摘要:
The present invention is to provide a solid solution semiconductor laser element material which can manufacture a laser element which oscillates within an inflated region of wavelength range of 0.4-8 µm, can vary wavelength and can be operable in the vicinity of a room temperature, more particularly to provide a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.
摘要:
The present invention relate to a solid solution semiconductor laser element material which can form a laser element which oscillates in an infrared region of wavelength 0.2-8 µm, varies wavelength and is operable in the vicinity of room temperature, particularly a laser element of a lattice-matching double hetero junction or lattice-matching quantum well structure. The disclosed solid state semiconductor is made of a material selected from a material having the general chemical formula