公开(公告)号：EP3278369A1

公开(公告)日：2018-02-07

申请号：EP16771537.4

申请日：2016-03-31

Applicant: Technion Research & Development Foundation Ltd. ,  Eichen, Yoav

Inventor： EICHEN, Yoav ,  TESSLER, Nir ,  KUMAR, Pramod ,  GERCHIKOV, Yulia

IPC: H01L29/786 ,  H01L21/335

CPC classification number: H01L29/04 ,  H01L29/4925 ,  H01L29/78672 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0053 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0558 ,  H01L2251/5369

Abstract: A transistor device is described, the transistor comprising: a channel region in contact with the gate insulator and source and drain electrodes in contact with the channel region and arranged in a spaced-apart relationship. The channel region is configured with discontinuity in a material path of the channel, located between the source and drain electrodes. The channel being formed by a plurality of discrete semiconductor particles, distributed irregularly within the channel region, and a plurality of electrically conducting particles. The electrically conducting particles connect at least some of said semiconducting particles to one another to provide continuous path for electric coupling between said at least some semiconductor particles, forming an electrical path between the source and drain electrodes.