公开(公告)号：EP3467876A1

公开(公告)日：2019-04-10

申请号：EP18196700.1

申请日：2018-09-25

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： TOMITA, Hidemoto ,  UEDA, Hiroyuki ,  MORI, Tomohiko

IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L29/20 ,  H01L29/08 ,  H01L21/336

摘要： A nitride semiconductor apparatus includes a nitride semiconductor layer (12), a gate insulating film (28), a source electrode (20), a drain electrode (30), and a gate electrode (26). The nitride semiconductor layer (12) includes a first body layer, a second body layer, a drift layer (44), a first source layer, and a second source layer. The drift layer (44) includes a first drift layer (46) that extends from a position in contact with a bottom surface of the first body layer to a position in contact with a bottom surface of the second body layer, and an electric field relaxation layer (48) that is in contact with a lower end portion of a side surface of the first body layer and a lower end portion of a side surface of the second body layer, is in contact with the first drift layer (46), and has a second conduction type impurity concentration lower than that of the first drift layer (46).

公开(公告)号：EP3352203A1

公开(公告)日：2018-07-25

申请号：EP17206608.6

申请日：2017-12-12

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： YAMADA, Tetsuya ,  OKAWA, Takashi ,  MORI, Tomohiko ,  UEDA, Hiroyuki

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L21/0254 ,  H01L21/26546 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/308 ,  H01L21/76805 ,  H01L21/76895 ,  H01L23/535 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66333 ,  H01L29/66522 ,  H01L29/66712 ,  H01L29/7395

摘要： A switching element (10) includes a semiconductor substrate (12) that includes a first n-type semiconductor layer (44), a p-type body layer (42) constituted by an epitaxial layer, and a second n-type semiconductor layer (40) separated from the first n-type semiconductor layer (44) by the body layer (42), a gate insulating film (28) that covers a range across the surface of the first n-type semiconductor layer (44), the surface of the body layer (42), and the surface of the second n-type semiconductor layer (40), and a gate electrode (26) that faces the body layer (42) through the gate insulating film (28). An interface (50) between the first n-type semiconductor layer (44) and the body layer (42) includes an inclined surfaces (52,63) and in the bottom of the body layer (42) a surface parallel with the upper surface (12a). The inclined surfaces (52,63) is inclined such that the depth of the body layer (42) increases as a distance from two opposite ends end (42a) of the body layer (42) increases in a horizontal direction towards the middle of the body layer. An inclined surface (52,63) is disposed below the gate electrode (26).