公开(公告)号：EP3132468A1

公开(公告)日：2017-02-22

申请号：EP15780680.3

申请日：2015-04-13

申请人： Texas Instruments Incorporated

发明人： CAROTHERS, Daniel Nelson ,  DEBORD, Jeffrey R.

IPC分类号： H01L21/762

CPC分类号： H01L29/0653 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02645 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/31055 ,  H01L21/76224 ,  H01L21/76248 ,  H01L21/76278 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/0649 ,  H01L29/7851

摘要： An integrated circuit may be formed by forming a buried isolation layer in an isolation recess in a single-crystal silicon-based substrate. Exposed lateral surfaces of the substrate at the buried isolation layer are covered with a dielectric sidewall. A seed trench is formed through the buried isolation layer to expose the substrate. A single-crystal silicon-based seed layer is formed through the seed trench, extending above the top surface of the buried isolation layer. A silicon-based non-crystalline layer is formed contacting the seed layer. A cap layer is formed over the non-crystalline layer. A radiant-induced recrystallization process converts the non-crystalline layer to a single-crystal layer aligned with the seed layer. The cap layer is removed and the single-crystal layer is planarized, leaving an isolated semiconductor layer over the buried isolation layer.

摘要翻译： 可以通过在单晶硅基衬底的隔离凹槽中形成掩埋隔离层来形成集成电路。 掩埋隔离层处的衬底的暴露的侧表面被电介质侧壁覆盖。 通过掩埋隔离层形成晶种沟以暴露衬底。 通过晶种沟槽形成单晶硅基种子层，在掩埋隔离层的顶表面上方延伸。 形成接触种子层的硅基非晶层。 在非晶层上形成覆盖层。 辐射诱导的再结晶过程将非结晶层转化成与种子层对准的单晶层。 除去盖层并且使单晶层平坦化，在掩埋隔离层上留下隔离的半导体层。