公开(公告)号：EP3467876A1

公开(公告)日：2019-04-10

申请号：EP18196700.1

申请日：2018-09-25

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： TOMITA, Hidemoto ,  UEDA, Hiroyuki ,  MORI, Tomohiko

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L29/20 ,  H01L29/08 ,  H01L21/336

摘要： A nitride semiconductor apparatus includes a nitride semiconductor layer (12), a gate insulating film (28), a source electrode (20), a drain electrode (30), and a gate electrode (26). The nitride semiconductor layer (12) includes a first body layer, a second body layer, a drift layer (44), a first source layer, and a second source layer. The drift layer (44) includes a first drift layer (46) that extends from a position in contact with a bottom surface of the first body layer to a position in contact with a bottom surface of the second body layer, and an electric field relaxation layer (48) that is in contact with a lower end portion of a side surface of the first body layer and a lower end portion of a side surface of the second body layer, is in contact with the first drift layer (46), and has a second conduction type impurity concentration lower than that of the first drift layer (46).

公开(公告)号：EP1815523B1

公开(公告)日：2016-09-14

申请号：EP05828962.0

申请日：2005-11-14

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa ,  KACHI, Tetsu

IPC分类号： H01L29/812 ,  H01L29/78 ,  H01L29/778 ,  H01L29/06 ,  H01L29/08 ,  H01L29/20 ,  H01L29/41

CPC分类号： H01L29/7802 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0843 ,  H01L29/0847 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/41 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/8122

摘要： A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a surface of the semiconductor base plate 32 and leaving a non-covered surface 55 at the surface of the semiconductor base plate 32, a semiconductor layer 50 covering a surface of the electric current regulation layer 42, and a source electrode 62 formed at a surface of the semiconductor layer 50. A drift region 56, a channel forming region 54, and a source region 52 are formed within the semiconductor layer 50. The drain electrode 22 is connected to a first terminal of a power source, and the source electrode 62 is connected to a second terminal of the power source. With this semiconductor layer 50, it is possible to increase withstand voltage or reduce the occurrence of current leakage.

公开(公告)号：EP1779438B2

公开(公告)日：2019-07-31

申请号：EP05755884.3

申请日：2005-06-22

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  KACHI, Tetsu ,  NAKANO, Yoshitaka ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa

IPC分类号： H01L29/778 ,  H01L21/335

公开(公告)号：EP3352203A1

公开(公告)日：2018-07-25

申请号：EP17206608.6

申请日：2017-12-12

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： YAMADA, Tetsuya ,  OKAWA, Takashi ,  MORI, Tomohiko ,  UEDA, Hiroyuki

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L21/0254 ,  H01L21/26546 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/308 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66522 ,  H01L29/66712 ,  H01L29/7395

摘要： A switching element (10) includes a semiconductor substrate (12) that includes a first n-type semiconductor layer (44), a p-type body layer (42) constituted by an epitaxial layer, and a second n-type semiconductor layer (40) separated from the first n-type semiconductor layer (44) by the body layer (42), a gate insulating film (28) that covers a range across the surface of the first n-type semiconductor layer (44), the surface of the body layer (42), and the surface of the second n-type semiconductor layer (40), and a gate electrode (26) that faces the body layer (42) through the gate insulating film (28). An interface (50) between the first n-type semiconductor layer (44) and the body layer (42) includes an inclined surfaces (52,63) and in the bottom of the body layer (42) a surface parallel with the upper surface (12a). The inclined surfaces (52,63) is inclined such that the depth of the body layer (42) increases as a distance from two opposite ends end (42a) of the body layer (42) increases in a horizontal direction towards the middle of the body layer. An inclined surface (52,63) is disposed below the gate electrode (26).

公开(公告)号：EP1842238B1

公开(公告)日：2010-07-21

申请号：EP06701454.8

申请日：2006-01-20

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  KACHI, Tetsu ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa

IPC分类号： H01L29/778 ,  H01L29/45 ,  H01L29/423 ,  H01L21/335 ,  H01L29/20

CPC分类号： H01L29/452 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

公开(公告)号：EP1842238A2

公开(公告)日：2007-10-10

申请号：EP06701454.8

申请日：2006-01-20

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： SUGIMOTO, Masahiro ,  KACHI, Tetsu ,  UESUGI, Tsutomu ,  UEDA, Hiroyuki ,  SOEJIMA, Narumasa

IPC分类号： H01L29/778

CPC分类号： H01L29/452 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor layer 28 made of n-type AlGaN, wherein the upper semiconductor layer 28 has a larger band gap than the lower semiconductor layer 26. The semiconductor device 10 further comprises a drain electrode 32 formed on a portion of a top surface of the upper semiconductor layer 28, a source electrode 34 formed on a different portion of the top surface of the upper semiconductor layer 28, and a gate electrode 36 electrically connected to the lower semiconductor layer 26. The semiconductor device 10 can operate as normally-off.