公开(公告)号：EP3944321A1

公开(公告)日：2022-01-26

申请号：EP21186919.3

申请日：2021-07-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： LIN, Meng-Han ,  CHIA, Han-Jong ,  LIU, Yi-Ching ,  HUANG, Chia-En ,  WANG, Sheng-Chen ,  YANG, Feng-Cheng ,  LIN, Chung-Te

IPC分类号： H01L27/11587 ,  H01L27/11595 ,  H01L27/11597

摘要： A memory device, a semiconductor device and manufacturing methods for forming the memory device and the semiconductor device are provided. The memory device include a stacking structure, a switching layer, channel layers and pairs of conductive pillars. The stacking structure includes alternately stacked isolation layers and word lines, and extends along a first direction. The stacking structure has a staircase portion and a connection portion at an edge region of the stacking structure. The connection portion extends along the staircase portion and located aside the staircase portion, and may not be shaped into a staircase structure. The switching layer covers a sidewall of the stacking structure. The channel layers cover a sidewall of the switching layer, and are laterally spaced apart from one another along the first direction. The pairs of conductive pillars stand on the substrate, and in lateral contact with the switching layer through the channel layers.