ELECTRODE, WAFER STAGE, PLASMA DEVICE, METHOD OF MANUFACTURING ELECTRODE AND WAFER STAGE
    2.
    发明公开
    ELECTRODE, WAFER STAGE, PLASMA DEVICE, METHOD OF MANUFACTURING ELECTRODE AND WAFER STAGE 有权
    电极,半导体盘承载体,制造方法铅和半导体片携载

    公开(公告)号:EP1193751A4

    公开(公告)日:2005-02-09

    申请号:EP00915374

    申请日:2000-04-06

    CPC分类号: H01L21/6831

    摘要: A wafer stage (24) comprises a flat lower heater (38), upper and lower ceramic-metal members (40A, 40B) cooperating to sandwich the lower heater (38), and an electrostatic ceramic chuck (28) arranged on the upper side of the ceramic-metal member (40A) for holding a wafer (W) to be processed. The ceramic-metal member (40A) and the electrostatic chuck (28) have substantially the same coefficient of linear expansion so that the difference in deformation between the two will not cause separation or damage to the electrostatic chuck (28).

    摘要翻译: 的基座24包括加热器38布置在平面状态,上部和下部的陶瓷 - 金属复合物40A和40B设置成从上面和下面夹住加热器38,以及用于吸引和保持物体的陶瓷静电卡盘28 被处理,W的静电吸盘在上陶瓷 - 金属复合40A的上表面接合到。 静电卡盘28具有近似线性的热膨胀系数相同象上陶瓷 - 金属复合材料40A的。 因此,剥落或由于在静电卡盘28和上部陶瓷 - 金属复合40A可以防止之间的热膨胀和收缩的差异在静电卡盘28的破裂。