公开(公告)号：EP2644755A4

公开(公告)日：2014-05-14

申请号：EP11843787

申请日：2011-11-21

申请人： TOYO TANSO CO

发明人： OKADA OSAMU ,  KAWAKAMI MASAAKI

IPC分类号： C30B15/10 ,  C04B35/83 ,  C30B15/14 ,  C30B29/06

CPC分类号： C30B15/14 ,  C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A single crystal pulling apparatus (1) has a quartz crucible (2) for accommodating silicon melt (3), a graphite crucible (4) for retaining the quartz crucible (2), a tray (5) for securing and holding the graphite crucible (4) from below, and a crucible rotating shaft (6) for supporting the tray (5) from below and for elevating and lowering the tray (5) and the crucibles (2), (4) while rotating them. A low heat conductive member (10) is interposed on a joint surface between the tray (5) and the crucible rotating shaft (6). The low heat conductive member (10) is formed in a substantially tubular shape, and is interposed in such a manner that a protruding portion of the crucible rotating shaft (6) is inserted through a center hole of the low heat conductive member (10). Thereby, a gap portion (11) is formed below a bottom portion of the tray (5).

公开(公告)号：EP0983981A4

公开(公告)日：2000-12-27

申请号：EP98911087

申请日：1998-03-30

申请人： TOYO TANSO CO

发明人： MATSUMOTO TAKASHI ,  KAWAKAMI MASAAKI

IPC分类号： B22D11/10 ,  B22D41/32 ,  C04B41/50 ,  C04B41/87 ,  B22D41/54

CPC分类号： C04B41/009 ,  B22D41/32 ,  C04B41/5059 ,  C04B41/87 ,  C04B2111/00353 ,  Y10T428/26 ,  Y10T428/30 ,  C04B41/0072 ,  C04B41/4517 ,  C04B41/4556 ,  C04B41/48 ,  C04B41/5001 ,  C04B41/5058 ,  C04B41/457 ,  C04B35/52

摘要： A carbon/silicon composite material wherein a silicon carbide containing carbon layer which is formed by silicon and boron carbide being penetrated from a surface of a carbon substrate into the inside thereof to allow the silicon and carbon of the carbon substrate to react with each other so as to be converted into silicon carbide and in which the silicon carbide is dispersed generally uniformly along a depth direction is formed on the carbon substrate as a first layer, the silicon carbide containing carbon layer having a thickness of not less than 1 mm.