摘要:
Disclosed is a novel tantalum compound which enables to selectively form a tantalum-containing film which does not include a halogen or the like, or a tantalum-containing film which includes a desired element. Also disclosed are a method for producing such a tantalum compound, and a method for forming a tantalum-containing film which includes a desired element. Specifically disclosed is a tantalum compound represented by the general formula (1) or (2) below. [Chemical formula 1] (1) (In the formula (1), R 1 represents a straight-chain alkyl group having 2-6 carbon atoms.) [Chemical formula 2] (2) (In the formula (2), R 2 represents a straight-chain alkyl group having 2-6 carbon atoms.) Also specifically disclosed is a method for forming a tantalum-containing film by using a tantalum compound represented by the general formula (6) below as a raw material. [Chemical formula 3] (6) (In the formula (6), j, k, m and n respectively represent an integer of 1-4 satisfying j + k = 5 and m + n = 5; and R 3 -R 6 respectively represent a hydrogen atom, an alkyl group having 1-6 carbon atoms or the like.)
摘要:
The invention relates to novel titanium complexes which have excellent vaporization characteristics and thermal stability and are useful as raw material in forming titanium-containing thin films by CVD, ALD, or the like; a process for the production of the complexes; titanium-containing thin films formed by using the complexes; and a method for formation of the films. According to the invention, a titanium complex represented by the general formula (1) is produced by reacting a diimine represented by the general formula (2) with metallic lithium and then with a tetrakisamido complex represented by the general formula (3) and a titanium-containing thin film is formed by using the titanium complex as the raw material: [Chemical formula 1] (2) [Chemical formula 2] Ti(NR 5 R 6 ) 4 (3) [Chemical formula 3] (1) wherein R 1 and R 4 are each alkyl of 1 to 6 carbon atoms, or the like; R 2 and R 3 are each independently hydrogen, alkyl of 1 to 3 carbon atoms, or the like; and R 5 and R 6 are each independently alkyl of 1 to 4 carbon atoms, or the like.
摘要:
Provided is a compound useful for the manufacture of a Group 5 metal oxide film. The compound is a Group 5 metal oxo-alkoxo complex represented by general formula (A). A material solution for film formation purposes, which comprises the compound and an organic solvent, is prepared. A Group 5 metal oxide film can be manufactured using the material solution for film formation purposes. M±(µ4-O)²(µ3-O)³(µ-O)´(µ-ORA)µ(ORA)¶(RAOH)·X¸Y (A) (wherein M represents a niobium atom or the like; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group or the like; ± represents an integer of 3 to 10; ² represents an integer of 0 to 1; ³ represents an integer of 0 to 8; ´ represents an integer of 2 to 9; µ represents an integer of 0 to 6; ¶ represents an integer of 6 to 16; · represents an integer of 0 to 4; ¸ represents an integer of 0 to 2; and represents an integer of 0 to 6).
摘要:
An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.