Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices
    1.
    发明公开
    Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices 有权
    集成Amorfes Silizium Sende- und Empfang Strukturen mit GaAs oder InP hergestellte Vorrichtungen

    公开(公告)号:EP1284531A2

    公开(公告)日:2003-02-19

    申请号:EP02014126.3

    申请日:2002-06-24

    申请人: TRW Inc.

    IPC分类号: H01S5/026 H01S5/183 H01L27/15

    摘要: A device and a process for integrating light energy transmit and/or receive functions with active devices such as GaAs or InP devices or light emitting devices, such as lasers. The device and process includes forming a passivation layer on top of the active device and forming a silicon photodetector on top of the passivation layer. The photodetector may be formed utilizing a standard solar cell growth process and may be formed as a mesa on top of the active or light-emitting device, thus forming a relatively less complicated semiconductor with an integrated monitoring device.

    摘要翻译: 用于将光能发射和/或接收功能与诸如GaAs或InP器件的有源器件或诸如激光器的发光器件集成的器件和过程。 该器件和工艺包括在有源器件的顶部形成钝化层,并在钝化层顶部形成硅光电检测器。 光电检测器可以利用标准的太阳能电池生长工艺形成,并且可以在有源或发光器件的顶部形成为台面,由此形成具有集成监视器件的相对较不复杂的半导体。