摘要:
An electrode structure is provided for use in a plasma device that processes a workpiece (W) using a plasma in a process chamber (26) in a vacuum. An electrode (38) includes a heater (44). The electrode (38) is coupled to a cooling block (40) having a cooling jacket (58) for cooling the electrode. A heat-resistant metal sealant (66A, 66B) covers the electrode in a heat-transfer space (62, 64) formed between the electrode and the cooling block. Gas supply means (94) on the electrode side supplies a heat medium to the space (62, 64). Such an electrode structure maintains the electrode sealed in the space in a high temperature range above 200 DEG C, even at 350 to 500 DEG C, and prevents the gas leakage.
摘要:
A wafer stage (24) comprises a flat lower heater (38), upper and lower ceramic-metal members (40A, 40B) cooperating to sandwich the lower heater (38), and an electrostatic ceramic chuck (28) arranged on the upper side of the ceramic-metal member (40A) for holding a wafer (W) to be processed. The ceramic-metal member (40A) and the electrostatic chuck (28) have substantially the same coefficient of linear expansion so that the difference in deformation between the two will not cause separation or damage to the electrostatic chuck (28).