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公开(公告)号：EP0890416A3
公开(公告)日：2002-09-11
申请号：EP98112800.2
申请日：1998-07-09
发明人： Inaba, Takao , Numoto, Minoru , Sakai, Kenji , Satoh, Manabu
CPC分类号： B24B37/013 , B24B37/005 , B24B49/04 , B24B49/06
摘要： Sensors (70,72) detect a stock removal of a wafer (50) during polishing, and a CPU (74) calculates the stock removal in accordance with information from the sensors(70,72). The CPU (74) compares the actual stock removal detected by the sensors (70,72) and a model stock removal stored in RAM (84), and determines timings for dressing and replacing said polishing pad (16) in accordance with a difference between the actual stock removal and the model stock removal. The determination results are shown on a display (82).
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公开(公告)号：EP0896859A3
公开(公告)日：2002-08-28
申请号：EP98115016.2
申请日：1998-08-10
发明人： Numoto, Minoru , Inaba, Takao , Terashita, Hisashi
CPC分类号： B24B37/30 , B24B49/16 , H01L21/302
摘要： The first air guide groove (92) is formed at the bottom of a carrier (24) along the inner circumference of a circle whose radius corresponds to the maximum radius of a wafer (50). The air is supplied to the outer periphery of the wafer (50) through the first air guide groove (92) to form a pressure air layer (51) between the carrier (24) and the wafer(50). The formation of the pressure air layer (51) makes the air pressure applied to the wafer (50) uniform on the entire surface of the wafer (50), and thus, the wafer (50) can be polished under a uniform pressure force. The second air guide groove (94) is formed along the inner circumference of a circle whose radius corresponds to the minimum radius of the wafer (50), and therefore, the wafer (50) with an orientation flat or notch can be polished under a uniform pressure force.
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公开(公告)号：EP0868975A1
公开(公告)日：1998-10-07
申请号：EP98106067.6
申请日：1998-04-02
IPC分类号： B24B37/04
摘要： The polishing apparatus (100) comprises a turn table (10), which polishes a semiconductor wafer (2), and a holding and pressing part (20), which holds and presses the semiconductor wafer (2) against a polishing surface (12a) of the turn table (10). The holding and pressing part (20) transmits a force from an air bag (62) to the semiconductor wafer (2) via a pressurized fluid layer (L) to thereby press the semiconductor wafer (2) against the polishing surface (12a) via the pressurized fluid layer (L), so that the semiconductor wafer (2) can be polished. Thereby, it is possible to uniformly polish the semiconductor wafer (2).
摘要翻译： 研磨装置（100）包括对半导体晶片（2）进行研磨的转台（10）和将半导体晶片（2）保持并按压在研磨面（12a）上的保持按压部（20） 的转台（10）。 保持按压部20经由加压流体层L将来自气囊62的力传递给半导体晶片2，从而经由加压流体层L将半导体晶片2按压在研磨面12a上， 加压流体层（L），从而可以抛光半导体晶片（2）。 由此，可以均匀地研磨半导体晶片（2）。
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公开(公告)号：EP0896859A2
公开(公告)日：1999-02-17
申请号：EP98115016.2
申请日：1998-08-10
发明人： Numoto, Minoru , Inaba, Takao , Terashita, Hisashi
CPC分类号： B24B37/30 , B24B49/16 , H01L21/302
摘要： The first air guide groove (92) is formed at the bottom of a carrier (24) along the inner circumference of a circle whose radius corresponds to the maximum radius of a wafer (50). The air is supplied to the outer periphery of the wafer (50) through the first air guide groove (92) to form a pressure air layer (51) between the carrier (24) and the wafer(50). The formation of the pressure air layer (51) makes the air pressure applied to the wafer (50) uniform on the entire surface of the wafer (50), and thus, the wafer (50) can be polished under a uniform pressure force. The second air guide groove (94) is formed along the inner circumference of a circle whose radius corresponds to the minimum radius of the wafer (50), and therefore, the wafer (50) with an orientation flat or notch can be polished under a uniform pressure force.
摘要翻译： 第一空气引导槽（92）沿圆周的内周形成在载体（24）的底部，圆的半径对应于晶片（50）的最大半径。 通过第一空气引导槽（92）将空气供给到晶片（50）的外周，在载体（24）和晶片（50）之间形成压力空气层（51）。 压力空气层（51）的形成使得在晶片（50）的整个表面上施加到晶片（50）的空气压力均匀，从而可以在均匀的压力下对晶片（50）进行抛光。 第二空气引导槽（94）沿着半径对应于晶片（50）的最小半径的圆的内圆周形成，因此，具有取向平面或凹口的晶片（50）可以在 均匀的压力。
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公开(公告)号：EP0890416A2
公开(公告)日：1999-01-13
申请号：EP98112800.2
申请日：1998-07-09
发明人： Inaba, Takao , Numoto, Minoru , Sakai, Kenji , Satoh, Manabu
CPC分类号： B24B37/013 , B24B37/005 , B24B49/04 , B24B49/06
摘要： Sensors (70,72) detect a stock removal of a wafer (50) during polishing, and a CPU (74) calculates the stock removal in accordance with information from the sensors(70,72). The CPU (74) compares the actual stock removal detected by the sensors (70,72) and a model stock removal stored in RAM (84), and determines timings for dressing and replacing said polishing pad (16) in accordance with a difference between the actual stock removal and the model stock removal. The determination results are shown on a display (82).
摘要翻译： 传感器（70,72）在抛光期间检测晶片（50）的库存移除，并且CPU（74）根据来自传感器（70,72）的信息计算库存移除。 CPU（74）比较由传感器（70,72）检测到的实际库存清除和存储在RAM（84）中的库存存货清除，并且根据第一存储器中的差异来确定修整和更换所述抛光垫（16）的定时 实际库存清除和样品库存清除。 确定结果显示在显示器（82）上。
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公开(公告)号：EP0896859B1
公开(公告)日：2004-04-14
申请号：EP98115016.2
申请日：1998-08-10
发明人： Numoto, Minoru , Inaba, Takao , Terashita, Hisashi
CPC分类号： B24B37/30 , B24B49/16 , H01L21/302
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公开(公告)号：EP0896858A1
公开(公告)日：1999-02-17
申请号：EP98114822.4
申请日：1998-08-06
IPC分类号： B24B37/04
摘要： A wafer (50) is polished while it is pressed against a polishing cloth (16) through a pressure air layer, and a polished surface adjustment ring (28) as well as the wafer (50) are pressed against the polishing cloth (16). The wafer (50) is polished in the state wherein a collapsing position of the polished surface adjustment ring (28) with respect to the polishing cloth (16) is set in such a way that the polishing pressure which is applied from the polishing cloth (16) to the wafer (50) can be constant.
摘要翻译： 抛光晶片（50），同时通过压力空气层压在抛光布（16）上，抛光表面调节环（28）以及晶片（50）被压在抛光布（16）上， 。 在抛光表面调节环（28）相对于抛光布（16）的塌缩位置被设置成使得从抛光布（...）施加的抛光压力 16）到晶片（50）可以是恒定的。
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