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公开(公告)号:EP0849778A2
公开(公告)日:1998-06-24
申请号:EP97310342.7
申请日:1997-12-19
发明人: Allen, Franklin Louis , Bawa, Mohendra S. , L'Anglois, Kenneth John , Miller, Palmer Arthur , Grimes, Michael H. , Simpson, Vikki Sue , Etheridge, Gary Lee
IPC分类号: H01L21/306
CPC分类号: C09K3/1463 , B24B37/04 , B24B55/03 , B24B57/02 , H01L21/30625
摘要: A method for stabilizing the silicon removal rate during chemical-mechanical wafer polishing, the method comprising the steps of circulating a polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10) and agitating the polishing slurry to adjust both the redox potential and pH of the polishing slurry, to dissolve SiO x aggregates in the polishing slurry and to minimize or eliminate the precipitation of SiO x aggregates in the polishing slurry.
摘要翻译: 一种用于在化学机械晶片抛光期间稳定硅去除速率的方法,所述方法包括以下步骤:将抛光浆料(28)循环在化学机械晶片抛光装置(10)中并搅拌抛光浆料以调节氧化还原电位 和抛光浆料的pH,以将SiO x聚集体溶解在抛光浆料中,并使SiO x聚集体在抛光浆料中的沉淀最小化或消除。
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公开(公告)号:EP0849041A3
公开(公告)日:2000-02-23
申请号:EP97310392.2
申请日:1997-12-19
发明人: Bawa, Mohendra S. , Simpson, Vikki Sue , Grimes, Michael H. , Allen, Franklin Louis , L'Anglois, Kenneth John , Miller, Palmer Arthur , Etheridge, Gary Lee
IPC分类号: B24B37/04 , H01L21/304 , B24B49/14 , B24B55/02 , B24B57/02
CPC分类号: B24B37/015 , B24B55/03 , B24B57/02 , H01L21/31053 , H01L21/3212
摘要: A method for controlling the temperature of a polishing slurry during chemical-mechanical polishing, the method comprising circulating the polishing slurry (28) in a chemical-mechanical polishing apparatus (10), monitoring the temperature of the polishing slurry, exposing the slurry to a temperature control element (36) during the recirculation of the polishing slurry to adjust the temperature of the polishing slurry and maintaining the temperature of the polishing slurry within a predetermined range, thereby maintaining control of the temperature of the polishing slurry.
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公开(公告)号:EP0849040A2
公开(公告)日:1998-06-24
申请号:EP97310334.4
申请日:1997-12-19
发明人: Bawa, Mohendra S. , Simpson, Vikki Sue , Grimes, Michael H. , Allen, Franklin Louis , L'Anglois, Kenneth John , Miller, Palmer Arthur , Etheridge, Gary Lee
IPC分类号: B24B37/04 , H01L21/304 , B24B55/03 , B01D39/16
CPC分类号: H01L21/02024 , B01D39/16 , B24B37/04 , B24B55/03 , B24B57/02
摘要: A method for managing particulate in a chemical-mechanical polishing slurry (28), the method comprising circulating the polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10), passing the polishing slurry through a filtration system (39) and filtering the particulate, including aggregates, precipitates and particles of SiO x created during the polishing process, out of the polishing slurry. The filtration system (39) may comprise a polypropylene filter or a hydrophilic polypropylene filter and the filter may have an internal surface area of approximately 72 square inches which is wetted before passing the polishing slurry therethrough. The filter has a pore size between about 25 and 100 microns and preferably about 50 microns.
摘要翻译: 一种用于管理化学机械抛光浆料(28)中的颗粒的方法,所述方法包括使抛光浆料(28)循环在化学机械晶片抛光装置(10)中,使抛光浆料通过过滤系统(39)和 将抛光过程中产生的颗粒,包括聚集体,沉淀物和SiO x颗粒过滤出抛光浆液。 过滤系统(39)可以包括聚丙烯过滤器或亲水聚丙烯过滤器,并且过滤器可以具有大约72平方英寸的内表面积,其在通过抛光浆料之前被润湿。 过滤器的孔径在约25至100微米之间,优选约50微米。
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公开(公告)号:EP0849040A3
公开(公告)日:2000-03-01
申请号:EP97310334.4
申请日:1997-12-19
发明人: Bawa, Mohendra S. , Simpson, Vikki Sue , Grimes, Michael H. , Allen, Franklin Louis , L'Anglois, Kenneth John , Miller, Palmer Arthur , Etheridge, Gary Lee
IPC分类号: B24B37/04 , H01L21/304 , B24B55/03 , B01D39/16
CPC分类号: H01L21/02024 , B01D39/16 , B24B37/04 , B24B55/03 , B24B57/02
摘要: A method for managing particulate in a chemical-mechanical polishing slurry (28), the method comprising circulating the polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10), passing the polishing slurry through a filtration system (39) and filtering the particulate, including aggregates, precipitates and particles of SiO x created during the polishing process, out of the polishing slurry. The filtration system (39) may comprise a polypropylene filter or a hydrophilic polypropylene filter and the filter may have an internal surface area of approximately 72 square inches which is wetted before passing the polishing slurry therethrough. The filter has a pore size between about 25 and 100 microns and preferably about 50 microns.
摘要翻译: 一种用于管理化学机械抛光浆液(28)中的颗粒的方法,所述方法包括:使抛光浆液(28)在化学机械抛光装置(10)中循环,使抛光浆液通过过滤系统(39),并且 将抛光过程中产生的包括聚集体,沉淀物和SiOx颗粒的颗粒过滤出抛光浆料。 过滤系统(39)可以包括聚丙烯过滤器或亲水聚丙烯过滤器,并且过滤器可以具有大约72平方英寸的内表面积,其在将抛光浆料通过其中之前被润湿。 过滤器具有约25至100微米,优选约50微米的孔径。
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公开(公告)号:EP0849778A3
公开(公告)日:1999-03-31
申请号:EP97310342.7
申请日:1997-12-19
发明人: Allen, Franklin Louis , Bawa, Mohendra S. , L'Anglois, Kenneth John , Miller, Palmer Arthur , Grimes, Michael H. , Simpson, Vikki Sue , Etheridge, Gary Lee
IPC分类号: H01L21/306
CPC分类号: C09K3/1463 , B24B37/04 , B24B55/03 , B24B57/02 , H01L21/30625
摘要: A method for stabilizing the silicon removal rate during chemical-mechanical wafer polishing, the method comprising the steps of circulating a polishing slurry (28) in a chemical-mechanical wafer polishing apparatus (10) and agitating the polishing slurry to adjust both the redox potential and pH of the polishing slurry, to dissolve SiO x aggregates in the polishing slurry and to minimize or eliminate the precipitation of SiO x aggregates in the polishing slurry.
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公开(公告)号:EP0849041A2
公开(公告)日:1998-06-24
申请号:EP97310392.2
申请日:1997-12-19
发明人: Bawa, Mohendra S. , Simpson, Vikki Sue , Grimes, Michael H. , Allen, Franklin Louis , L'Anglois, Kenneth John , Miller, Palmer Arthur , Etheridge, Gary Lee
IPC分类号: B24B37/04 , H01L21/304 , B24B49/14 , B24B55/02
CPC分类号: B24B37/015 , B24B55/03 , B24B57/02 , H01L21/31053 , H01L21/3212
摘要: A method for controlling the temperature of a polishing slurry during chemical-mechanical polishing, the method comprising circulating the polishing slurry (28) in a chemical-mechanical polishing apparatus (10), monitoring the temperature of the polishing slurry, exposing the slurry to a temperature control element (36) during the recirculation of the polishing slurry to adjust the temperature of the polishing slurry and maintaining the temperature of the polishing slurry within a predetermined range, thereby maintaining control of the temperature of the polishing slurry.
摘要翻译: 一种用于在化学机械抛光过程中控制抛光浆料的温度的方法,所述方法包括使抛光浆料(28)在化学机械抛光设备(10)中循环,监控抛光浆料的温度,使浆料暴露于 温度控制元件(36)在研磨浆料的再循环期间调节研磨浆料的温度并且将研磨浆料的温度保持在预定范围内,从而保持对研磨浆料的温度的控制。
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