公开(公告)号：EP2797185B1

公开(公告)日：2018-09-05

申请号：EP14176634.5

申请日：2006-06-20

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： Behfar, Alex A. ,  Schremer, Alfred, T. ,  Stagarescu, Cristian, B. ,  Vainateya, Nln

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/18 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343

CPC分类号： H01S5/0201 ,  B82Y20/00 ,  H01S5/0042 ,  H01S5/0203 ,  H01S5/0262 ,  H01S5/0264 ,  H01S5/028 ,  H01S5/1039 ,  H01S5/18 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333

摘要： A method for fabricating a nitride-based semiconductor laser, comprising: forming a mask on a p-doped cap layer of a nitride-based semiconductor laser structure; said mask maintaining the conductivity of said cap layer; and using ion beam in excess of 500 V in CAIBE to form an etched facet in said laser structure.

公开(公告)号：EP3343709A1

公开(公告)日：2018-07-04

申请号：EP17210779.9

申请日：2017-12-28

申请人： HUAWEI TECHNOLOGIES CO., LTD.

发明人： CHEN, Kaisheng ,  CHEN, Hongmin

IPC分类号： H01S5/02 ,  H01S5/022 ,  H01S5/0683 ,  H01S5/00 ,  H01S5/06 ,  H01S5/026 ,  H01S5/10

CPC分类号： H01S5/0264 ,  G02B6/12004 ,  G02B6/125 ,  G02B6/4286 ,  G02B6/4295 ,  G02B2006/12097 ,  G02B2006/12121 ,  G02B2006/12123 ,  H01S5/0042 ,  H01S5/021 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/0617 ,  H01S5/0683 ,  H01S5/1032

摘要： Embodiments of the present invention disclose a surface-mount laser apparatus, so as to reduce light path complexity and costs of a device. The apparatus in the embodiments of the present invention includes an on-chip laser, a passive waveguide, and a waveguide detector. The waveguide detector includes a first ridge waveguide, the on-chip laser includes a second ridge waveguide, the on-chip laser is connected to the passive waveguide by means of coupling by using the second ridge waveguide, and the waveguide detector is connected to the passive waveguide by means of coupling by using the first ridge waveguide.

公开(公告)号：EP3020105A1

公开(公告)日：2016-05-18

申请号：EP14750807.1

申请日：2014-07-07

申请人： Canon Kabushiki Kaisha

发明人： INAO, Yasuhisa

IPC分类号： H01S5/026 ,  G01B9/02 ,  H01S5/183 ,  H01S5/00 ,  H01S5/065 ,  H01S5/02

CPC分类号： H01S5/0607 ,  G01B9/02091 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/0078 ,  H01S5/0207 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0656 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18363 ,  H01S5/18366

摘要： A surface emitting laser is provided which requires a smaller number of components, and which can reduce the cost. A surface emitting laser includes a cavity constituted by a first reflecting mirror (101) and a second reflecting mirror (102), and having a resonant wavelength that is changed by changing a cavity length with movement (106) of the first reflecting mirror (101) in a direction facing the second reflecting mirror. The surface emitting laser further includes an active layer (105) arranged in the cavity and emitting light, a third reflecting mirror (103) arranged on the opposite side of the active layer (105) with respect to the second reflecting mirror (102), and a light receiving element (104) arranged to receive light passing through the third reflecting mirror. The wavelength sweeping VCSEL may comprise a first DBR (101) on a deformable support (303) which is in turn supported by a further support (302). The active layer (105) may be a MQW on a second DBR (102) on a substrate (107) having a hole for back-side emission for the radiation to be detected by a photodiode (104). The detected radiation is frequency filtered by a Fabry-Perot resulting from the second DBR (102) and a low reflectivity third reflector (103) realized by the interface between the uncoated lower surface of a quartz substrate (103) and air. Anti-reflective coatings (301,306) on the other outer surfaces prevent undesired further Fabry-Perot resonators. Choosing the FSR of this Fabry-Perot correspondingly, a clock signal for OCT applications can be derived from the Fabry-Perot filtered and detected back-side emission of the VCSEL.

公开(公告)号：EP2543149A1

公开(公告)日：2013-01-09

申请号：EP11750110.6

申请日：2011-03-01

申请人： Onechip Photonics Inc.

发明人： WATSON, Christopher ,  VITIC, Michael

IPC分类号： H04B10/14 ,  G02B6/12 ,  G02B6/42 ,  H04J14/02

CPC分类号： H04B10/40 ,  G02B6/12002 ,  G02B6/12007 ,  G02B6/42 ,  H01S5/026 ,  H01S5/0264 ,  H04B10/85

摘要： The invention relates to a method of improving the performance of optical receivers within optical transceivers by compensating for crosstalk, both optical and electrical. Optical crosstalk may arise within the optical receiver from a variety of sources including directly from the optical emitter within, indirectly from the optical emitter via losses, and losses of other received wavelengths within the optical transceiver coupled to the optical receiver. Electrical crosstalk may arise for example between the electrical transmission lines of the optical transmitter and optical receiver. The method comprises providing a secondary optical receiver in predetermined location to the primary optical receiver, the optical receivers being electrically coupled such that the crosstalk induced photocurrent in the secondary optical receiver is subtracted from the photocurrent within the primary optical receiver. The method may be applicable to either monolithic and hybrid optical transceivers.

公开(公告)号：EP1979999B1

公开(公告)日：2012-05-23

申请号：EP06849249.5

申请日：2006-12-26

申请人： Binoptics Corporation

发明人： BEHFAR, Alex A. ,  GREEN, Malcolm R. ,  SCHREMER, Alfred T.

IPC分类号： H01S5/026 ,  H01S5/18 ,  G02B6/42 ,  H01L31/153 ,  H01L31/18

CPC分类号： H01S5/0262 ,  G02B6/4214 ,  G02B6/4246 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/107 ,  H01L31/153 ,  H01L31/1844 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0267 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  Y02E10/544

摘要： A laser and detector integrated on corresponding epitaxial layers of a single chip cooperate with on-chip and/or external optics to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels. A monitoring photodetector is fabricated in the detector epitaxy adjacent one end of the laser.

公开(公告)号：EP1706894B1

公开(公告)日：2012-05-23

申请号：EP05705938.8

申请日：2005-01-19

申请人： Binoptics Corporation

发明人： BEHFAR, Alex, A. ,  GREEN, Malcolm, R. ,  SCHREMER, Alfred, T.

IPC分类号： H01S5/026

CPC分类号： H01S5/0264 ,  H01S5/005 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/0262 ,  H01S5/0683 ,  H01S5/1085 ,  H01S5/18 ,  H01S5/2022 ,  H01S5/4012 ,  H01S5/4056 ,  H01S5/4087

摘要： A laser (22) and detector (24) integrated on corresponding epitaxial layers of a single chip (20) cooperate with on-chip and/or external optics (62) to couple light of a first wavelength emitted by the laser to a single external device such as an optical fiber (60) and to simultaneously couple light of a different wavelength received from the external device to the detector to provide bidirectional photonic operation. Multiple lasers and detectors may be integrated on the chip to provide multiple bidirectional channels.

公开(公告)号：EP1794854B1

公开(公告)日：2010-12-29

申请号：EP05794743.4

申请日：2005-09-21

申请人： OSRAM Opto Semiconductors GmbH

发明人： ALBRECHT, Tony ,  BRICK, Peter ,  PHILIPPENS, Marc ,  STEEGMÜLLER, Ulrich

IPC分类号： H01S5/026 ,  H01S5/183 ,  G01S15/58

CPC分类号： G01S7/4916 ,  G01P3/36 ,  G01P3/366 ,  G01S7/4812 ,  G01S17/50 ,  G06F3/0304 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0425 ,  H01S5/0683 ,  H01S5/1032 ,  H01S5/18311 ,  H01S5/2022

摘要： The invention relates to an optical sensor module (1) in a semiconducting body which comprises a semiconducting laser device (1a) for emitting coherent radiation (3), a detector element (1b) having a radiation-detecting zone (12b), and a waveguide (12c), whereby the detector element (1b) is linked with the semiconducting device (1) via the waveguide (12c). The inventive sensor module is characterized in that the waveguide (12c) is positioned in a direction at an angle to the main direction of radiation of the coherent radiation (3) emitted by the semiconductor laser device (1a). The invention also relates to a method for measuring the relative motion of an object (2) in relation to such an optical sensor module (1).

公开(公告)号：EP1879273A3

公开(公告)日：2009-04-29

申请号：EP07013658.5

申请日：2007-07-12

申请人： Seiko Epson Corporation

发明人： Imai, Yasutaka

IPC分类号： H01S5/183 ,  H01S5/026

CPC分类号： H01S5/0264 ,  H01L31/105 ,  H01S5/0014 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/06825 ,  H01S5/18311 ,  H01S2301/176

摘要： A method of manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror (102) above a substrate (101), forming an active layer (103) above the first mirror (102), forming a second mirror (104) above the active layer (103), forming a semiconductor layer (122) on the second mirror (104), and forming a sacrificial layer on the semiconductor layer (122); conducting a first examination step of conducting a reflectance examination on the first multilayer film; forming a second multilayer film by removing the sacrificial layer from the first multilayer film; conducting a second examination step of conducting a reflectance examination on the second multilayer film; and patterning the second multilayer film to form a surface-emitting laser section (140) having the first mirror (102), the active layer (103) and the second mirror (104), and a diode section (120) having the semiconductor layer (122), wherein the sacrificial layer is formed to have an optical film thickness of an odd multiple of λ / 4, where λ is a design wavelength of light emitted by the surface-emitting laser section (140).

公开(公告)号：EP1842267A4

公开(公告)日：2008-07-16

申请号：EP05855676

申请日：2005-12-27

申请人： FINISAR CORP

发明人： GUENTER JAMES ,  BIARD JAMES R

IPC分类号： H01S5/026 ,  H01S5/183

CPC分类号： H01S5/0425 ,  H01L27/15 ,  H01S5/0264 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18358

摘要： Optoelectronic device including integrated light emitting device and photodiode. The optoelectronic device includes a light emitting device such as a verticle cavity surface emitting laser (VCSEL) or resonant cavity light emitting diode (RCLED). A photodiode is also included in the optoelectronic device. Between the light emitting device and the photodiode is a transition region. At least part of the transition region is shorted. A metal contact provides a contact to both the light emitting device and the photodiode.

公开(公告)号：EP1766738A4

公开(公告)日：2008-07-09

申请号：EP05785386

申请日：2005-06-27

申请人： FINISAR CORP

发明人： GUENTER JAMES

IPC分类号： H01S3/04 ,  H01S5/00 ,  H01S5/026 ,  H01S5/183

CPC分类号： H01S5/18308 ,  H01S5/0264 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/3095 ,  H01S2301/02

摘要： A monolithically formed laser and photodiode. The monolithically formed laser and photodiode includes a Vertical Cavity Surface Emitting Laser (VCSEL) that includes a first PN junction. The first PN junction includes a first p layer and a first n layer. A tunnel diode is connected to the VCSEL both physically and electronically through a wafer fabrication process. A photodiode is connected to the tunnel diode. The photodiode is connected to the tunnel diode by physical and electronic connections. The tunnel diode and photodiode may share some common layers. The tunnel diode includes a second PN junction. The monolithically formed laser and photodiode allow for an integrated structure with diode biasing flexibility including the use of a single supply to bias both the laser and photodiodes.