公开(公告)号：EP1394844A1

公开(公告)日：2004-03-03

申请号：EP02730853.5

申请日：2002-05-31

申请人： TOKYO ELECTRON LIMITED

发明人： YOKOYAMA, Shin ,  NAKAJIMA, Anri ,  TADA, Yoshihide, TOKYO ELECTRON LIMITED ,  NAKAMURA, Genji, TOKYO ELECTRON LIMITED ,  IMAI, Masayuki ,  YONEKAWA, Tsukasa, TOKYO ELECTRON TOHOKU LIMITED

IPC分类号： H01L21/318 ,  C23C16/30

CPC分类号： H01L21/3185 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3211 ,  Y10S438/909

摘要： A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

摘要翻译： 提供了一种可以提高氮化硅膜或氮化物膜的表面的均匀性并提高生产效率的半导体器件的制造方法。 在硅衬底上形成作为氧化硅膜或氧氮化硅膜的第一膜的步骤，形成作为四氯硅烷单分子层的第二膜的工序，以及形成作为氮化硅的第三膜的工序 包括在第二膜上进行氮化处理的单分子层。 通过重复形成第二膜的步骤和形成第三膜的步骤预定次数来形成具有预定膜厚度的氮化硅膜。 在制造装置中，将多个硅基板配置在台阶状的舟舟上，从处理气体供给管朝向反应管的上侧供给处理气体。

公开(公告)号：EP1394844B1

公开(公告)日：2009-01-21

申请号：EP02730853.5

申请日：2002-05-31

申请人： TOKYO ELECTRON LIMITED

发明人： YOKOYAMA, Shin ,  NAKAJIMA, Anri ,  TADA, Yoshihide, TOKYO ELECTRON LIMITED ,  NAKAMURA, Genji, TOKYO ELECTRON LIMITED ,  IMAI, Masayuki ,  YONEKAWA, Tsukasa, TOKYO ELECTRON TOHOKU LIMITED

IPC分类号： H01L21/318 ,  C23C16/30

CPC分类号： H01L21/3185 ,  B82Y10/00 ,  B82Y30/00 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45546 ,  C23C16/56 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/3211 ,  Y10S438/909

摘要： A method of fabricating a semiconductor device, capable of improving the in-plane uniformity of a silicon nitride film or a silicon oxynitride film to be formed, and increasing a production efficiency at the film forming. The method comprises the steps of forming on a silicon substrate a first film consisting of a silicon oxide film or a silicon oxynitride film, forming a second film consisting of one tetrachlorosilane monomolecular layer, and nitriding the second film to form a third film consisting of one silicon nitride monomolecular layer. The second film forming step and the third film forming steps are repeated specified number of times to form a silicon nitride film of a specified film thickness. A fabrication device comprises a plurality of silicon substrates disposed on shelf-shaped wafer ports, a process gas being supplied toward above a reaction pipe from a process gas supply pipe.

摘要翻译： 一种制造半导体器件的方法，其能够改善待形成的氮化硅膜或氧氮化硅膜的面内均匀性，并提高成膜时的生产效率。 该方法包括以下步骤：在硅衬底上形成由氧化硅膜或氮氧化硅膜组成的第一膜，形成由一个四氯硅烷单分子层组成的第二膜，以及氮化第二膜以形成由一个 氮化硅单分子层。 重复第二成膜步骤和第三成膜步骤规定次数以形成特定膜厚的氮化硅膜。 一种制造装置包括设置在架状晶片端口上的多个硅衬底，工艺气体从工艺气体供应管朝向反应管上方供应。