公开(公告)号：EP1953124B1

公开(公告)日：2018-01-17

申请号：EP06821949.2

申请日：2006-10-12

申请人： Toyo Tanso Co., Ltd.

发明人： SAITO, Kiyoshi ,  YOKOYAMA, Fumiaki ,  SUZUKI, Hitoshi ,  ANDO, Atsuko ,  TOJO, Tetsuro ,  SHINOHARA, Seiji

IPC分类号： C01B32/20 ,  C04B35/52 ,  H01J37/317 ,  C04B35/532 ,  H01J37/16

CPC分类号： H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

摘要： The problem of the present invention is to provide, in high current - low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m 3 and an electric resistivity of not more than 9.5 µ©·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm -1 by G band intensity at 1570 cm -1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.

公开(公告)号：EP1953124A1

公开(公告)日：2008-08-06

申请号：EP06821949.2

申请日：2006-10-12

申请人： TOYO TANSO CO., LTD.

发明人： SAITO, Kiyoshi ,  YOKOYAMA, Fumiaki ,  SUZUKI, Hitoshi ,  ANDO, Atsuko ,  TOJO, Tetsuro ,  SHINOHARA, Seiji

IPC分类号： C04B35/52 ,  C01B31/04 ,  H01J37/317

CPC分类号： H01J37/3171 ,  C04B35/522 ,  C04B35/532 ,  C04B2235/5436 ,  C04B2235/656 ,  C04B2235/77 ,  H01J37/16 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

摘要： The problem of the present invention is to provide, in high current - low energy type ion implantation apparatuses, a graphite member for a beam line inner member of an ion implantation apparatus, which graphite member can markedly reduce particles incorporated in a wafer surface. This problem can be solved by the graphite member of the present invention, which is a graphite member for a beam line inner member of an ion implantation apparatus, which member having a bulk density of not less than 1.80 Mg/m 3 and an electric resistivity of not more than 9.5 µΩ·m. Preferably, the R value obtained by dividing D band intensity at 1370 cm -1 by G band intensity at 1570 cm -1 in the Raman spectrum of a spontaneous fracture surface of the graphite member is not more than 0.20.