces of the single crystal semiconductor wafer;
a layer comprising silicon nitride in interfacial contact with the front surface of the single crystal semiconductor wafer;
a layer comprising hexagonal boron nitride in interfacial contact with the layer comprising silicon nitride, the layer comprising hexagonal boron nitride being attached to the layer comprising silicon nitride by surface adsorption at active sites of the layer comprising silicon nitride; and
a layer comprising graphene in interfacial contact with the layer comprising hexagonal boron nitride, the layer comprising graphene and the layer comprising hexagonal boron nitride forming a van der Waals bound heterostructure.-
公开(公告)号：EP4131338A3
公开(公告)日：2023-02-15
申请号：EP22197005.6
申请日：2017-04-28
IPC分类号： H01L21/20
摘要： A method of forming a multilayer structure, the method comprising:
providing a silicon wafer, the silicon wafer comprising two major, generally parallel surfaces, one of which is a front surface of the silicon wafer and the other of which is a back surface of the silicon wafer, a circumferential edge joining the front and back surfaces of the silicon wafer, a central plane between the front surface and the back surface of the silicon wafer, and a bulk region between the front and back surfaces of the silicon wafer,
contacting the front surface of the silicon wafer with (i) a boron-containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or a nitrogen-containing vapor at a temperature sufficient to directly deposit a layer comprising hexagonal boron nitride in interfacial contact with the front surface of the silicon wafer, and
after the direct deposition of the hexagonal boron nitride layer, forming a metal film on the layer comprising hexagonal boron nitride, wherein the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, and further wherein the back metal film surface is in interfacial contact with the layer comprising hexagonal boron nitride to thereby prepare the multilayer structure comprising the metal film, the layer comprising hexagonal boron nitride, and the silicon wafer.-
公开(公告)号：EP4131338A2
公开(公告)日：2023-02-08
申请号：EP22197005.6
申请日：2017-04-28
IPC分类号： H01L21/20
摘要： A method of forming a multilayer structure, the method comprising:
providing a silicon wafer, the silicon wafer comprising two major, generally parallel surfaces, one of which is a front surface of the silicon wafer and the other of which is a back surface of the silicon wafer, a circumferential edge joining the front and back surfaces of the silicon wafer, a central plane between the front surface and the back surface of the silicon wafer, and a bulk region between the front and back surfaces of the silicon wafer,
contacting the front surface of the silicon wafer with (i) a boron-containing gas or a boron-containing vapor and (ii) a nitrogen-containing gas or a nitrogen-containing vapor at a temperature sufficient to directly deposit a layer comprising hexagonal boron nitride in interfacial contact with the front surface of the silicon wafer, and
after the direct deposition of the hexagonal boron nitride layer, forming a metal film on the layer comprising hexagonal boron nitride, wherein the metal film comprises a front metal film surface, a back metal film surface, and a bulk metal region between the front and back metal film surfaces, and further wherein the back metal film surface is in interfacial contact with the layer comprising hexagonal boron nitride to thereby prepare the multilayer structure comprising the metal film, the layer comprising hexagonal boron nitride, and the silicon wafer. -
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