摘要:
A method of producing fine particles with a particle size of submicron or finer which comprises the steps of:
forming closely fine projections on a substrate surface, preferably by sputter-etching using an ionized gas; and then sputtering metallic or non-metallic materials onto the thus treated substrate in an inert gas or a mixed gas of an inert gas and a reactive gas, such as oxygen, the gas pressure of the inert gas or the mixed gas being in the range of from 1×10 -4 torr to 1×10 -1 torr, and thereby depositing the purposed fine particles in crystalline or amorphous form. The invention method can successfully provide fine particles with desired properties, for example, in size, shape and structure, by adjusting producing conditions or selection of substrate materials and the thus obtained fine particles are very useful in various applications with or without the substrate.
摘要:
A perpendicular magnetic recording medium is formed of a substrate having 5 x 10 5 - 5 x 10 9 fine projections per mm 2 on the surface thereof, said projections having heights in the range of 0.01 - 10 µm and diameters in the range of 0.01 -1 µm, and a ferromagnetic material deposited uniformly in a columnar form on the projections. The recording medium is produced by providing in advance fine projections, the heights and diameters of which are 0.01 - 10 µm and 0.01 - 1 µm respectively, on the surface of a substrate to a density of 5 x 10 5 - 5 x 10 9 projections per mm 2 , and then causing a ferromagnetic material to deposit on the substrate from a vapor phase in such a way that the deposited material is preferentially allowed to adhere onto the projections and then to grow the ferromagnetic material in a direction perpendicular to the plane of the substrate. The present invention has expanded the range of usable substrate-forming materials and recording materials, i.e., ferromagnetic materials, and has also simplified the production process.
摘要:
The present invention relates to a permanent magnet material of an alloy and a thin film consisting essentially of Pr and Co and inevitable impurities, and further consisting at least one element selected from the group consisting of B, C, Fe, Cu, W, Ti, Ce and Sm as a secondary component and a method of manufacturing the permanent magnet comprising compacting or injection molding, then heating and sintering, and an object of the invention is to provide a small-sized and strong permanent magnet material having extremely large coercive force. A permanent magnet material of a high coercive force Pr-Co alloy having coercive force of more than 80 kA/m, which alloy consists essentially of 15-30 at% of Pr, the remainder Co and inevitable impurities and as a secondary component at least one element selected from the group consisting of 0.1-8 at% of B, C, Fe, Cu and W and 0.1-5 at% of Ti, Ce and Sm, and a method of manufacturing the same, and a Pr-Co thin film magnet material and a method of manufacturing the same. The present invention is to provide a method of manufacturing a permanent magnet having a high coercive force and consisting of the same component which comprises compacting or injection molding of same alloy powder, and then heating and sintering, so as to provide a small-sized and strong permanent magnet material having extremely high coercive force.
摘要:
The present invention is to provide a solid solution semiconductor laser element material which can manufacture a laser element which oscillates within an inflated region of wavelength range of 0.4-8 µm, can vary wavelength and can be operable in the vicinity of a room temperature, more particularly to provide a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.
摘要:
The present invention relate to a solid solution semiconductor laser element material which can form a laser element which oscillates in an infrared region of wavelength 0.2-8 µm, varies wavelength and is operable in the vicinity of room temperature, particularly a laser element of a lattice-matching double hetero junction or lattice-matching quantum well structure. The disclosed solid state semiconductor is made of a material selected from a material having the general chemical formula