公开(公告)号：EP3467876A1

公开(公告)日：2019-04-10

申请号：EP18196700.1

申请日：2018-09-25

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： TOMITA, Hidemoto ,  UEDA, Hiroyuki ,  MORI, Tomohiko

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L29/20 ,  H01L29/08 ,  H01L21/336

摘要： A nitride semiconductor apparatus includes a nitride semiconductor layer (12), a gate insulating film (28), a source electrode (20), a drain electrode (30), and a gate electrode (26). The nitride semiconductor layer (12) includes a first body layer, a second body layer, a drift layer (44), a first source layer, and a second source layer. The drift layer (44) includes a first drift layer (46) that extends from a position in contact with a bottom surface of the first body layer to a position in contact with a bottom surface of the second body layer, and an electric field relaxation layer (48) that is in contact with a lower end portion of a side surface of the first body layer and a lower end portion of a side surface of the second body layer, is in contact with the first drift layer (46), and has a second conduction type impurity concentration lower than that of the first drift layer (46).