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公开(公告)号：EP0551089B1
公开(公告)日：1996-09-04
申请号：EP93100064.0
申请日：1993-01-05
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/30 , H01S5/32 , H01S5/3222 , H01S5/3223 , H01S5/327 , H01S5/3426 , H01S5/3427 , H01S5/347
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2.发明公开
公开(公告)号：EP1927169A2
公开(公告)日：2008-06-04
申请号：EP06802208.6
申请日：2006-08-23
发明人： CHEN, Yifan
CPC分类号： H01S5/0421 , B82Y20/00 , H01L33/26 , H01L33/34 , H01S5/021 , H01S5/3216 , H01S5/3402 , H01S5/3407 , H01S5/3427 , H01S5/4043
摘要： A light source is based on a combination of silicon and calcium fluoride (CaF2). The silicon and the calcium fluoride need not be pure, but may be doped, or even alloyed, to control their electrical and /or physical properties. Preferably the light source employs interleaved portions, e.g., arranged as a multilayer structure, of silicon (109) and calcium fluoride (107, 111 ) and operates using intersubband transitions in the conduction band so as to emit light in the near infrared spectral range. The light source may be arranged so as to form a quantum cascade laser, a ring resonator laser, a waveguide optical amplifier.
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3.发明公开Solid-solution semiconductor laser element material and laser element 失效Halbleiterlasermaterial aus einer festenLösungund Laservorrichtung。
公开(公告)号：EP0535594A1
公开(公告)日：1993-04-07
申请号：EP92116644.3
申请日：1992-09-29
CPC分类号： B82Y20/00 , H01L33/0091 , H01S5/32 , H01S5/3223 , H01S5/3427
摘要： The present invention is to provide a solid solution semiconductor laser element material which can manufacture a laser element which oscillates within an inflated region of wavelength range of 0.4-8 µm, can vary wavelength and can be operable in the vicinity of a room temperature, more particularly to provide a laser element having a lattice matching type double hetero-structure or lattice matching type quantum well structure.
摘要翻译： 本发明提供一种固体半导体激光元件材料，其可以制造在波长范围为0.4-8μm的充气区域内振荡的激光元件，可以改变波长并且可以在房间附近操作 更具体地说，提供具有晶格匹配型双异质结构或晶格匹配型量子阱结构的激光元件。
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4.发明授权SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD 有权半导体激光元件和半导体激光元件制造方法
公开(公告)号：EP2187488B1
公开(公告)日：2017-08-16
申请号：EP07806686.7
申请日：2007-09-04
IPC分类号： H01S5/16
CPC分类号： H01S5/164 , H01S5/0421 , H01S5/162 , H01S5/168 , H01S5/2072 , H01S5/3054 , H01S5/3223 , H01S5/3427
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5.发明公开SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD 有权HELLBLEITERLASERELEMENT UND HALBLEITERLASERELEMENT-HERSTELLUNGSVERFAHREN
公开(公告)号：EP2187488A4
公开(公告)日：2014-07-09
申请号：EP07806686
申请日：2007-09-04
IPC分类号： H01S5/16
CPC分类号： H01S5/164 , H01S5/0421 , H01S5/162 , H01S5/168 , H01S5/2072 , H01S5/3054 , H01S5/3223 , H01S5/3427
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公开(公告)号：EP1040527A2
公开(公告)日：2000-10-04
申请号：EP98966531.0
申请日：1998-12-11
发明人： MANTL, Siegfried , LENSSEN, Daniel , BAY, Helge
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01L31/032 , H01L31/103 , H01L31/105 , H01S5/32 , H01S5/3223 , H01S5/3224 , H01S5/3427 , H01S2304/00
摘要： A silicon-based, IC-compatible luminescent diode (LED) or laser diode (LD) has a light-emitting layer based on semiconductor ruthenium silicide (Ru2Si3) on silicon for the near infrared wavelength range around 1.5 νm. This component has an epitaxial Si/Ru2Si3Si or Si/Ru2Si3 heterostructure with band discontinuities of more than 0.05 eV for electrons or holes in order to achieve charge carrier confinement and thus an efficient light yield at room temperature.
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公开(公告)号：EP1952495B1
公开(公告)日：2017-12-06
申请号：EP06826799.6
申请日：2006-10-26
发明人： LIU, Jifeng , PAN, Dong , KIMERLING, Lionel, C. , MICHEL, Jurgen , SAINI, Sajan
CPC分类号： H01S5/3427 , B82Y20/00 , H01S5/3086 , H01S5/3223
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8.发明公开SEMICONDUCTOR LASER ELEMENT, AND SEMICONDUCTOR LASER ELEMENT MANUFACTURING METHOD 有权半导体激光元件和半导体激光元件的方法
公开(公告)号：EP2187488A1
公开(公告)日：2010-05-19
申请号：EP07806686.7
申请日：2007-09-04
IPC分类号： H01S5/16
CPC分类号： H01S5/164 , H01S5/0421 , H01S5/162 , H01S5/168 , H01S5/2072 , H01S5/3054 , H01S5/3223 , H01S5/3427
摘要： A semiconductor laser element 1 according to the present invention includes a window region 23 including a disordered portion formed by diffusion of a group-III vacancy, and a non-window region 24 including an active layer 15 of a quantum well structure, and has the disordered portion formed by providing on the window region 23 a promoting film that absorbs a predetermined atom and promotes the diffusion of group-III vacancy. An impurity that preferentially substitutes a group-V site is doped in a layer near the active layer 15, and a difference between an energy band gap in the window region and an energy band gap in the non-window region is equal to or larger than 50 meV.
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9.发明公开METHOD AND STRUCTURE OF GERMANIUM LASER ON SILICON 有权VERFAHREN UND STRUKTUR VON GERMANIUMLASER AUF SILICIUM
公开(公告)号：EP1952495A2
公开(公告)日：2008-08-06
申请号：EP06826799.6
申请日：2006-10-26
发明人： LIU, Jifeng , PAN, Dong , KIMERLING, Lionel, C. , MICHEL, Jurgen , SAINI, Sajan
IPC分类号： H01S5/32
CPC分类号： H01S5/3427 , B82Y20/00 , H01S5/3086 , H01S5/3223
摘要： A laser structure includes at least one active layer having doped Ge so as to produce light emissions at approximately 1550nm from the direct band gap of Ge. A first confinement structure is positioned on a top region of the at least one active layer. A second confinement structure is positioned on a bottom region the at least one active layer.
摘要翻译： 激光结构包括至少一个具有掺杂Ge的有源层，以便从Ge的直接带隙产生大约1550nm的光发射。 第一限制结构位于至少一个活性层的顶部区域上。 第二限制结构位于至少一个活性层的底部区域上。
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10.发明授权
公开(公告)号：EP0535594B1
公开(公告)日：1995-02-01
申请号：EP92116644.3
申请日：1992-09-29
CPC分类号： B82Y20/00 , H01L33/0091 , H01S5/32 , H01S5/3223 , H01S5/3427
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