公开(公告)号：EP3216053A4

公开(公告)日：2018-07-11

申请号：EP15857773

申请日：2015-11-06

申请人： TEXAS INSTRUMENTS INC

发明人： LOPEZ OSVALDO JORGE ,  NOQUIL JONATHAN ALMERIA ,  GREBS TOM ,  MOLLOY SIMON JOHN

IPC分类号： H01L23/485 ,  H01L21/50 ,  H01L23/13 ,  H01L23/14

CPC分类号： H01L23/147 ,  H01L21/481 ,  H01L21/4846 ,  H01L23/13 ,  H01L23/3738 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/06181 ,  H01L2224/32225 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1425 ,  H01L2924/15153 ,  H01L2924/157

摘要： A packaged transistor device (100) comprises a semiconductor chip (101) including a transistor with terminals distributed on the first and the opposite second chip side; and a slab (110) of low-grade silicon (l-g-Si) configured as a ridge (111) framing a depression including a recessed central area suitable to accommodate the chip, the ridge having a first surface in a first plane and the recessed central area having a second surface in a second plane spaced from the first plane by a depth (112) at least equal to the chip thickness, the ridge covered by device terminals (120; 121) connected to attachment pads in the central area having the terminals of the first chip side attached so that the terminals (103) of the opposite second chip side are co-planar with the device terminals on the slab ridge.