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    SEMICONDUCTOR LASER ELEMENT
    1.
    发明授权
    SEMICONDUCTOR LASER ELEMENT 有权
    半导体激光元件

    公开(公告)号：EP1406360B1

    公开(公告)日：2010-11-03

    申请号：EP02733264.2

    申请日：2002-05-31

    申请人： Nichia Corporation

    发明人： SUGIMOTO, Yasunobu, ,  OCHIAI, Masanao, ,  YONEDA, Akinori,

    IPC分类号： H01S5/10

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1082 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2301/18

    摘要： A semiconductor laser element which can provide a good FFP free from ripple and close to a Gaussian distribution, and which is provided with a laminate structure that is formed by sequentially laminating a first conductive type semiconductor layer, an active layer, and a second conductive type (different from the first conductive type) semiconductor layer and that has a waveguide area for guiding light in one direction and a laser-resonating resonator surfaces at the opposite ends thereof, wherein the laminate structure has at one end thereof a non-resonator surface separate from the resonator surfaces and formed so as to include an active layer sectional surface, and the active layer sectional surface of the non-resonator surface is covered with a light shielding layer.

    摘要翻译： 本发明提供一种半导体激光元件，该半导体激光元件能够提供没有波纹并且接近高斯分布的良好的FFP，并且设置有层叠结构，该层叠结构通过依次层叠第一导电型半导体层，有源层和第二导电型层 （不同于第一导电类型）半导体层，并且具有用于沿一个方向引导光的波导区域和在其相对端处的激光谐振谐振器表面，其中该层叠结构在其一端具有非谐振器表面分离 从谐振器表面形成并且形成为包括有源层截面，并且非谐振器表面的有源层截面表面被遮光层覆盖。

    Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices
    3.
    发明公开
    Integration of amorphorous silicon transmit and receive structures with GaAs or InP processed devices 有权
    集成Amorfes Silizium Sende- und Empfang Strukturen mit GaAs oder InP hergestellte Vorrichtungen

    公开(公告)号：EP1284531A2

    公开(公告)日：2003-02-19

    申请号：EP02014126.3

    申请日：2002-06-24

    申请人： TRW Inc.

    发明人： Tran, Dean (NMI) ,  Anderson, Eric R. ,  Vendura, George J.

    IPC分类号： H01S5/026 ,  H01S5/183 ,  H01L27/15

    CPC分类号： H01S5/0264 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0286 ,  H01S5/18305 ,  H01S5/3031

    摘要： A device and a process for integrating light energy transmit and/or receive functions with active devices such as GaAs or InP devices or light emitting devices, such as lasers. The device and process includes forming a passivation layer on top of the active device and forming a silicon photodetector on top of the passivation layer. The photodetector may be formed utilizing a standard solar cell growth process and may be formed as a mesa on top of the active or light-emitting device, thus forming a relatively less complicated semiconductor with an integrated monitoring device.

    摘要翻译： 用于将光能发射和/或接收功能与诸如GaAs或InP器件的有源器件或诸如激光器的发光器件集成的器件和过程。 该器件和工艺包括在有源器件的顶部形成钝化层，并在钝化层顶部形成硅光电检测器。 光电检测器可以利用标准的太阳能电池生长工艺形成，并且可以在有源或发光器件的顶部形成为台面，由此形成具有集成监视器件的相对较不复杂的半导体。

    Semiconductor light emitting device and its manufacturing method
    5.
    发明公开
    Semiconductor light emitting device and its manufacturing method 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：EP0966077A2

    公开(公告)日：1999-12-22

    申请号：EP99111738.3

    申请日：1999-06-17

    申请人： SONY CORPORATION

    发明人： Tamada, Hitoshi ,  Doumuki, Tohru

    IPC分类号： H01S3/085 ,  H01S3/19 ,  H01L33/00

    CPC分类号： H01S5/1082 ,  H01S5/0286 ,  H01S5/3211 ,  H01S5/32341

    摘要： A semiconductor light emitting device easily controlled in reflectance of its cavity edges has formed on the cavity edges of its laser cavity rugged structures including elongated concave portions extending substantially in parallel with bonded surfaces of semiconductor layers forming the laser cavity. The laser cavity is made by sequentially stacking on a substrate an n-type AlGaN cladding layer, n-type GaN optical guide layer, InGaN active layer, p-type GaN optical guide layer and p-type AlGaN cladding layer. The rugged structure is made by first making the cavity edges by etching and then processing the cavity edges by wet etching so that the cavity edges are selectively excavated due to differences in chemical property among semiconductor layers forming the laser cavity caused by differences in composition among them.

    摘要翻译： 一种容易控制其空腔边缘反射的半导体发光器件已经在其激光腔凹凸结构的空腔边缘上形成，凹凸结构包括与形成激光腔的半导体层的接合表面基本平行地延伸的细长凹入部分。 通过在衬底上依次堆叠n型AlGaN覆层，n型GaN光导层，InGaN活性层，p型GaN光导层和p型AlGaN覆层，制成激光腔。 通过首先通过蚀刻制造空腔边缘然后通过湿法蚀刻处理空腔边缘来制造凹凸结构，使得由于形成激光空腔的半导体层之间的化学性质差异导致空腔边缘被选择性地挖掘 。

    A semiconductor laser device
    7.
    发明公开
    A semiconductor laser device 失效
    半导体激光装置

    公开(公告)号：EP0363007A2

    公开(公告)日：1990-04-11

    申请号：EP89308874.0

    申请日：1989-09-01

    申请人： MITSUBISHI DENKI KABUSHIKI KAISHA

    发明人： Ikeda, Kenji c/o Mitsubishi Denki K.K. LSI ,  Shigihara, Kimio c/oMitsubishi Denki K.K. LSI ,  Mihashi, Yutaka c/oMitsubishi Denki K.K. LSI

    IPC分类号： H01S3/085 ,  H01S3/025

    CPC分类号： H01S5/0286 ,  H01S5/1082 ,  H01S2301/166

    摘要： A semiconductor laser device provided with a broad light waveguide path (1) through which a higher order transverse mode can be propagated, includes at least one of laser facets of the light waveguide path (1) comprising a high reflectance region (4) having a width of about 1/5 to 1/2 of the width of the light waveguide path (1) located at a central portion thereof and a low reflectance region having a lower reflectance than the high reflectance region (4) located at both sides of the high reflectance region (4).

    摘要翻译： 一种设置有可以传播较高阶横模的宽光波导路径（1）的半导体激光器装置包括光波导路径（1）的激光刻面中的至少一个包括高反射率区域（4），所述高反射率区域（4）具有 宽度为位于其中央部分的光波导路径（1）的宽度的约1/5至1/2，并且具有比位于其中心部分的两侧的高反射率区域（4）低的反射率的低反射率区域 高反射率区域（4）。

    Surface emitting laser, method for producing surface emitting laser, and image forming apparatus
    8.
    发明公开
    Surface emitting laser, method for producing surface emitting laser, and image forming apparatus 审中-公开

    公开(公告)号：EP2282383A3

    公开(公告)日：2011-09-07

    申请号：EP10007000.2

    申请日：2010-07-07

    申请人： Canon Kabushiki Kaisha

    发明人： Ikuta, Mitsuhiro

    IPC分类号： H01S5/183 ,  G06K7/10

    CPC分类号： H01S5/18311 ,  H01S5/0286 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18347 ,  Y10S257/918

    摘要： A surface emitting laser (100) includes a lower multilayer mirror (120), an active layer (140), and an upper multilayer mirror (160) stacked onto a substrate (110). A first current confinement layer (210) having a first electrically conductive region (212) and a first insulating region (214) formed above or below the active layer using a first trench structure (230). A second current confinement layer (220) having a second electrically conductive region (222) and a second insulating region (224) is formed above or below the first current confinement layer using a second trench structure (240). The two trench structures extend from a top surface of the upper multilayer mirror such that the second trench structure surrounds the first trench structure. When viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.

    Surface emitting laser, method for producing surface emitting laser, and image forming apparatus
    9.
    发明公开
    Surface emitting laser, method for producing surface emitting laser, and image forming apparatus 审中-公开
    表面发射激光器，制造表面发射激光器的方法和图像形成设备

    公开(公告)号：EP2282383A2

    公开(公告)日：2011-02-09

    申请号：EP10007000.2

    申请日：2010-07-07

    申请人： Canon Kabushiki Kaisha

    发明人： Ikuta, Mitsuhiro

    IPC分类号： H01S5/183 ,  G06K7/10

    CPC分类号： H01S5/18311 ,  H01S5/0286 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18333 ,  H01S5/18347 ,  Y10S257/918

    摘要： A surface emitting laser (100) includes a lower multilayer mirror (120), an active layer (140), and an upper multilayer mirror (160) stacked onto a substrate (110). A first current confinement layer (210) having a first electrically conductive region (212) and a first insulating region (214) formed above or below the active layer using a first trench structure (230). A second current confinement layer (220) having a second electrically conductive region (222) and a second insulating region (224) is formed above or below the first current confinement layer using a second trench structure (240). The two trench structures extend from a top surface of the upper multilayer mirror such that the second trench structure surrounds the first trench structure. When viewed in an in-plane direction of the substrate, a boundary between the first electrically conductive region and the first insulating region is disposed inside the second electrically conductive region.

    摘要翻译： 表面发射激光器（100）包括堆叠在衬底（110）上的下多层反射镜（120），有源层（140）和上多层反射镜（160）。 第一电流限制层（210）具有使用第一沟槽结构（230）形成在有源层之上或之下的第一导电区域（212）和第一绝缘区域（214）。 使用第二沟槽结构（240）在第一电流限制层的上方或下方形成具有第二导电区域（222）和第二绝缘区域（224）的第二电流限制层（220）。 两个沟槽结构从上部多层反射镜的顶部表面延伸，使得第二沟槽结构围绕第一沟槽结构。 当在基板的面内方向上观察时，第一导电区域和第一绝缘区域之间的边界设置在第二导电区域内。