公开(公告)号：EP0677878A3

公开(公告)日：1998-01-21

申请号：EP95101502.3

申请日：1995-02-03

申请人： TRW INC.

发明人： Tran, Liem Thanh ,  Streit, Dwight Christopher ,  Oki, Aaron Kenji

IPC分类号： H01L29/737 ,  H01L21/203 ,  H01L21/331

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L29/7371

摘要： This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is maintained. The fabrication of the HBT includes loading a semi-insulating substrate into an molecular beam epitaxy machine, and growing a sub-collector contact layer, a bottom collector layer and a top collector layer on the substrate. Next, the substrate is removed from the molecular beam epitaxy machine and the top collector layer is etched by a photolithographic process to produce separate intrinsic and extrinsic collector regions. Then, the substrate is again loaded into the molecular beam epitaxy machine so that the base and emitter layers can be grown. And finally, the emitter layer is etched to form an emitter mesa only over the intrinsic semiconductor region.

公开(公告)号：EP0677878A2

公开(公告)日：1995-10-18

申请号：EP95101502.3

申请日：1995-02-03

申请人： TRW INC.

发明人： Tran, Liem Thanh ,  Streit, Dwight Christopher ,  Oki, Aaron Kenji

IPC分类号： H01L29/737 ,  H01L21/203 ,  H01L21/331

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L29/7371

摘要： This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is maintained. The fabrication of the HBT includes loading a semi-insulating substrate into an molecular beam epitaxy machine, and growing a sub-collector contact layer, a bottom collector layer and a top collector layer on the substrate. Next, the substrate is removed from the molecular beam epitaxy machine and the top collector layer is etched by a photolithographic process to produce separate intrinsic and extrinsic collector regions. Then, the substrate is again loaded into the molecular beam epitaxy machine so that the base and emitter layers can be grown. And finally, the emitter layer is etched to form an emitter mesa only over the intrinsic semiconductor region.

摘要翻译： 本发明公开了一种异质结双极晶体管（HBT），其包括相对薄的本征集电极区域和相对较厚的非本征集电极区域，使得集电极 - 基极电容减小并保持电子传播时间。 HBT的制造包括将半绝缘衬底加载到分子束外延机中，并在衬底上生长副集电极接触层，底部集电极层和顶部集电极层。 接下来，从分子束外延机器去除衬底，并通过光刻工艺蚀刻顶部集电极层，以产生分立的本征和外部集电极区域。 然后，将衬底再次加载到分子束外延机中，使得可以生长基极和发射极层。 最后，蚀刻发射极层，仅在本征半导体区域上形成发射极台面。