公开(公告)号：EP2056339A4

公开(公告)日：2015-09-30

申请号：EP07792537

申请日：2007-08-15

申请人： TOYODA GOSEI KK

发明人： MIKI HISAYUKI ,  HANAWA KENZO ,  SASAKI YASUMASA

IPC分类号： H01L21/203 ,  C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L33/007 ,  C23C14/0036 ,  C23C14/0641 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm 2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.

公开(公告)号：EP2019437A4

公开(公告)日：2014-05-07

申请号：EP07743255

申请日：2007-05-08

申请人： TOYODA GOSEI KK

发明人： MIKI HISAYUKI ,  SAKAI HIROMITSU ,  HANAWA KENZO ,  YOKOYAMA YASUNORI ,  SASAKI YASUMASA ,  KAJI HIROAKI

IPC分类号： C23C14/06 ,  C23C14/34 ,  C23C16/02 ,  C23C16/30 ,  H01L21/203 ,  H01L21/205 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate. The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×10 3 to 1×10 5 crystals/µm 2 .