专利检索 ap:("TOKYO ELECTRON LTD" OR "OHMI TADAHIRO") AND inv:"TAKAHASHI ICHIRO" 第 1 页

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发明公开
FERROELECTRIC FILM, SEMICONDUCTOR DEVICE, FERROELECTRIC FILM MANUFACTURING METHOD, AND FERROELECTRIC FILM MANUFACTURING APPARATUS 审中-公开
标题翻译： FERRO电热膜，半导体元件，FERRO电热膜方法和制造设备技术FERRO电热膜

公开(公告)号：EP1594142A4

公开(公告)日：2009-08-05

申请号：EP04707661

申请日：2004-02-03

申请人： TOKYO ELECTRON LTD , OHMI TADAHIRO

发明人： OHMI TADAHIRO , TAKAHASHI ICHIRO , YAMADA ATSUHIKO , SAKURAI HIROYUKI

IPC分类号： C23C14/06 , C01G35/00 , C23C14/08 , H01B3/00 , H01B3/12 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L29/788 , H01L29/792 , H01B19/00 , H01L27/10

CPC分类号： H01L21/31691 , C01G35/00 , C01G35/006 , C01P2006/42 , C23C14/088

摘要： The relative dielectric constant of a ferroelectric film of Sr2(Ta1-xNbx)O7 (0