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8 条记录 (耗时 0.013 秒)

    Capacitor and manufacturing method thereof
    2.
    发明公开
    Capacitor and manufacturing method thereof 审中-公开
    电容器及其制造方法

    公开(公告)号：EP1758152A3

    公开(公告)日：2007-12-05

    申请号：EP06017632.8

    申请日：2006-08-24

    申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  IBIDEN CO., LTD.

    发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

    IPC分类号： H01L21/02 ,  H01G4/12

    CPC分类号： H01L28/55

    摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

    摘要翻译： 处理装置（100）内的气氛例如通过气体供给源（112）等调整为氧气氛。 热处理设备（101）的内部设置为氧气氛并升高到预定温度。 然后，将形成有电介质前体层的晶片W的晶片舟（161）以晶片W中没有产生缺陷的速度装载到热处理装置（101）中。然后，热处理装置（101）的反应管的内部温度 升高至烘烤温度，进行预定时间的烘烤。 晶片W在热处理装置（101）中冷却至规定温度后，在处理装置（100）中冷却至室温，从处理装置（100）运出。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发温度的温度下维持预定的时间，并低于电介质前体层开始结晶以蒸发残留溶剂的温度。

    Capacitor and manufacturing method thereof
    4.
    发明公开
    Capacitor and manufacturing method thereof 审中-公开
    康德勒和德森Herstellungsverfahren

    公开(公告)号：EP1758152A2

    公开(公告)日：2007-02-28

    申请号：EP06017632.8

    申请日：2006-08-24

    申请人： TOKYO ELECTRON LIMITED ,  OCTEC INC. ,  JSR Corporation

    发明人： Yamanishi, Yoshiki ,  Harada, Muneo ,  Kitano, Takahiro ,  Kawaguchi, Tatsuzo ,  Hirota, Yoshihiro ,  Matsuda, Kenji ,  Yamada, Kinji ,  Shinoda, Tomotaka ,  Wang, Daohai ,  Okumura, Katsuya

    IPC分类号： H01L21/02 ,  H01G4/12

    CPC分类号： H01L28/55

    摘要： Atmosphere in processing apparatus (100) is adjusted to, for example, oxygen atmosphere, by gas supply source (112) and the like. Interior of thermal processing apparatus (101) is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat (161) containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus (101) at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus (101) has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus (101) and then to room temperature in processing apparatus (100), and carried out from processing apparatus (100). Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

    摘要翻译： 处理装置（100）中的气氛通过气体供给源（112）等调节为例如氧气氛。 将热处理装置（101）的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟皿161以晶片W中没有产生缺陷的速度被装载到热处理装置（101）中。此后，热处理装置（101）的反应管的内部温度 升温至烘烤温度，进行烘烤预定时间。 将晶片W在热处理装置（101）中冷却至规定温度，然后在处理装置（100）中冷却至室温，并从处理装置（100）进行。 在电介质前体层被烘烤之前，将其保持在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残余溶剂的温度的温度下的预定时间。

    Detection apparatus and method of physical variable
    6.
    发明公开
    Detection apparatus and method of physical variable 有权
    Frequenzdetektor

    公开(公告)号：EP1653771A1

    公开(公告)日：2006-05-03

    申请号：EP06000364.7

    申请日：1999-02-19

    申请人： TOKYO ELECTRON LIMITED

    发明人： Matsumoto, Toshiyuki ,  Hirota, Yoshihiro ,  Harada, Muneo ,  Miyano, Takaya

    IPC分类号： H04R15/02 ,  G01H11/06 ,  G01D5/241

    CPC分类号： G01D5/2417 ,  G01D5/24 ,  G01D5/2405 ,  G01H11/06 ,  H04R5/04

    摘要： An apparatus for detecting amplitudes of frequency components contained in a vibration signal, characterized in that the apparatus comprises: a resonator array (20) comprising: first and second diaphragms (21 and 22) and a transversal beam (23) connected between them through which a vibration signal transverses from the first to the second diaphragm (22), a plurality of lateral beams (24) extending from the transversal beam (23) have different lengths to have different vibration resonant frequencies, respectively; and a plurality of first electrodes (25) attached to the lateral beams (24) and a plurality of second electrodes (26) which are stationary, the respective pairs of electrodes (25 and 26) forming capacitance sensors, a capacitance each of which varies in response to distance between the electrodes (25 and 26); a plurality of oscillators (11), a plurality of counters (4) for counting outputs of the oscillators (11), and signal processing means (2) for processing the count values from the counters (4) to provide amplitudes of respective frequency components which are contained in the vibration signal applied to the first diaphragm (21).

    摘要翻译： 一种用于检测包含在振动信号中的频率分量的振幅的装置，其特征在于，所述装置包括：谐振器阵列（20），包括：第一和第二隔膜（21和22）和连接在它们之间的横向波束（23） 振动信号从第一隔膜（22）横向延伸，从横向波束（23）延伸的多个横梁（24）分别具有不同的长度以具有不同的振动共振频率; 和安装在横梁（24）上的多个第一电极（25）和固定的多个第二电极（26），各对电极（25和26）形成电容传感器，每个电容变化 响应于电极（25和26）之间的距离; 多个振荡器（11），用于计数振荡器（11）的输出的多个计数器（4）以及用于处理来自计数器（4）的计数值的信号处理装置（2），以提供各个频率分量 其被包含在施加到第一隔膜（21）的振动信号中。