公开(公告)号：EP0634683B1

公开(公告)日：1999-04-14

申请号：EP94110822.7

申请日：1994-07-12

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： McDonald, T. Gus ,  Boysel, R. Mark

IPC: G02B26/02

CPC classification number: G02B6/3564 ,  G02B6/3512 ,  G02B6/3556 ,  G02B6/358 ,  G02B6/3582 ,  G02B6/3584 ,  G02B26/0841

公开(公告)号：EP0525763B1

公开(公告)日：1995-10-25

申请号：EP92112999.5

申请日：1992-07-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Boysel, R. Mark

IPC: H01J9/02 ,  H01J21/10

CPC classification number: H01J9/025 ,  H01J21/105

公开(公告)号：EP0525764B1

公开(公告)日：1995-11-02

申请号：EP92113000.1

申请日：1992-07-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Boysel, R. Mark

IPC: H01J9/02 ,  H01L21/52 ,  H01L23/02

CPC classification number: B81C1/00333 ,  B81C2203/0136 ,  H01J9/025

公开(公告)号：EP0568801A1

公开(公告)日：1993-11-10

申请号：EP93104644.5

申请日：1993-03-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Florence, James M. ,  Boysel, R. Mark

IPC: G02B26/08 ,  G09F9/37

CPC classification number: G09F9/372 ,  G02B26/0841 ,  G03H1/08 ,  G03H1/0841 ,  G03H1/2294 ,  G03H2001/0066 ,  G03H2001/085 ,  G03H2001/0858 ,  G03H2223/13 ,  G03H2225/24 ,  G03H2225/31 ,  G03H2225/32 ,  G03H2225/55 ,  G03H2240/41 ,  G03H2240/42

Abstract: A method for multiple phase light modulation, said method comprising providing a pixel (20) having at least two modulating elements (22),(24). The method further comprising addressing said at least two modulating elements (22), (24) whereby light incident on said addressed element undergoes discrete phase changes between addressable states. The method further comprises resolving light from said at least two modulating elements (22), (24), into a response having at least three unique phases. Other devices, systems and methods are also disclosed.

Abstract translation: 一种用于多相光调制方法的方法，所述包括：提供具有至少两个调制元件的像素（20），（22），（24）。 该方法还包括在所述寻址的至少两个调制元件（22），（24），由此入射到所述被寻址元件下进可寻址的状态之间的不连续的相位变化。 该方法还包括从所述解析的光的至少两个调制元件（22），（24）到一个响应具有至少三个独特的相。 因此其他设备，系统和方法游离缺失盘。

公开(公告)号：EP0568801B1

公开(公告)日：1997-06-18

申请号：EP93104644.5

申请日：1993-03-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Florence, James M. ,  Boysel, R. Mark

IPC: G02B26/08 ,  G09F9/37

CPC classification number: G09F9/372 ,  G02B26/0841 ,  G03H1/08 ,  G03H1/0841 ,  G03H1/2294 ,  G03H2001/0066 ,  G03H2001/085 ,  G03H2001/0858 ,  G03H2223/13 ,  G03H2225/24 ,  G03H2225/31 ,  G03H2225/32 ,  G03H2225/55 ,  G03H2240/41 ,  G03H2240/42

公开(公告)号：EP0525764A2

公开(公告)日：1993-02-03

申请号：EP92113000.1

申请日：1992-07-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Boysel, R. Mark

IPC: H01J9/02 ,  H01L21/52 ,  H01L23/02

CPC classification number: B81C1/00333 ,  B81C2203/0136 ,  H01J9/025

Abstract: A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34). The method of the present invention has application to produce vacuum micro- diodes and micro-triodes, micro-mass spectrometers, micro-light bulbs, and micro-thermocouple gages, as well as numerous other applications.

Abstract translation: 形成真空微腔用于在真空处理室包封微电子器件的方法，包括：形成在基底基板（30），一个微电子器件（14）的步骤。 接下来的步骤是，以覆盖微电子器件（14），在有机间隔：例如在具有突起的复数，检查作为星形形式（36）的形状光致抗蚀剂。 接下来的步骤是，以覆盖与金属层（24）的有机间隔和基板底座（30）象在金属层覆盖了所有的有机间隔的除了一预定数目的接近孔（34）的有机间隔。 接着，将有机间隔物通过进入孔（34）中除去，以使金属层（24）以在所述微电子器件（14）和金属层（24）之间的真空室（20）的壳。 下一个步骤是通过涂覆金属层（24）和封闭接入孔径（34），以密封真空腔室（20）。 本发明的方法可应用于产生真空微二极管和微三极管，微型质谱仪，微灯泡，和微热电偶计，以及许多其它应用。

公开(公告)号：EP0634683A1

公开(公告)日：1995-01-18

申请号：EP94110822.7

申请日：1994-07-12

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： McDonald, T. Gus ,  Boysel, R. Mark

IPC: G02B26/02

CPC classification number: G02B6/3564 ,  G02B6/3512 ,  G02B6/3556 ,  G02B6/358 ,  G02B6/3582 ,  G02B6/3584 ,  G02B26/0841

Abstract: An optical switching device with switch elements (224) similar to digital micromirror devices (DMD). The switching element (224) resides in a trench (216) between two elevated areas on the substrate (214a, 214b). Sending and receiving fibers (218a, 218b) face each other across the trench (216) with the switch element (224) between them. When the switch is ON, light travels through lenses (220a, 220b) in the trench (216) from one fiber (218b) to the other (218a). When the switch is flipped OFF, the element (224) is activated and blocks the light from the sending fiber (218b) by reflecting or absorbing the light from the sending fiber (218b). The switch is activated and possibly deactivated by addressing electrodes (226a, 226b) under the element (224), which deflects through an air gap towards the activated electrode (226b). For better deflection angles the posts can be arranged closer to one end of the element than the other. An alternate hinge architecture is also provided.

Abstract translation: 具有类似于数字微镜器件（DMD）的开关元件（224）的光开关器件。 开关元件（224）位于衬底（214a，214b）上的两个升高区域之间的沟槽（216）中。 发送和接收光纤（218a，218b）通过沟槽（216）彼此面对，其间具有开关元件（224）。 当开关接通时，光通过沟槽（216）中的透镜（220a，220b）从一根光纤（218b）传输到另一根光纤（218a）。 当开关断开时，元件（224）被激活并且通过反射或吸收来自发送光纤（218b）的光而阻挡来自发送光纤（218b）的光。 通过寻址元件（224）下方的寻址电极（226a，226b）来激活开关并且可能使其失活，所述电极（226）通过朝向激活电极（226b）的气隙偏转。 为了更好的偏转角度，可以将柱子布置得比另一端更靠近元件的一端。 还提供了另一种铰链结构。

公开(公告)号：EP0525764A3

公开(公告)日：1993-11-24

申请号：EP92113000.1

申请日：1992-07-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Boysel, R. Mark

IPC: H01J9/02 ,  H01L21/52 ,  H01L23/02

CPC classification number: B81C1/00333 ,  B81C2203/0136 ,  H01J9/025

Abstract: A method of forming a vacuum micro-chamber for encapsulating a microelectronics device in a vacuum processing chamber comprises the steps of forming a microelectronics device (14) on a substrate base (30). The next step is to cover microelectronics device (14) with an organic spacer such as photoresist in a form having a plurality of protrusions, such as a star shape form (36). The next step is to cover the organic spacer and substrate base (30) with the metal layer (24) so that the metal layer covers all of the organic spacer except for a predetermined number of access apertures (34) to the organic spacer. Next, the organic spacer is removed through access apertures (34) to cause metal layer (24) to form a shell over a vacuum chamber (20) between the microelectronics device (14) and metal layer (24). The next step is to seal vacuum chamber (20) by coating metal layer (24) and closing off access apertures (34). The method of the present invention has application to produce vacuum micro- diodes and micro-triodes, micro-mass spectrometers, micro-light bulbs, and micro-thermocouple gages, as well as numerous other applications.

公开(公告)号：EP0525763A1

公开(公告)日：1993-02-03

申请号：EP92112999.5

申请日：1992-07-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Boysel, R. Mark

IPC: H01J9/02 ,  H01J21/10

CPC classification number: H01J9/025 ,  H01J21/105

Abstract: A method for producing a vacuum microelectronics device (10) on a substrate (12) and insulating dielectric (14) first forms an electrode base (16) on the insulating dielectric (14). Next, electrode base (16) is covered with a first organic spacer (42) having an aperture (44) for exposing a portion of electrode base (16). Next, a metal layer (46) is applied over organic spacer (42) to form emitter (18) within aperture (44). After removal of organic spacer (42) and metal layer (46), a second organic spacer (44) and a grid material (20) are applied over emitter (18) and electrode base (16). Next, a third organic spacer (50) and an anode metal (22) with access apertures (34) and (36) are placed over the structure. After removing organic spacers (48) and (50), anode metal (22) is sealed with metal (26) to close off access apertures (34) and (36). The result is a vacuum microelectronics device (10) usable is a triode or diode.

Abstract translation: 在基板（12）和绝缘电介质（14）上制造真空微电子器件（10）的方法首先在绝缘电介质（14）上形成电极基体（16）。 接下来，电极基座（16）被具有用于暴露电极基座（16）的一部分的孔（44）的第一有机间隔物（42）覆盖。 接下来，将金属层（46）施加在有机间隔物（42）上以在孔（44）内形成发射器（18）。 在除去有机间隔物（42）和金属层（46）之后，将第二有机间隔物（44）和栅格材料（20）施加到发射极（18）和电极基底（16）上。 接下来，在结构上放置具有进入孔（34）和（36）的第三有机间隔物（50）和阳极金属（22）。 在去除有机间隔物（48）和（50）之后，阳极金属（22）用金属（26）密封以封闭进入孔（34）和（36）。 结果是可以使用三极管或二极管的真空微电子器件（10）。