公开(公告)号：EP1041613A4

公开(公告)日：2006-02-15

申请号：EP98961548

申请日：1998-12-25

申请人： TOKYO ELECTRON LTD

发明人： YAMADA MASAHIRO ,  ITO YOUBUN ,  INAZAWA KOUICHIRO

IPC分类号： C23F4/00 ,  H01L21/311 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/76804 ,  Y02C20/30 ,  Y02P70/605

摘要： A processing gas constituted of C5F8, O2 and Ar achieving a flow rate ratio of 1 ≤ C5F8 flow rate/O2 flow rate ≤ 1.625 is supplied into a processing chamber 102 of an etching apparatus 100 and the atmosphere pressure is set within a range of 45mTorr SIMILAR 50mTorr. High-frequency power is applied to a lower electrode 110 sustained within a temperature range of 20 DEG C SIMILAR 40 DEG C on which a wafer W is mounted to raise the processing gas to plasma, and using the plasma, a contact hole 210 is formed at an SiO2 film 208 on an SiNx film 206 formed at the wafer W. The use of C5F8 and O2 makes it possible to form a contact hole 210 achieving near-perfect verticality at the SiO2 film 208 and also improves the selection ratio of the SiO2 film 208 relative to the SiNx film 206. C5F8, which becomes decomposed over a short period of time when released into the atmosphere, does not induce the greenhouse effect.

摘要翻译： 将由C5F8，O2和Ar构成的处理气体，将流量比为1≤C5F8流量/ O2流量≤1.625的流量供给到蚀刻装置100的处理室102中，将气氛压力设定在45mTorr 类似于50mTorr。 将高频电力施加到在安装有晶片W的20℃，类似于40℃的温度范围内保持的下电极110，以将处理气体升高到等离子体，并且使用等离子体，形成接触孔210 在形成在晶片W上的SiNx膜206上的SiO 2膜208上。使用C5F8和O2使得可以形成在SiO 2膜208处实现接近完全垂直度的接触孔210，并且还改善了SiO 2膜的选择比 膜208相对于SiNx膜206.当释放到大气中时，在短时间内分解的C5F8不诱导温室效应。

公开(公告)号：EP1120822A4

公开(公告)日：2004-11-10

申请号：EP99940607

申请日：1999-09-01

申请人： TOKYO ELECTRON LTD

发明人： AKAHORI TAKASHI ,  INAZAWA KOUICHIRO ,  SENOO KOUJI ,  HAGIWARA MASAAKI

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76832 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/3127 ,  H01L21/31612 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76835 ,  H01L2221/1031 ,  H01L2221/1036

摘要： A semiconductor device using, e.g., a fluorine containing carbon film, as an interlayer dielectric film is produced by a dual damascene method which is a simple technique. After an dielectric film, e.g., an SiO2 film 3, is deposited on a substrate 2, the SiO2 film 3 is etched to form a via hole 31 therein, and then, a top dielectric film, e.g., a CF film 4, is deposited on the top face of the SiO2 film 3. If the CF film is deposited by activating a thin-film deposition material having a bad embedded material, e.g., C6F6 gas, as a plasma, the CF film 4 can be deposited on the top face of the SiO2 film 3 while inhibiting the CF film from being embedded into the via hole 31. Subsequently, by etching the CF film 4 to form a groove 41 therein, it is possible to easily produce a dual damascene shape wherein the groove 41 is integrated with the via hole 31.