公开(公告)号：EP4439739A1

公开(公告)日：2024-10-02

申请号：EP22895344.4

申请日：2022-10-24

Applicant: Toyo Tanso Co., Ltd. ,  The Doshisha

Inventor： INABA, Minoru ,  SHODAI, Yoshio

IPC: H01M4/90 ,  B01J23/42 ,  B01J35/10 ,  H01M4/96

CPC classification number: Y02E60/50 ,  B01J23/42 ,  H01M4/90 ,  H01M4/96 ,  B01J35/60 ,  H01M4/926 ,  C01B32/00 ,  H01M2008/109520130101 ,  H01M4/92

Abstract: Realized are a carbon support for a fuel cell catalyst and a catalyst for a fuel cell which have excellent durability and excellent catalytic activity when a catalyst metal is supported. A carbon support according to an embodiment of the present invention has diffraction peaks of a (002) plane which are observed at least at 2Θ = 22.5° to 25°, 26°, and 26.5° in an X-ray diffraction spectrum with CuKα rays, has an intensity ratio I(P1)/I(P2) between a peak P1 at 2Θ = 26° and a peak P2 at 2Θ = 26.5° of not less than 1.4, and has a BET specific surface area of not less than 1000 m2/g.

公开(公告)号：EP4331720A2

公开(公告)日：2024-03-06

申请号：EP24150330.9

申请日：2019-07-01

Applicant: Toyo Tanso Co., Ltd.

Inventor： ANZAI, Mizuho ,  MORISHITA, Takahiro ,  SHODAI, Yoshio

IPC: B01J20/28

Abstract: A method of producing a porous carbon for use as a catalyst support having a specific surface area of 500 m 2 /g or greater is provided, comprising: a first step of carbonizing a material containing a carbon source and a template source, to prepare a carbonized product; a second step of immersing the carbonized product into a template removing solution, to remove a template from the carbonized product; and a third step of heat treating the carbonized product from which the template has been removed, the method characterized by: controlling amount of functional groups that are present in the porous carbon, comprising changing type of the template removing solution or temperature of the heat treatment, wherein the template size is 3 nm to 30 nm.

公开(公告)号：EP4134359A1

公开(公告)日：2023-02-15

申请号：EP21784459.6

申请日：2021-04-09

Applicant: Toyo Tanso Co., Ltd.

Inventor： TOMITA, Syuhei ,  MACHINO, Hiroshi ,  NISHI, Yoko

IPC: C04B35/80 ,  C04B35/83 ,  C08J5/04 ,  F27D3/12

Abstract: Provided is a C/C composite having a long life in an environment including a heating process and a cooling process and having less adverse effects on surrounding facilities and the quality of treatment objects. A C/C composite in which, in measurement for open pores by mercury porosimetry, an open porosity for open pores with a radius of not less than 0.4 µm and less than 10 µm in the C/C composite is 2.0% or less.

公开(公告)号：EP4033519A1

公开(公告)日：2022-07-27

申请号：EP20864989.7

申请日：2020-06-18

Applicant: Hitachi, Ltd. ,  Toyo Tanso Co., Ltd.

Inventor： KOBAYASHI, Keisuke ,  KONISHI. Kumiko ,  SHIMA, Akio ,  YABUKI, Norihito ,  SUDOH, Yusuke ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC: H01L21/324 ,  H01L29/78 ,  H01L29/12 ,  H01L21/336

Abstract: To provide a technique capable of improving performance and reliability of a semiconductor device. An n - -type epitaxial layer (12) is formed on an n-type semiconductor substrate (11), and a p + -type body region (14), n + -type current spreading regions (16, 17), and a trench TR are formed in the n - -type epitaxial layer (12). A bottom surface B1 of the trench TR is located in the p + -type body region (14), a side surface S1 of the trench TR is in contact with the n + -type current spreading region (17), and a side surface S2 of the trench TR is in contact with the n + -type current spreading region (16). Here, a ratio of silicon is higher than a ratio of carbon in an upper surface T1 of the r - -type epitaxial layer (12), and the bottom surface B1, the side surface S1, and the side surface S2 of the trench. Furthermore, an angle θ1 at which the upper surface T1 of the n - -type epitaxial layer (12) is inclined with respect to the side surface S1 is smaller than an angle θ2 at which the upper surface T1 of the n - -type epitaxial layer (12) is inclined with respect to the side surface S2.

公开(公告)号：EP3863043A1

公开(公告)日：2021-08-11

申请号：EP19868808.7

申请日：2019-09-30

Applicant: Toyo Tanso Co., Ltd.

Inventor： IKEJIRI, Takahiro

IPC: H01L21/683 ,  C23C16/458 ,  H01L21/205

Abstract: Provided is a susceptor which enables improvement in yield of semiconductor chips produced from wafers, has a long life, and hardly causes chipping. The susceptor includes pockets (2) in which wafers (10) are to be placed, wherein at least one of the pockets (2) includes a plurality of supporting portions (3) for supporting the wafer (10), a plurality of contact portions (4) to make contact with a lateral surface (10a) of the wafer (10), and a plurality of non-contact portions (5) spaced from the lateral surface (10a) of the wafer (10). The contact portions (4) and the non-contact portions (5) are alternately provided in the inner peripheral wall of the pocket (2), and at least two of the supporting portions (3) are provided on lines extending from a center (O) of the pocket (2) to the non-contact portions (5) when the susceptor is viewed from above.

公开(公告)号：EP2439308B1

公开(公告)日：2020-05-06

申请号：EP10783292.5

申请日：2010-05-25

Applicant: Toyo Tanso Co., Ltd.

Inventor： ABE, Yoshihisa ,  WATANABE, Masanari ,  TAMURA, Osamu

IPC: C23C8/64

公开(公告)号：EP3605585A1

公开(公告)日：2020-02-05

申请号：EP18771381.3

申请日：2018-03-20

Applicant: Toyo Tanso Co., Ltd.

Inventor： TORIMI, Satoshi ,  SUDO, Yusuke ,  SHINOHARA, Masato ,  TERAMOTO, Youji ,  SAKAGUCHI, Takuya ,  NOGAMI, Satoru ,  KITABATAKE, Makoto

IPC: H01L21/205 ,  C30B29/36 ,  H01L21/20

Abstract: In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

公开(公告)号：EP2647736B1

公开(公告)日：2019-02-20

申请号：EP11844774.7

申请日：2011-07-06

Applicant: Toyo Tanso Co., Ltd.

Inventor： WATANABE, Masanari ,  ABE, Yoshihisa

IPC: C23C8/64

公开(公告)号：EP3076464B1

公开(公告)日：2019-01-02

申请号：EP14864290.3

申请日：2014-11-25

Applicant: National Institute of Technology ,  Toyo Tanso Co., Ltd.

Inventor： OKANO, Hiroshi ,  YODA, Masashi ,  TSURUOKA, Takuro ,  HOSOKAWA, Toshihiro ,  MISAKI, Nobuya

IPC: H01M4/46 ,  H01M4/86 ,  H01M4/96 ,  H01M12/06 ,  H01M8/0234

公开(公告)号：EP2858219B1

公开(公告)日：2018-12-05

申请号：EP13797737.7

申请日：2013-05-29

Applicant: Toyo Tanso Co., Ltd.

Inventor： TAKUMA, Masayuki

IPC: H02K13/00 ,  H01R39/22 ,  H01R39/26

CPC classification number: H01R39/22 ,  H01R39/26

Abstract: A carbon brush is provided that inhibits the temperature increase and the increase of rubbing noise that result from excessive formation of a commutator film. A carbon brush includes a carbon block substrate having pores in a surface thereof and an inner portion thereof, the carbon brush making sliding contact with a commutator provided in a motor. A suspension containing an oil and a petroleum-based solvent having a boiling point higher than a temperature of the carbon brush at a time of operation of the motor exists in the pores. It is desirable that the proportion of the suspension be from 0.5 weight % to 6 weight % with respect to the carbon block substrate.